RF Transistors - Page 221

2360 RF Transistors from 26 Manufacturers meet your specification.
Description:GaN on SiC, GaN HEMT from 2.14 GHz
Application Industry:
Cellular, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
Frequency:
2.14 GHz
Power:
50 dBm
Package Type:
Flanged
Power(W):
100 W
Supply Voltage:
50 V
more info
Description:Si Based TMOS Transistor
Application Industry:
Aerospace & Defence, Radar, ISM, Avionics
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
CW
Frequency:
5 to 80 MHz
Power:
57.78 dBm
Package Type:
Flanged
Power(W):
599.79 W
Gain:
17 dB
Supply Voltage:
50 V
Package:
Flange Ceramic
more info
Description:52.55 dBm (180 W), LDMOS Transistor from 2400 to 2500 MHz
Application Industry:
ISM, RF Energy, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
2.4 to 2.5 GHz
Power:
52.55 dBm
Package Type:
Surface Mount
Power(W):
179.89 W
Supply Voltage:
28 V
Package:
SOT539A
more info
AFT27S010N Image
Description:Airfast RF Power LDMOS Transistor, 728-2700 MHz, 1.26 W Avg., 28 V
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
100 MHz to 3.6 GHz
Power:
31 to 31 dBm
Package Type:
Surface Mount
Power(W):
1.26 W
Supply Voltage:
28 V
Package:
PLD--1.5W PLASTIC
more info
Description:GaN on SiC, GaN HEMT from 2.7 GHz
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
2.7 GHz
Power:
45.5 to 46.5 dBm
Package Type:
Flanged
Power(W):
35.48 to 44.66 W
Gain:
15 to 16 dB
Supply Voltage:
50 V
more info
Description:Si Based TMOS Transistor
Application Industry:
Aerospace & Defence, Radar, Avionics
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
CW
Frequency:
5 to 80 MHz
Power:
57.78 dBm
Package Type:
Flanged
Power(W):
599.79 W
Gain:
21 dB
Supply Voltage:
50 V
Package:
Flange Ceramic
more info
Description:1930 to 1995 MHz LDMOS Transistor for Base Station Applications
Application Industry:
Base Station, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW, Pulse
Frequency:
1930 to 1695 MHz
Power:
57.78 dBm
Package Type:
4-Hole Flanged
Power(W):
600 W
Supply Voltage:
30 V
more info
MRF6V13250H Image
Description:Lateral N-Channel RF Power MOSFET, 1300 MHz, 250 W, 50 V
Application Industry:
Aerospace & Defence
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
960 MHz to 1.5 GHz
Power:
53.98 dBm
Package Type:
Flanged
Power(W):
250.03 W
Supply Voltage:
50 V
Package:
CASE 465--06, STYLE 1 NI--780
more info
Description:GaAs FET from 13.75 to 14.5 GHz
Application Industry:
Communication, Wireless Infrastructure
Transistor Type:
FET
Technology:
GaAs
Frequency:
13.75 to 14.5 GHz
Power:
38.5 to 39 dBm
Package Type:
Flanged
Power(W):
7.08 to 7.94 W
more info
Description:Si Based TMOS Transistor
Application Industry:
Aerospace & Defence, Radar, ISM, Broadcast, Commer...
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
CW
Frequency:
5 to 175 MHz
Power:
49.03 dBm
Package Type:
Flanged
Power(W):
79.98 W
Gain:
11 dB
Supply Voltage:
28 V
Package:
Flange Ceramic
more info

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