RF Transistors - Page 232

2357 RF Transistors from 26 Manufacturers meet your specification.
Description:60 Watt LDMOS Transistor from 10 to 1000 MHz
Application Industry:
ISM, RF Energy, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
10 MHz to 1 GHz
Power:
47.78 dBm
Package Type:
Surface Mount
Power(W):
60 W
Supply Voltage:
50 V
Package:
SOT1223-2
more info
Description:145 W GaN-on SiC-HEMT from 8.4 to 9.6 GHz
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse
Frequency:
7.9 to 9.6 GHz
Power:
50 to 51.61 dBm
Package Type:
4-Hole Flanged
Power(W):
100 to 145 W
Supply Voltage:
48 V
more info
Description:A 300 W LDMOS RF power transistor for broadcast applications and industrial, scientific and medical applications in the HF to 500 MHz band.
Application Industry:
ISM, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
10 to 500 MHz
Power:
54.77 dBm
Package Type:
Surface Mount
Power(W):
299.92 W
Supply Voltage:
50 V
Package:
SOT502B
more info
Description:Si Based DMOS Transistor
Application Industry:
Aerospace & Defence, Radar, ISM, Avionics
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
CW
Frequency:
100 to 500 MHz
Power:
43.01 dBm
Package Type:
Flanged
Power(W):
20 W
Gain:
10 dB
Supply Voltage:
28 V
Package:
Flange Ceramic
more info
Description:200 W Power LDMOS Transistor for ISM Applications
Application Industry:
Broadcast, ISM, RF Energy, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
700 MHz to 1 GHz
Power:
53.01 dBm
Package Type:
Surface Mount
Power(W):
199.99 W
Supply Voltage:
28 V
Package:
SOT502A
more info
Description:50-W, 7.9 to 9.6-GHz, 50-ohm, Input/Output-Matched GaN HEMT
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
7.9 to 9.6 GHz
Power:
46.72 to 48.4 dBm
Package Type:
Flanged
Power(W):
69.18 W
Supply Voltage:
50 V
more info
Description:10 to 600 MHz, Power LDMOS transistor
Application Industry:
Aerospace & Defence, ISM, RF Energy, Wireless Infr...
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
10 to 600 MHz
Power:
58.45 dBm
Package Type:
Surface Mount
Power(W):
699.84 W
Supply Voltage:
50 V
Package:
SOT1204-2
more info
Description:Si Based Bipolar Transistor
Application Industry:
Aerospace & Defence, ISM, Avionics
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.03 GHz
Power:
60 dBm
Package Type:
Flanged
Power(W):
1000 W
Gain:
8 dB
Supply Voltage:
65 V
Package:
Flange Ceramic
more info
Description:49.03 dBm (80 W), LDMOS Transistor from 1805 to 2170 MHz
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
1.805 to 2.17 GHz
Power:
49.03 dBm
Package Type:
Surface Mount
Power(W):
79.98 W
Supply Voltage:
28 V
Package:
SOT1212-2
more info
Description:400 W, 3600 to 3800 MHz GaN MMIC HEMT for Cellular Power Amplifier Applications
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
3.6 to 3.8 GHz
Power:
56.02 dBm
Package Type:
Flanged
Power(W):
400 W
Supply Voltage:
48 V
more info

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