RF Transistors - Page 231

2357 RF Transistors from 26 Manufacturers meet your specification.
Description:250 Watt LDMOS Transistor for RF Energy Applications
Application Industry:
ISM, RF Energy, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
2.4 to 2.5 GHz
Power:
53.98 dBm
Package Type:
Surface Mount
Power(W):
250.03 W
Supply Voltage:
32 V
Package:
SOT1270-1
more info
Description:896 to 928 MHz, GaN on Si HEMT for RF Energy Application
Application Industry:
RF Energy
Transistor Type:
HEMT
Technology:
GaN on Si, GaN
CW/Pulse:
CW
Frequency:
896 to 928 MHz
Power:
60 dBm
Package Type:
Surface Mount
Power(W):
1000 W
Gain:
19 dB
Supply Voltage:
50 V
Package:
ACu-1280S-2
more info
Description:61 W LDMOS 2-Stage Power MMIC from 600 to 1000 MHz
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW, Pulse
Frequency:
0.6 to 1 GHz
Power:
47.67 dBm
Package Type:
Chip
Power(W):
58.5 W
more info
Description:2.7 to 3.1 GHz, GaN on Si HEMT for Aerospace & Defence Application
Application Industry:
Aerospace & Defence
Transistor Type:
HEMT
Technology:
GaN on Si, GaN
CW/Pulse:
CW
Frequency:
2.7 to 3.1 GHz
Power:
56.02 dBm
Package Type:
Pallet
Power(W):
399.94 W
Gain:
15 dB
Supply Voltage:
50 V
Package:
Pallet
more info
Description:50 dBm (100 W), LDMOS Transistor from 1 to 1400 MHz
Application Industry:
Broadcast, ISM, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
1 MHz to 1.4 GHz
Power:
50 dBm
Package Type:
Surface Mount
Power(W):
100 W
Supply Voltage:
32 V
Package:
SOT540A
more info
Description:48 V GaN HEMT Transistor that operates from DC to 4.0 GHz with 12 W Saturated Power
Application Industry:
ISM, Wireless Infrastructure, Aerospace & Defence,...
Transistor Type:
HEMT
Technology:
GaN on Si, GaN
CW/Pulse:
Pulse, CW
Frequency:
DC to 3.5 GHz
Power:
40.97 dBm
Package Type:
Surface Mount
Power(W):
12.5 W
Gain:
17.5 dB
Supply Voltage:
48 V
Package:
6x3mm PDFN-14LD
more info
Description:50 dBm (100 W), LDMOS Transistor from 2300 to 2400 MHz
Application Industry:
ISM, RF Energy, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
2.3 to 2.4 GHz
Power:
50 dBm
Package Type:
Surface Mount
Power(W):
100 W
Supply Voltage:
28 V
Package:
SOT502B
more info
Description:25 W Surface-Mount LDMOS FET from 500 to 1400 MHz
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW, Pulse
Frequency:
500 to 1400 MHz
Power:
44 dBm
Package Type:
Surface Mount
Power(W):
25 W
Gain:
18.5 to 19.5 dB
Supply Voltage:
0 to 55 V
Package:
PG-SON-16
more info
Description:1.805 to 1.88 GHz, Power LDMOS transistor
Application Industry:
Wireless Infrastructure, RF Energy
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
1.805 to 1.88 GHz
Power:
56.02 dBm
Package Type:
Surface Mount
Power(W):
399.94 W
Supply Voltage:
32 V
Package:
SOT1258-7
more info
Description:DC to 6 GHz, HEMT Transistor
Application Industry:
ISM, Wireless Infrastructure, Aerospace & Defence,...
Transistor Type:
HEMT
Technology:
GaN on Si, GaN
CW/Pulse:
Pulse, CW
Frequency:
DC to 6 GHz
Power:
36.99 dBm
Package Type:
Surface Mount
Power(W):
5 W
Gain:
17 dB
Supply Voltage:
28 V
Package:
SOIC8NE
more info

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