RF Transistors - Page 224

2360 RF Transistors from 26 Manufacturers meet your specification.
Description:50 dBm (100 W), LDMOS Transistor from 2300 to 2400 MHz
Application Industry:
ISM, RF Energy, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
2.3 to 2.4 GHz
Power:
50 dBm
Package Type:
Surface Mount
Power(W):
100 W
Supply Voltage:
28 V
Package:
SOT502A
more info
Description:GaN from 8.5 to 9.5 GHz
Application Industry:
Radar, Wireless Infrastructure
Technology:
GaN
CW/Pulse:
CW
Frequency:
8.5 to 9.5 GHz
Power:
53.71 to 54.31 dBm
Package Type:
Surface Mount
Power(W):
235 to 270 W
Gain:
7.7 to 8.3 dB
more info
Description:40 W GaN HEMT Transistor from DC to 6 GHz
Application Industry:
Broadcast, Test & Measurement, Wireless Infrastruc...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
DC to 6 GHz
Power:
46.02 dBm
Package Type:
Flanged
Power(W):
39.99 W
Supply Voltage:
28 V (Operating)
more info
Description:57.78 dBm (600 W), LDMOS Transistor from 400 to 900 MHz
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
400 to 900 MHz
Power:
57.78 dBm
Package Type:
Surface Mount
Power(W):
599.79 W
Supply Voltage:
50 V
Package:
SOT539A
more info
Description:GaN on SiC, GaN HEMT from 13.75 to 14.5 GHz
Application Industry:
SATCOM, Communication, Wireless Infrastructure, Br...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
13.75 to 14.5 GHz
Power:
43 to 44 dBm
Package Type:
Flanged
Power(W):
19.95 to 25.12 W
Gain:
7 to 8 dB
Supply Voltage:
24 V
more info
Description:25 W GaN HEMT from DC to 6 GHz
Application Industry:
Wireless Infrastructure, Test & Measurement
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
Frequency:
DC to 6 GHz
Power:
40 to 44.77 dBm
Package Type:
Flanged
Power(W):
20 to 30 W
Supply Voltage:
28 V
more info
Description:2 kW LDMOS Power Transistor from 1.8 to 400 MHz
Application Industry:
Radar, Broadcast, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW, Pulse
Frequency:
1.8 to 400 MHz
Power:
63.01 dBm
Package Type:
Flanged
Power(W):
2 kW
Supply Voltage:
65 V
more info
Description:GaAs FET from 9.5 to 10.5 GHz
Application Industry:
Communication, Wireless Infrastructure
Transistor Type:
FET
Technology:
GaAs
Frequency:
9.5 to 10.5 GHz
Power:
41 to 42 dBm
Package Type:
Flanged
Power(W):
12.59 to 15.85 W
Supply Voltage:
10 V
more info
Description:Si Based Bipolar Transistor
Application Industry:
Aerospace & Defence, ISM
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.025 to 1.15 GHz
Power:
55.44 dBm
Package Type:
Flanged
Power(W):
349.95 W
Gain:
8.5 to 9 dB
Supply Voltage:
50 V
Package:
Flange Ceramic
more info
Description:51.76 dBm (150 W), LDMOS Transistor from 10 to 600 MHz
Application Industry:
Broadcast, ISM, RF Energy, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
10 to 600 MHz
Power:
43.98 to 51.76 dBm
Package Type:
Surface Mount
Power(W):
149.97 W
Supply Voltage:
50 V
Package:
SOT1223-2
more info

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