RF Transistors - Page 228

2357 RF Transistors from 26 Manufacturers meet your specification.
Description:GaAs FET from 3.4 to 3.9 GHz
Application Industry:
Communication, Wireless Infrastructure
Transistor Type:
FET
Technology:
GaAs
Frequency:
3.4 to 3.9 GHz
Power:
38.5 to 39.5 dBm
Package Type:
Flanged
Power(W):
7.08 to 8.91 W
Package:
IB
more info
Description:15 W GaN on Si Transistor from DC to 2.7 GHz
Application Industry:
Radar, RF Energy, Avionics, Test & Measurement, Ae...
Transistor Type:
HEMT
Technology:
GaN on Si, GaN
CW/Pulse:
CW, Pulse
Frequency:
DC to 2.7 GHz
Power:
41.8 to 44.3 dBm
Package Type:
Surface Mount
Power(W):
15.13 to 26.91 W
Supply Voltage:
50 V
Package:
DFN
more info
Description:1.2 kW LDMOS Power Transistor from 960 to 1215 MHz for Avionics Application
Application Industry:
Avionics, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
960 to 1215 MHz
Power:
60.79 dBm
Package Type:
Flanged
Power(W):
1.2 kW
Supply Voltage:
50 V
more info
Description:GaN from 9 to 10 GHz
Application Industry:
Radar, Wireless Infrastructure
Technology:
GaN
CW/Pulse:
CW
Frequency:
9 to 10 GHz
Power:
53.71 to 54.31 dBm
Package Type:
Surface Mount
Power(W):
235 to 270 W
Gain:
7.7 to 8.3 dB
more info
Description:Si Based TMOS Transistor
Application Industry:
Aerospace & Defence, Radar, ISM, Broadcast, Commer...
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
CW
Frequency:
5 to 400 MHz
Power:
50 dBm
Package Type:
Flanged
Power(W):
100 W
Gain:
10 dB
Supply Voltage:
28 V
Package:
Flange Ceramic
more info
Description:400 W GaN Asymmetric Doherty Power Transistor from 2.3 to 2.7 GHz
Application Industry:
Wireless Infrastructure
Technology:
GaN
CW/Pulse:
CW
Frequency:
2300 to 2690 MHz
Power:
56.02 dBm
Package Type:
Flanged
Power(W):
400 W
more info
Description:GaN on SiC, GaN HEMT from 9 to 10 GHz
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
9 to 10 GHz
Power:
55.3 dBm
Package Type:
Flanged
Power(W):
339 W
Gain:
9.3 dB
Supply Voltage:
50 V
more info
Description:800 W RF LDMOS Transistor from 730 to 960 MHz
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
730 to 960 MHz
Power:
59.03 dBm (P3dB)
Package Type:
Surface Mount
Power(W):
800 W (P3dB)
Gain:
17.3 to 19 dB
Supply Voltage:
48 V
more info
Description:LDMOS 3-Stage Integrated Doherty MMIC Transistor from 3.7 to 4 GHz
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW, Pulse
Frequency:
3.7 to 4 GHz
Power:
44.7 to 45.2 dBm (P3dB)
Package Type:
Surface Mount
Power(W):
29.51 to 33.11 W
Supply Voltage:
28 V
more info
Description:2.4 to 2.5 GHz, GaN on Si HEMT for RF Energy Application
Application Industry:
RF Energy
Transistor Type:
HEMT
Technology:
GaN on Si, GaN
CW/Pulse:
CW
Frequency:
2.4 to 2.5 GHz
Power:
54.77 dBm
Package Type:
Surface Mount
Power(W):
299.92 W
Gain:
16 dB
Supply Voltage:
50 V
Package:
PO-780S-2
more info

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