RF Transistors - Page 232

2360 RF Transistors from 26 Manufacturers meet your specification.
Description:100 W GaN-Based Doherty Power Transistor from 2.3 to 2.7 GHz
Application Industry:
Wireless Infrastructure
Technology:
GaN
CW/Pulse:
CW, Pulse
Frequency:
2300 to 2700 MHz
Power:
41.5 dBm
Package Type:
Surface Mount
Power(W):
14.12 W
Supply Voltage:
50 V
more info
Description:10 W, DC - 6 GHz, RF Power GaN HEMT
Application Industry:
Test & Measurement, Wireless Infrastructure, Broad...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
DC to 6 GHz
Power:
40 to 40.97 dBm
Package Type:
Flanged
Power(W):
12.5 W
Supply Voltage:
28 V
more info
Description:53.98 dBm (250 W), LDMOS Transistor from 2400 to 2500 MHz
Application Industry:
ISM, RF Energy, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
2.4 to 2.5 GHz
Power:
53.98 dBm
Package Type:
Surface Mount
Power(W):
250.03 W
Supply Voltage:
28 V
Package:
SOT539B
more info
Description:10 W GaN HEMT from DC to 6 GHz
Application Industry:
Wireless Infrastructure, Test & Measurement
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
DC to 6 GHz
Power:
42.3 dBm
Package Type:
Flanged
Power(W):
17 W
Supply Voltage:
28 V
more info
Description:100 W GaN HEMT from DC to 3.5 GHz
Transistor Type:
HEMT
Technology:
GaN
CW/Pulse:
CW, Pulse
Frequency:
DC to 3.5 GHz
Power:
50 dBm (PL1dB)
Package Type:
Flanged
Power(W):
100 W (PL1dB)
Supply Voltage:
50 V
Package:
Thermally Enhanced
more info
Description:920 to 960 MHz Thermally-Enhanced High Power RF LDMOS FET
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW, Pulse
Frequency:
920 to 960 MHz
Power:
58 dBm
Package Type:
Earless Flanged
Power(W):
630 W
Gain:
19 dB
Supply Voltage:
48 V
more info
BLA9G1011L-300G Image
Description:300 W LDMOS power transistor for avionics applications at frequencies from 1030 MHz to 1090 MHz
Application Industry:
Aerospace & Defence, RF Energy, Avionics, Wireless...
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.03 to 1.09 GHz
Power:
55.01 dBm
Package Type:
Surface Mount
Power(W):
316.96 W
Supply Voltage:
32 V
Package:
SOT502F
more info
Description:Si Based DMOS Transistor
Application Industry:
Aerospace & Defence, Radar, ISM, Avionics
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
CW
Frequency:
2 to 175 MHz
Power:
53.01 dBm
Package Type:
Flanged
Power(W):
199.99 W
Gain:
13 dB
Supply Voltage:
28 V
Package:
Flange Ceramic
more info
Description:1.805 to 1.88 GHz, LDMOS Transistor
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
1.805 to 1.88 GHz
Power:
53.97 dBm
Package Type:
Surface Mount
Power(W):
249.46 W
Supply Voltage:
28 V
Package:
SOT539B
more info
Description:Gallium Nitride 28V, 5W RF Power Transistor
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on Si, GaN
CW/Pulse:
Pulse, CW
Frequency:
DC to 6 GHz
Power:
36.99 dBm
Package Type:
Surface Mount
Power(W):
5 W
Gain:
17 dB
Supply Voltage:
28 V
Package:
SOIC8NE
more info

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