RF Transistors - Page 227

2360 RF Transistors from 26 Manufacturers meet your specification.
Description:51.46 dBm (140 W), LDMOS Transistor from 2496 to 2690 MHz
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
2.49 to 2.69 GHz
Power:
50.76 to 52.5 dBm
Package Type:
Surface Mount
Power(W):
177.83 W
Supply Voltage:
28 V
Package:
SOT1275-1
more info
Description:GaAs FET from 1.8 GHz
Application Industry:
Wireless Infrastructure
Transistor Type:
FET
Technology:
GaAs
Frequency:
1.8 GHz
Power:
43 to 44.5 dBm
Package Type:
Flanged
Power(W):
19.95 to 28.18 W
Package:
IL
more info
Description:30 W, DC - 6.0 GHz, GaN HEMT
Application Industry:
Aerospace & Defence, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
DC to 6 GHz
Power:
43 to 44 dBm
Package Type:
Surface Mount
Power(W):
25.12 W
Supply Voltage:
50 V
more info
Description:57.78 dBm (600 W), LDMOS Transistor from 10 to 500 MHz
Application Industry:
ISM, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
10 to 500 MHz
Power:
57.78 dBm
Package Type:
Surface Mount
Power(W):
599.79 W
Supply Voltage:
50 V
Package:
SOT1214B
more info
Description:GaAs FET from 6.4 to 7.2 GHz
Application Industry:
Communication, Wireless Infrastructure
Transistor Type:
FET
Technology:
GaAs
Frequency:
6.4 to 7.2 GHz
Power:
42 to 43 dBm
Package Type:
Flanged
Power(W):
15.85 to 19.95 W
Package:
IB
more info
Description:Si Based TMOS Transistor
Application Industry:
Broadcast, Aerospace & Defence, Radar, ISM, Commer...
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
CW
Frequency:
5 to 175 MHz
Power:
51.76 dBm
Package Type:
Flanged
Power(W):
149.97 W
Gain:
8 to 13 dB
Supply Voltage:
28 V
Package:
Flange Ceramic
more info
Description:1.805 to 1.88 GHz, Power LDMOS transistor
Application Industry:
Wireless Infrastructure, RF Energy
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
1.805 to 1.88 GHz
Power:
56.98 dBm
Package Type:
Surface Mount
Power(W):
498.88 W
Supply Voltage:
28 V
Package:
SOT1258-7
more info
Description:GaN on SiC, GaN HEMT from 7.7 to 8.5 GHz
Application Industry:
SATCOM, Communication, Wireless Infrastructure, Br...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
7.7 to 8.5 GHz
Power:
47 to 48 dBm
Package Type:
Flanged
Power(W):
50.12 to 63.1 W
Gain:
9.5 to 11 dB
Supply Voltage:
24 V
more info
Description:10 W, C-band, Unmatched, GaN HEMT
Application Industry:
Aerospace & Defence, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
4.5 to 6 GHz
Power:
40 to 40.97 dBm
Package Type:
Flanged
Power(W):
12.5 W
Supply Voltage:
50 V
more info
Description:53.01 dBm (200 W), LDMOS Transistor from 700 to 1000 MHz
Application Industry:
Broadcast, ISM, RF Energy, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
700 MHz to 1 GHz
Power:
53.01 dBm
Package Type:
Surface Mount
Power(W):
199.99 W
Supply Voltage:
28 V
Package:
SOT502B
more info

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