RF Transistors - Page 226

2360 RF Transistors from 26 Manufacturers meet your specification.
Description:Si Based Bipolar Transistor
Application Industry:
Aerospace & Defence, Wireless Infrastructure, Broa...
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
CW
Frequency:
100 to 400 MHz
Power:
30 dBm
Package Type:
Flanged
Power(W):
1 W
Gain:
15 dB
Supply Voltage:
28 V
Package:
Flange Ceramic
more info
Description:53.98 dBm (250 W), LDMOS Transistor from 1300 to 1300 MHz
Application Industry:
ISM, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
DC to 1.3 GHz
Power:
53.97 dBm
Package Type:
Surface Mount
Power(W):
249.46 W
Supply Voltage:
50 V
Package:
SOT1121A
more info
Description:GaAs FET from 5.9 to 7.2 GHz
Transistor Type:
FET
Technology:
GaAs
Frequency:
5.9 to 7.2 GHz
Power:
35.5 to 36.5 dBm
Package Type:
Flanged
Power(W):
3.55 to 4.47 W
Package:
IA
more info
Description:490 W GaN HEMT Transistor from 2.11 to 2.17 GHz
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
2.11 to 2.17 GHz
Power:
56.9 dBm
Package Type:
Flanged
Power(W):
490 W
Gain:
13 to 14.4 dB
Supply Voltage:
48 V
more info
Description:46.02 dBm (40 W), LDMOS Transistor from 2500 to 2700 MHz
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
2.5 to 2.7 GHz
Power:
46.02 dBm
Package Type:
Surface Mount
Power(W):
39.99 W
Supply Voltage:
28 V
Package:
SOT1121E
more info
Description:GaN on SiC, GaN HEMT from 13.75 to 14.5 GHz
Application Industry:
SATCOM, Broadcast, Communication, Wireless Infrast...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
13.75 to 14.5 GHz
Power:
44 to 45 dBm
Package Type:
Flanged
Power(W):
25.12 to 31.62 W
Supply Voltage:
24 V
more info
Description:2.4 to 2.5 GHz, GaN on Si HEMT for RF Energy Application
Application Industry:
RF Energy
Transistor Type:
HEMT
Technology:
GaN on Si, GaN
CW/Pulse:
CW
Frequency:
2.4 to 2.5 GHz
Power:
53.01 dBm
Package Type:
Surface Mount
Power(W):
199.99 W
Gain:
17 dB
Supply Voltage:
50 V
Package:
TO-272S-4
more info
Description:900 to 930 MHz, LDMOS Transistor
Application Industry:
ISM, RF Energy, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
900 to 930 MHz
Power:
56.99 dBm
Package Type:
Surface Mount
Power(W):
500.03 W
Supply Voltage:
50 V
Package:
SOT502A
more info
Description:GaAs FET from 5.9 to 6.4 GHz
Application Industry:
Communication, Wireless Infrastructure
Transistor Type:
FET
Technology:
GaAs
Frequency:
5.9 to 6.4 GHz
Power:
35 to 36 dBm
Package Type:
Surface Mount
Power(W):
3.16 to 3.98 W
Supply Voltage:
10 V
Package:
IK
more info
Description:10 MHz to 2.7 GHz, GaN on Si HEMT for RF Energy, Aerospace & Defence Application
Application Industry:
RF Energy, Aerospace & Defence
Transistor Type:
HEMT
Technology:
GaN on Si, GaN
CW/Pulse:
CW
Frequency:
10 MHz to 2.7 GHz
Power:
33.01 dBm
Package Type:
Surface Mount
Power(W):
2 W
Gain:
16 dB
Supply Voltage:
50 V
Package:
PDFN-14
more info

FiltersReset All

Application Industry

Transistor Type

Technology

CW/Pulse

Frequency

 
 
Apply

Power (dBm)

Apply

Power(W)

Apply

Gain (dB)

Apply

Supply Voltage (V)

Apply

Package Type