RF Transistors - Page 24

2359 RF Transistors from 26 Manufacturers meet your specification.
Description:288 W, GaN on SiC OptiGaN HEMT from 3400 to 3600 MHz for 4G LTE & Open RAN Applications
Application Industry:
Cellular, Wireless Infrastructure, Broadcast, Base...
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
3400 to 3600 MHz
Power:
46.99 dBm
Package Type:
Surface Mount, Flanged
Power(W):
50 W
Gain:
10.2 dB
Supply Voltage:
48 V
more info
WG60028S Image
Description:28W GaN power transistor for Infrastructure applications at frequencies from DC to 6000 MHz
Application Industry:
Aerospace & Defence, Wireless Infrastructure, Broa...
Transistor Type:
FET
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
DC to 6 GHz
Power:
44.27 dBm
Package Type:
Surface Mount
Power(W):
26.73 W
Supply Voltage:
40 V
Package:
Flanged
more info
Description:High Power Rev 7 GaAs Power FET
Application Industry:
Wireless Infrastructure
Transistor Type:
MESFET
Technology:
GaAs
CW/Pulse:
CW
Frequency:
DC to 6 GHz
Power:
35 dBm
Package Type:
Flanged
Power(W):
3.16 W
Supply Voltage:
7 V
Package:
Ceramic
more info
Description:30 W, Si LDMOS Power Transistor
Application Industry:
Aerospace & Defence, Broadcast, Wireless Infrastru...
Transistor Type:
LDMOS
Technology:
Si
Frequency:
1 to 1000 MHz
Power:
44 dBm
Package Type:
Flanged
Power(W):
30 W
more info
Description:20 W, GaN HEMT Transistor form DC to 6 GHz
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
DC to 6 GHz
Power:
0.1 dBm
Package Type:
Die
Power(W):
0.001 W
Supply Voltage:
50 V
more info
Description:0.5 to 26GHz Low Noise E-PHEMT in a Wafer Scale Package
Application Industry:
Wireless Infrastructure, SATCOM, Broadcast, Wirele...
Transistor Type:
E-pHEMT
Technology:
GaAs
CW/Pulse:
CW
Frequency:
500 MHz to 26 GHz
Power:
8 dBm
Package Type:
Surface Mount
Power(W):
0.006 W
Supply Voltage:
2 V
Package:
SMT 1.05x0.55
more info
Description:AlGaAs/InGaAs pHEMT Transistor Die from DC to 18 GHz
Application Industry:
Commercial, Military, Space, Wireless Infrastructu...
Transistor Type:
pHEMT
Technology:
AlGaAs/InGaAs
CW/Pulse:
CW
Frequency:
DC to 18 GHz
Power:
28 dBm
Package Type:
Chip
Power(W):
0.63 W
Supply Voltage:
2.5 to 8 V
more info
Description:10 W GaN on SiC HEMT from DC to 8 GHz
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN, GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
DC to 8 GHz
Power:
41.76 dBm
Package Type:
Die
Power(W):
15 W
Gain:
16.5 to 17.8 dB
Supply Voltage:
50 V
more info
Description:RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
CW
Frequency:
DC to 1.4 GHz
Package Type:
Through Hole
Gain:
11.5 to 14.5 dB
Supply Voltage:
25 V
Package:
TO-39
more info
Description:DC to 6 GHz, HEMT Transistor
Application Industry:
Wireless Infrastructure, Radar, Aerospace & Defenc...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
DC to 6 GHz
Power:
44.77 dBm
Package Type:
Flanged
Power(W):
29.99 W
Gain:
14 dB
Supply Voltage:
12 to 40 V
more info
Description:Si Based Bipolar Transistor
Application Industry:
Aerospace & Defence, ISM
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
960 MHz to 1.215 GHz
Power:
23.01 dBm
Package Type:
Flanged
Power(W):
0.2 W
Gain:
10 dB
Supply Voltage:
18 V
Package:
Flange Ceramic
more info

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