RF Transistors - Page 230

2360 RF Transistors from 26 Manufacturers meet your specification.
Description:DC to 3.5 GHz, GaN HEMT Transistor
Application Industry:
ISM, Wireless Infrastructure, Radar, Aerospace & D...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
DC to 3.5 GHz
Power:
46.98 dBm
Package Type:
Surface Mount
Power(W):
49.89 W
Supply Voltage:
50 V
Package:
SOT467B
more info
Description:Si Based Bipolar Transistor
Application Industry:
Aerospace & Defence, ISM
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
CW
Frequency:
150 to 400 MHz
Power:
43.01 dBm
Package Type:
Flanged
Power(W):
20 W
Gain:
10 dB
Supply Voltage:
28 V
Package:
Flange Ceramic
more info
Description:1.805 to 1.99 GHz, Power LDMOS transistor
Application Industry:
Wireless Infrastructure, RF Energy
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
1.805 to 1.99 GHz
Power:
56.72 dBm
Package Type:
Surface Mount
Power(W):
469.89 W
Supply Voltage:
28 V
Package:
SOT1258-3
more info
Description:30 Watt, GaN HEMT Die from DC to 8 GHz
Application Industry:
Test & Measurement, Wireless Infrastructure, Aeros...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
DC to 8000 MHz
Power:
44.77 dBm
Package Type:
Die
Power(W):
29.99 W
Supply Voltage:
28 V
more info
Description:44.77 dBm (30 W), LDMOS Transistor from 2400 to 2500 MHz
Application Industry:
ISM, RF Energy, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
2.4 to 2.5 GHz
Power:
44.77 dBm
Package Type:
Surface Mount
Power(W):
29.99 W
Supply Voltage:
32 V
Package:
SOT1135A
more info
Description:615 W Thermally Enhanced LDMOS FET from 730 to 960 MHz
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
GaN on SiC
Frequency:
730 to 960 MHz
Power:
58 dBm (P3dB)
Package Type:
Surface Mount
Power(W):
615 W (P3dB)
Gain:
18.5 to 19 dB
Supply Voltage:
48 V
more info
Description:A 250 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band.
Application Industry:
ISM, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
10 to 600 MHz
Power:
53.71 to 53.98 dBm
Package Type:
Surface Mount
Power(W):
250.03 W
Supply Voltage:
50 V
Package:
SOT1121A
more info
Description:Si Based Bipolar Transistor
Application Industry:
Aerospace & Defence, ISM
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
CW
Frequency:
30 to 200 MHz
Power:
50 dBm
Package Type:
Flanged
Power(W):
100 W
Gain:
9 dB
Supply Voltage:
28 V
Package:
Flange Ceramic
more info
Description:3.4 to 3.6 GHz, LDMOS Transistor
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
3.4 to 3.6 GHz
Power:
40 dBm
Package Type:
Surface Mount
Power(W):
10 W
Supply Voltage:
28 V
Package:
SOT975B
more info
Description:3.1 to 3.5 GHz, GaN on Si HEMT for Aerospace & Defence Application
Application Industry:
Aerospace & Defence
Transistor Type:
HEMT
Technology:
GaN on Si, GaN
CW/Pulse:
CW
Frequency:
3.1 to 3.5 GHz
Power:
51.61 dBm
Package Type:
Surface Mount
Power(W):
144.88 W
Gain:
14 dB
Supply Voltage:
50 V
Package:
AC-360B-2/AC-360S-2
more info

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