RF Transistors - Page 230

2359 RF Transistors from 26 Manufacturers meet your specification.
Description:50.79 dBm (120 W), LDMOS Transistor from 1805 to 1995 MHz
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
1.805 to 1.995 GHz
Power:
50.7 dBm
Package Type:
Surface Mount
Power(W):
117.49 W
Supply Voltage:
28 V
Package:
SOT1275-1
more info
Description:240-W, 1800 to 2300-MHz, GaN HEMTfor WCDMA, LTE, WiMAX
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
1.8 to 2.3 GHz
Power:
53.32 dBm
Package Type:
Flanged
Power(W):
214.78 W
Supply Voltage:
50 V
more info
Description:A 350 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band.
Application Industry:
ISM, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
10 to 600 MHz
Power:
52.86 to 56.02 dBm
Package Type:
Surface Mount
Power(W):
399.94 W
Supply Voltage:
50 V
Package:
SOT1121A
more info
Description:15 W, 6.0 GHz, GaN HEMT Die
Application Industry:
Test & Measurement, Wireless Infrastructure, Broad...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
DC to 6 GHz
Power:
41.76 dBm
Package Type:
Die
Power(W):
15 W
Supply Voltage:
28 V
more info
Description:49.03 dBm (80 W), LDMOS Transistor from 1805 to 2170 MHz
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
1.805 to 2.17 GHz
Power:
49.03 dBm
Package Type:
Surface Mount
Power(W):
79.98 W
Supply Voltage:
28 V
Package:
SOT1212-2
more info
Description:Si Based Bipolar Transistor
Application Industry:
Aerospace & Defence, ISM, Radar
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
2.7 to 3.1 GHz
Power:
43.01 dBm
Package Type:
Flanged
Power(W):
20 W
Gain:
8.2 dB
Supply Voltage:
36 V
Package:
Flange Ceramic
more info
Description:1700 W RF LDMOS Transistor from DC to 500 MHz
Application Industry:
Broadcast, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW, Pulse
Frequency:
1 to 500 MHz
Power:
62.3 dBm
Package Type:
Flanged
Power(W):
1700 W
Gain:
26.2 dB
Supply Voltage:
50 V
more info
Description:250 Watts GaN on SiC HEMT from 2490 to 2690 MHz
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
2.49 to 2.69 GHz
Power:
53.98 dBm
Package Type:
Earless Flanged
Power(W):
250 W
Gain:
13.5 to 14 dB
Supply Voltage:
48 V
more info
Description:61.46 dBm (1400 W), LDMOS Transistor from 10 to 500 MHz
Application Industry:
ISM, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
10 to 500 MHz
Power:
61.46 dBm
Package Type:
Surface Mount
Power(W):
1399.59 W
Supply Voltage:
50 V
Package:
SOT539A
more info
Description:Si Based Bipolar Transistor
Application Industry:
Aerospace & Defence, ISM
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
CW
Frequency:
30 to 500 MHz
Power:
50.97 dBm
Package Type:
Flanged
Power(W):
125.03 W
Gain:
10 dB
Supply Voltage:
28 V
Package:
Flange Ceramic
more info

FiltersReset All

Application Industry

Transistor Type

Technology

CW/Pulse

Frequency

 
 
Apply

Power (dBm)

Apply

Power(W)

Apply

Gain (dB)

Apply

Supply Voltage (V)

Apply

Package Type