RF Transistors - Page 229

2357 RF Transistors from 26 Manufacturers meet your specification.
Description:54.91 dBm (310 W), LDMOS Transistor from 1900 to 2000 MHz
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
1.9 to 2 GHz
Power:
54.92 dBm
Package Type:
Surface Mount
Power(W):
310.46 W
Supply Voltage:
28 V
Package:
SOT1258-3
more info
Description:Si Based Bipolar Transistor
Application Industry:
Aerospace & Defence, ISM, Radar
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
3.1 to 3.4 GHz
Power:
43.01 dBm
Package Type:
Flanged
Power(W):
20 W
Gain:
7.5 dB
Supply Voltage:
36 V
Package:
Flange Ceramic
more info
Description:DC to 3.5 GHz, GaN HEMT Transistor
Application Industry:
ISM, Wireless Infrastructure, Radar, Aerospace & D...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
DC to 3.5 GHz
Power:
46.98 dBm
Package Type:
Surface Mount
Power(W):
49.89 W
Supply Voltage:
50 V
Package:
SOT467B
more info
Description:Si Based DMOS Transistor
Application Industry:
Aerospace & Defence, Radar, ISM, Avionics
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
CW
Frequency:
2 to 175 MHz
Power:
50.79 dBm
Package Type:
Flanged
Power(W):
119.95 W
Gain:
13 dB
Supply Voltage:
28 V
Package:
Flange Ceramic
more info
Description:51.14 dBm (130 W), LDMOS Transistor from 500 to 1400 MHz
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
500 MHz to 1.4 GHz
Power:
56.99 dBm
Package Type:
Surface Mount
Power(W):
500.03 W
Supply Voltage:
50 V
Package:
SOT1135A
more info
Description:460 W GaN Power Amplifier from 1805 to 1880 MHz
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
1805 to 1880 MHz
Power:
52.04 to 56.63 dBm (P3dB)
Package Type:
Flanged
Power(W):
160 to 460 W (P3dB)
Gain:
14 to 15.5 dB
Supply Voltage:
48 V
Package:
H-37248C-4
more info
Description:40.79 dBm (12 W), LDMOS Transistor from 2400 to 2500 MHz
Application Industry:
ISM, RF Energy, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
2.4 to 2.5 GHz
Power:
40.79 dBm
Package Type:
Surface Mount
Power(W):
11.99 W
Supply Voltage:
28 V
Package:
SOT975B
more info
Description:Si Based Bipolar Transistor
Application Industry:
Aerospace & Defence, ISM, Radar
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
3.1 to 3.5 GHz
Power:
36.53 dBm
Package Type:
Flanged
Power(W):
4.5 W
Gain:
7.5 dB
Supply Voltage:
36 V
Package:
Flange Ceramic
more info
Description:1.805 to 2.17 GHz, LDMOS 2-stage integrated Doherty MMIC
Application Industry:
Wireless Infrastructure, RF Energy
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
1.805 to 2.17 GHz
Power:
46.98 dBm
Package Type:
Surface Mount
Power(W):
49.89 W
Supply Voltage:
28 V
Package:
SOT1211-2
more info
Description:Si Based DMOS Transistor
Application Industry:
Aerospace & Defence, Radar, ISM, Avionics
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
CW
Frequency:
30 to 175 MHz
Power:
36.99 dBm
Package Type:
Flanged
Power(W):
5 W
Gain:
11 dB
Supply Voltage:
28 V
Package:
Flange Ceramic
more info

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