RF Transistors - Page 221

2357 RF Transistors from 26 Manufacturers meet your specification.
Description:Gallium Nitride 28V, 18W RF Power Transistor
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on Si, GaN
CW/Pulse:
Pulse, CW
Frequency:
3.3 to 3.8 GHz
Power:
42.55 dBm
Package Type:
Surface Mount
Power(W):
17.99 W
Gain:
11 dB
Supply Voltage:
28 V
Package:
SOIC8NE
more info
Description:10 W GaN Power Transistor from 2.3 to 5 GHz
Application Industry:
Wireless Infrastructure
Technology:
GaN
CW/Pulse:
CW
Frequency:
2300 to 5000 MHz
Power:
40 dBm
Package Type:
Surface Mount
Power(W):
10 W
more info
MRF1K50GN Image
Description:Wideband RF Power LDMOS Transistors, 1.8-500 MHz, 1500 W CW, 50 V
Application Industry:
Wireless Infrastructure, Aerospace & Defence, ISM,...
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
1.8 to 500 MHz
Power:
61.53 dBm
Package Type:
Flanged
Power(W):
1422.33 W
Supply Voltage:
50 V
Package:
OM--1230G--4L PLASTIC
more info
Description:GaAs FET from 5.0 to 5.3 GHz
Application Industry:
Communication, Wireless Infrastructure
Transistor Type:
FET
Technology:
GaAs
Frequency:
5.0 to 5.3 GHz
Power:
43.5 to 44.5 dBm
Package Type:
Flanged
Power(W):
22.39 to 28.18 W
Package:
IK
more info
Description:Si Based DMOS Transistor
Application Industry:
Aerospace & Defence, Radar, ISM, Avionics
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
CW
Frequency:
100 to 500 MHz
Power:
51.76 dBm
Package Type:
Flanged
Power(W):
149.97 W
Gain:
8 dB
Supply Voltage:
28 V
Package:
Flange Ceramic
more info
Description:50.79 dBm (120 W), LDMOS Transistor from 1805 to 1995 MHz
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
1.805 to 1.995 GHz
Power:
50.7 dBm
Package Type:
Surface Mount
Power(W):
117.49 W
Supply Voltage:
28 V
Package:
SOT1275-1
more info
MMRF1022HS Image
Description:Airfast RF Power LDMOS Transistor, 2110-2170 MHz, 63 W Avg., 28 V
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
2.11 to 2.17 GHz
Power:
47.99 dBm
Package Type:
Flanged
Power(W):
62.95 W
Supply Voltage:
28 V
Package:
NI--1230S--4L2L
more info
Description:GaN on SiC, GaN HEMT from 5.2 to 5.4 GHz
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
5.2 to 5.4 GHz
Power:
551.5 dBm
Package Type:
Flanged
Power(W):
100 to 141.25 W
Gain:
15 to 16.5 dB
Supply Voltage:
24 V
more info
Description:Si Based Bipolar Transistor
Application Industry:
Aerospace & Defence, ISM, Radar
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.2 to 1.4 GHz
Power:
32.3 dBm
Package Type:
Flanged
Power(W):
1.7 W
Gain:
9 dB
Supply Voltage:
28 V
Package:
Flange Ceramic
more info
Description:40 dBm (10 W), LDMOS Transistor from 10 to 2200 MHz
Application Industry:
Broadcast, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
10 MHz to 2.2 GHz
Power:
40 dBm
Package Type:
Surface Mount
Power(W):
10 W
Supply Voltage:
28 V
Package:
SOT538A
more info

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