RF Transistors - Page 234

2357 RF Transistors from 26 Manufacturers meet your specification.
Description:600 Watt LDMOS Transistor for RF Energy Applications
Application Industry:
ISM, RF energy, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
900 to 930 MHz
Power:
57.78 dBm
Package Type:
Flanged
Power(W):
600 W
Gain:
19.8 dB
Supply Voltage:
50 V
more info
Description:200 W GaN HEMT from 4.4 to 5 GHz
Application Industry:
SATCOM, Aerospace & Defence
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
4.4 to 5 GHz
Power:
53 dBm
Package Type:
Flanged
Power(W):
200 W
more info
Description:53.98 dBm (250 W), LDMOS Transistor from 1200 to 1400 MHz
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.2 to 1.4 GHz
Power:
53.97 dBm
Package Type:
Surface Mount
Power(W):
249.46 W
Supply Voltage:
36 V
Package:
SOT502A
more info
Description:240 W LDMOS FET from 1930 to 1995 MHz
Application Industry:
Wireless Infrastructure
Transistor Type:
FET
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
1930 to 1995 MHz
Power:
53.8 dBm
Power(W):
239.88 W
Gain:
13 to 14 dB
Supply Voltage:
28 V
more info
Description:50 dBm (100 W), LDMOS Transistor from 2500 to 2700 MHz
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
2.5 to 2.7 GHz
Power:
50 dBm
Package Type:
Surface Mount
Power(W):
100 W
Supply Voltage:
28 V
Package:
SOT1244C
more info
Description:400 W GaN on SiC HEMT from 960 to 1215 MHz
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
960 to 1215 MHz
Power:
56.02 dBm
Power(W):
399.94 W
Gain:
19 dB
Supply Voltage:
50 V
more info
Description:57.78 dBm (600 W), LDMOS Transistor from 500 to 1000 MHz
Application Industry:
Aerospace & Defence, ISM, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
400 MHz to 1 GHz
Power:
53.98 dBm
Package Type:
Surface Mount
Power(W):
250.03 W
Supply Voltage:
50 V
Package:
SOT539A
more info
Description:Gallium Nitride 28V, 25W RF Power Transistor
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Broa...
Transistor Type:
HEMT
Technology:
GaN on Si, GaN
CW/Pulse:
Pulse, CW
Frequency:
DC to 4 GHz
Power:
40 to 43.97 dBm
Package Type:
Flanged
Power(W):
24.95 W
Gain:
13 dB
Supply Voltage:
28 V
Package:
Flange Ceramic
more info
Description:3-Stage LDMOS Doherty MMIC from 3300 to 3800 MHz
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW, Pulse
Frequency:
3.3 to 3.8 GHz
Power:
48 to 49 dBm (P3dB)
Package Type:
Surface Mount
Power(W):
63 to 79.4 W (P3dB)
Supply Voltage:
28 V
Package:
PQFN
more info
Description:Gallium Nitride 28V, 100W RF Power Transistor
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Broa...
Transistor Type:
HEMT
Technology:
GaN on Si, GaN
CW/Pulse:
Pulse, CW
Frequency:
DC to 2 GHz
Power:
50 dBm
Package Type:
Flanged
Power(W):
100 W
Gain:
20 dB
Supply Voltage:
28 V
Package:
Flange Ceramic
more info

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