RF Transistors - Page 231

2360 RF Transistors from 26 Manufacturers meet your specification.
Description:1.2 kW LDMOS Power Transistor from 960 to 1215 MHz for Avionics Application
Application Industry:
Avionics, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
960 to 1215 MHz
Power:
60.79 dBm
Package Type:
Flanged
Power(W):
1.2 kW
Supply Voltage:
50 V
more info
Description:GaN HEMT for L, S, C, X, and Ku-Band Amplifier Applications
Application Industry:
Aerospace & Defence, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
DC to 15 GHz
Power:
45.1 dBm
Package Type:
Surface Mount
Power(W):
32.36 W
Supply Voltage:
40 V
more info
Description:A 1400 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 128 MHz band.
Application Industry:
ISM, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
10 to 128 MHz
Power:
61.46 dBm
Package Type:
Surface Mount
Power(W):
1399.59 W
Supply Voltage:
50 V
Package:
SOT539A
more info
Description:Si Based Bipolar Transistor
Application Industry:
Aerospace & Defence, ISM, Radar
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
3.1 to 3.5 GHz
Power:
36.99 dBm
Package Type:
Flanged
Power(W):
5 W
Gain:
8.5 dB
Supply Voltage:
33 V
Package:
Flange Ceramic
more info
Description:800 W LDMOS Power Transistor from 400 to 800 MHz
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
400 to 800 MHz
Power:
58.75 to 59.03 dBm
Package Type:
2-Hole Flanged
Power(W):
750 to 800 W (P1dB)
Supply Voltage:
50 V
Package:
4 Leads Ceramic
more info
Description:2.4 to 2.5 GHz, GaN on Si HEMT for RF Energy Application
Application Industry:
RF Energy
Transistor Type:
HEMT
Technology:
GaN on Si, GaN
CW/Pulse:
CW
Frequency:
2.4 to 2.5 GHz
Power:
54.77 dBm
Package Type:
Surface Mount
Power(W):
299.92 W
Gain:
16 dB
Supply Voltage:
50 V
Package:
ACu-780S-2
more info
Description:Dual-Stage 250 W LDMOS RF Power Module for 2.4 GHz ISM Applications
Application Industry:
ISM, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW, Pulse
Frequency:
2400 to 2500 MHz
Power:
53.98 dBm
Package Type:
Through Hole
Power(W):
250 W
Gain:
31 to 32 dB
Supply Voltage:
32 V
Package:
Pallet
more info
Description:Si Based TMOS Transistor
Application Industry:
Aerospace & Defence, Radar, ISM, Commercial, Avion...
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
CW
Frequency:
5 to 500 MHz
Power:
51.76 to 53.01 dBm
Package Type:
Flanged
Power(W):
199.99 W
Gain:
10 dB
Supply Voltage:
28 V
Package:
Flange Ceramic
more info
Description:50 dBm (100 W), LDMOS Transistor from 1 to 1400 MHz
Application Industry:
Broadcast, ISM, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
1 MHz to 1.4 GHz
Power:
50 dBm
Package Type:
Surface Mount
Power(W):
100 W
Supply Voltage:
32 V
Package:
SOT540A
more info
Description:250-W, 1200 to 1400-MHz, GaN HEMT for L-Band Radar Systems
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
500 MHz to 1.6 GHz
Power:
54.39 to 55.19 dBm
Package Type:
Flanged
Power(W):
330.37 W
Supply Voltage:
50 V
more info

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