RF Transistors - Page 234

2360 RF Transistors from 26 Manufacturers meet your specification.
Description:52.3 dBm (170 W), LDMOS Transistor from 1800 to 1990 MHz
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
1.88 to 1.99 GHz
Power:
52.3 dBm
Package Type:
Surface Mount
Power(W):
169.82 W
Supply Voltage:
32 V
Package:
SOT1120B
more info
Description:Si Based Bipolar Transistor
Application Industry:
Aerospace & Defence, ISM, Radar
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.2 to 1.4 GHz
Power:
43.98 dBm
Package Type:
Flanged
Power(W):
25 W
Gain:
9.5 dB
Supply Voltage:
28 V
Package:
Flange Ceramic
more info
Description:40 Watt LDMOS Transistor from 1805 to 2170 MHz
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
1.805 to 2.17 GHz
Power:
46.02 dBm
Package Type:
Surface Mount
Power(W):
39.99 W
Supply Voltage:
28 V
Package:
SOT1211-2
more info
Description:240 W LDMOS FET from 1930 to 1995 MHz
Application Industry:
Wireless Infrastructure
Transistor Type:
FET
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
1930 to 1995 MHz
Power:
53.8 dBm
Power(W):
239.88 W
Gain:
13 to 14 dB
Supply Voltage:
28 V
more info
Description:200 W LDMOS Power Transistor for S-band Radar Applications
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
2700 to 3100 MHz
Power:
53 dBm
Package Type:
Flanged
Power(W):
200 W
Gain:
14 dB
Supply Voltage:
32 V
more info
Description:400 W GaN on SiC HEMT from 960 to 1215 MHz
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
960 to 1215 MHz
Power:
56.02 dBm
Power(W):
399.94 W
Gain:
19 dB
Supply Voltage:
50 V
more info
Description:53.42 dBm (220 W), LDMOS Transistor from 1800 to 2000 MHz
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
1.8 to 2 GHz
Power:
53.4 dBm
Package Type:
Surface Mount
Power(W):
218.78 W
Supply Voltage:
28 V
Package:
SOT502B
more info
Description:Gallium Nitride 28V, 25W RF Power Transistor
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Broa...
Transistor Type:
HEMT
Technology:
GaN on Si, GaN
CW/Pulse:
Pulse, CW
Frequency:
DC to 4 GHz
Power:
40 to 43.97 dBm
Package Type:
Flanged
Power(W):
24.95 W
Gain:
13 dB
Supply Voltage:
28 V
Package:
Flange Ceramic
more info
Description:600 W GaN Doherty Power Transistor from 700 to 1000 MHz
Application Industry:
Wireless Infrastructure
Technology:
GaN
CW/Pulse:
CW, Pulse
Frequency:
700 to 1000 MHz
Package Type:
Surface Mount
Supply Voltage:
48 to 52 V
more info
Description:Gallium Nitride 28V, 100W RF Power Transistor
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Broa...
Transistor Type:
HEMT
Technology:
GaN on Si, GaN
CW/Pulse:
Pulse, CW
Frequency:
DC to 2 GHz
Power:
50 dBm
Package Type:
Flanged
Power(W):
100 W
Gain:
20 dB
Supply Voltage:
28 V
Package:
Flange Ceramic
more info

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