RF Transistors - Page 229

2360 RF Transistors from 26 Manufacturers meet your specification.
Description:50 dBm (100 W), LDMOS Transistor from 2500 to 2700 MHz
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
2.5 to 2.7 GHz
Power:
50 dBm
Package Type:
Surface Mount
Power(W):
100 W
Supply Voltage:
28 V
Package:
SOT1244C
more info
Description:130 W GaN HEMT Transistor from DC to 2.5 GHz
Application Industry:
Test & Measurement, Aerospace & Defence, Wireless ...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
Frequency:
DC to 2.5 GHz
Power:
51.14 dBm
Package Type:
Flanged
Power(W):
130 W
Gain:
20 dB
Supply Voltage:
28 V
more info
Description:51.3 dBm (135 W), LDMOS Transistor from 700 to 1000 MHz
Application Industry:
Broadcast, ISM, RF Energy, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
700 MHz to 1 GHz
Power:
51.3 dBm
Package Type:
Surface Mount
Power(W):
134.9 W
Supply Voltage:
28 V
Package:
SOT502B
more info
Description:5.2 to 5.9 GHz GaN MMIC for Radar Power Amplifiers
Application Industry:
Radar, Aerospace & Defence
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
5.2 to 5.9 GHz
Power:
45.68 dBm
Package Type:
Flanged
Power(W):
37 W
Supply Voltage:
28 V
more info
Description:53.98 dBm (250 W), LDMOS Transistor from 1200 to 1400 MHz
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.2 to 1.4 GHz
Power:
53.98 dBm
Package Type:
Surface Mount
Power(W):
250.03 W
Supply Voltage:
50 V
Package:
SOT502B
more info
Description:29 W RF GaN on SiC HEMT from 3.3 to 3.6 GHz
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
3400 to 3600 MHz
Power:
53.01 dBm
Package Type:
Earless Flanged
Power(W):
200 W
Gain:
12.5 to 13.5 dB
Supply Voltage:
50 V
more info
Description:45.44 dBm (35 W), LDMOS Transistor from 1 to 1400 MHz
Application Industry:
Broadcast, ISM, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
1 MHz to 1.4 GHz
Power:
42.43 to 45.44 dBm
Package Type:
Surface Mount
Power(W):
34.99 W
Supply Voltage:
32 V
Package:
SOT467C
more info
Description:48 V GaN HEMT Transistor that operates from DC to 4.0 GHz with 12 W Saturated Power
Application Industry:
ISM, Wireless Infrastructure, Aerospace & Defence,...
Transistor Type:
HEMT
Technology:
GaN on Si, GaN
CW/Pulse:
Pulse, CW
Frequency:
DC to 3.5 GHz
Power:
40.97 dBm
Package Type:
Surface Mount
Power(W):
12.5 W
Gain:
17.5 dB
Supply Voltage:
48 V
Package:
6x3mm PDFN-14LD
more info
Description:40 dBm (10 W), LDMOS Transistor from 10 to 2200 MHz
Application Industry:
Broadcast, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
10 MHz to 2.2 GHz
Power:
40 dBm
Package Type:
Surface Mount
Power(W):
10 W
Supply Voltage:
28 V
Package:
SOT538A
more info
Description:Si Based Bipolar Transistor
Application Industry:
Aerospace & Defence, ISM, Radar
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
2.7 to 2.9 GHz
Power:
39.29 dBm
Package Type:
Flanged
Power(W):
8.49 W
Gain:
8.1 dB
Supply Voltage:
36 V
Package:
Flange Ceramic
more info

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