RF Transistors - Page 227

2357 RF Transistors from 26 Manufacturers meet your specification.
Description:LDMOS 1-Stage Integrated Doherty MMIC Transistor from 728 to 821 MHz
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW, Pulse
Frequency:
728 to 821 MHz
Power:
36 to 37 dBm (P3dB)
Package Type:
Surface Mount
Power(W):
3.98 to 5.01 W
Supply Voltage:
28 V
more info
Description:GaAs FET from 8 GHz
Transistor Type:
FET
Technology:
GaAs
Frequency:
8 GHz
Power:
20.5 to 21.5 dBm
Package Type:
Chip
Power(W):
0.11 to 0.14 W
more info
Description:20 MHz to 2.7 GHz, HEMT Transistor
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Test...
Transistor Type:
HEMT
Technology:
GaN on Si, GaN
CW/Pulse:
Pulse, CW
Frequency:
20 MHz to 2.7 GHz
Power:
36.99 dBm
Package Type:
Surface Mount
Power(W):
5 W
Gain:
10.5 to 12 dB
Supply Voltage:
28 V
Package:
4x4mm 24-lead PQFN
more info
Description:53.01 dBm (200 W), LDMOS Transistor from 1030 to 1090 MHz
Application Industry:
Aerospace & Defence, Avionics, Wireless Infrastruc...
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.03 to 1.09 GHz
Power:
53.01 dBm
Package Type:
Surface Mount
Power(W):
199.99 W
Supply Voltage:
28 V
Package:
SOT502D
more info
Description:GaAs FET from 4.4 to 5.0 GHz
Application Industry:
Communication, Wireless Infrastructure
Transistor Type:
FET
Technology:
GaAs
Frequency:
4.4 to 5.0 GHz
Power:
38.5 to 39.5 dBm
Package Type:
Flanged
Power(W):
7.08 to 8.91 W
Package:
IB
more info
Description:Si Based Bipolar Transistor
Application Industry:
Aerospace & Defence, ISM, Radar
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
2.7 to 3.1 GHz
Power:
43.01 dBm
Package Type:
Flanged
Power(W):
20 W
Gain:
8.2 dB
Supply Voltage:
36 V
Package:
Flange Ceramic
more info
Description:35 W LDMOS Power Transistor from 1 to 650 MHz
Application Industry:
Broadcast, Radar, ISM, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW, Pulse
Frequency:
1 to 650 MHz
Power:
45.44 dBm
Package Type:
Flanged
Power(W):
35 W
Supply Voltage:
65 V
more info
Description:GaAs FET from 7.1 to 8.5 GHz
Application Industry:
Communication, Wireless Infrastructure
Transistor Type:
FET
Technology:
GaAs
Frequency:
7.1 to 8.5 GHz
Power:
37 to 38 dBm
Package Type:
Flanged
Power(W):
5.01 to 6.31 W
Package:
IA
more info
Description:Si Based Bipolar Transistor
Application Industry:
Aerospace & Defence, ISM
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
960 MHz to 1.215 GHz
Power:
49.54 dBm
Package Type:
Flanged
Power(W):
89.95 W
Gain:
8.4 dB
Supply Voltage:
50 V
Package:
Flange Ceramic
more info
Description:10 MHz to 1 GHz, Power LDMOS transistor
Application Industry:
ISM, RF Energy, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
10 MHz to 1 GHz
Power:
44.77 dBm
Package Type:
Surface Mount
Power(W):
29.99 W
Supply Voltage:
50 V
Package:
SOT1223-2
more info

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