RF Transistors - Page 233

2360 RF Transistors from 26 Manufacturers meet your specification.
Description:40 dBm (10 W), LDMOS Transistor from 2300 to 2700 MHz
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
2.3 to 2.7 GHz
Power:
40 dBm
Package Type:
Surface Mount
Power(W):
10 W
Supply Voltage:
28 V
Package:
SOT975C
more info
Description:45 Watt RF Power GaN HEMT from DC to 4 GHz
Application Industry:
Wireless Infrastructure, Test & Measurement
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
Frequency:
DC to 4 GHz
Power:
46.02 to 47.4 dBm
Package Type:
Flanged
Power(W):
40 to 55 W
Supply Voltage:
28 V
more info
Description:10 MHz to 1 GHz, Power LDMOS transistor
Application Industry:
ISM, RF Energy, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
10 MHz to 1 GHz
Power:
50.79 to 52.04 dBm
Package Type:
Surface Mount
Power(W):
159.96 W
Supply Voltage:
50 V
Package:
SOT1224-2
more info
Description:Si Based Bipolar Transistor
Application Industry:
Aerospace & Defence, ISM, Wireless Infrastructure
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
CW
Frequency:
2 to 30 MHz
Power:
51.76 dBm
Package Type:
Flanged
Power(W):
149.97 W
Gain:
13 dB
Supply Voltage:
50 V
Package:
Flange Ceramic
more info
BLA9G1011LS-300G Image
Description:300 W LDMOS power transistor for avionics applications at frequencies from 1030 MHz to 1090 MHz
Application Industry:
Aerospace & Defence, RF Energy, Avionics, Wireless...
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.03 to 1.09 GHz
Power:
55.01 dBm
Package Type:
Surface Mount
Power(W):
316.96 W
Supply Voltage:
32 V
Package:
SOT502E
more info
Description:Si Based Bipolar Transistor
Application Industry:
Aerospace & Defence, ISM, Avionics
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
960 MHz to 1.215 GHz
Power:
46.99 dBm
Package Type:
Flanged
Power(W):
50 W
Gain:
9.1 dB
Supply Voltage:
65 V
Package:
Flange Ceramic
more info
Description:51.14 dBm (130 W), LDMOS Transistor from 500 to 1400 MHz
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
500 MHz to 1.4 GHz
Power:
51.14 dBm
Package Type:
Surface Mount
Power(W):
130.02 W
Supply Voltage:
50 V
Package:
SOT1135B
more info
Description:48 V GaN HEMT Transistor that operates from DC to 3.5 GHz with 50 W Saturated Power
Application Industry:
ISM, Wireless Infrastructure, Aerospace & Defence,...
Transistor Type:
HEMT
Technology:
GaN on Si, GaN
CW/Pulse:
Pulse, CW
Frequency:
DC to 3.5 GHz
Power:
46.99 dBm
Package Type:
Flanged
Power(W):
50 W
Gain:
17 dB
Supply Voltage:
48 V
Package:
Flange Ceramic
more info
Description:53.01 dBm (200 W), LDMOS Transistor from 10 to 860 MHz
Application Industry:
Broadcast, ISM, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
10 to 860 MHz
Power:
53.01 dBm
Package Type:
Surface Mount
Power(W):
199.99 W
Supply Voltage:
50 V
Package:
SOT502A
more info
Description:400 W Thermally-Enhanced LDMOS Transistor from 2620 to 2690 MHz
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
2.62 to 2.69 GHz
Power:
0 to 56.02 dBm (P3dB)
Package Type:
Surface Mount
Power(W):
0 to 400 Watt (P3dB)
Gain:
12.5 to 13.5 dB
Supply Voltage:
32 V
more info

Filters

Application Industry

Transistor Type

Technology

CW/Pulse

Frequency

 
 
Apply

Power (dBm)

Apply

Power(W)

Apply

Gain (dB)

Apply

Supply Voltage (V)

Apply

Package Type