RF Transistors - Page 24

2357 RF Transistors from 26 Manufacturers meet your specification.
Description:195 W, GaN on SiC OptiGaN HEMT from 2580 to 2630 MHz for 4G LTE & Open RAN Applications
Application Industry:
Cellular, Wireless Infrastructure, Broadcast, Base...
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
2580 to 2630 MHz
Power:
45.05 dBm
Package Type:
Surface Mount, Flanged
Power(W):
32 W
Gain:
14.4 dB
Supply Voltage:
48 V
more info
Description:4 W, Si VDMOS Power Transistor
Application Industry:
Aerospace & Defence, Broadcast, Wireless Infrastru...
Transistor Type:
VDMOS
Technology:
Si
Frequency:
1 to 1000 MHz
Power:
36 dBm
Package Type:
Flanged
Power(W):
4 W
more info
Description:DC to 40 GHz Low Noise GaN on SiC pHEMT
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
pHEMT
Technology:
GaN on SiC, GaAs, GaN
CW/Pulse:
CW
Frequency:
DC to 40 GHz
Power:
24.47 dBm
Package Type:
Die, Chip
Power(W):
0.28 W
Gain:
8 to 14 dB
Supply Voltage:
3 V
more info
Description:SC-70 (SOT-343) Low Noise 22 dBm OIP3
Application Industry:
Wireless Infrastructure
Transistor Type:
pHEMT
Technology:
GaAs
CW/Pulse:
CW
Frequency:
450 MHz to 10 GHz
Power:
12 dBm
Package Type:
Surface Mount
Power(W):
0.02 W
Supply Voltage:
2 V
Package:
SOT-343
more info
Description:220 Watts, 50 Volts, 200 us, 10% S-Band Radar 2700 - 3100 MHz
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
2.7 to 3.1 GHz
Power:
53.42 to 53.89 dBm
Package Type:
Die
Power(W):
244.91 W
Supply Voltage:
50 V
Package:
55-QP
more info
Description:Space Qualified GaAs FETs at 12 GHz
Application Industry:
Military, Space, Test & Measurement, Wireless Infr...
Transistor Type:
FET
Technology:
GaAs
CW/Pulse:
CW
Frequency:
12 GHz
Power:
20 dBm
Package Type:
Chip
Power(W):
0.1 W
Gain:
8 dB
more info
Description:400 W, GaN on SiC HEMT from DC to 2.9 GHz
Application Industry:
Radar, Test & Measurement, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
DC to 2.9 GHz
Package Type:
Die
Gain:
17.8 dB
Supply Voltage:
50 V
more info
Description:2.62 to 2.69 GHz, HEMT Transistor
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
2.62 to 2.69 GHz
Power:
53.01 dBm
Package Type:
Flanged
Power(W):
199.99 W
Gain:
23 dB
Supply Voltage:
48 V
Package:
Ceramic
more info
Description:Si Based TMOS Transistor
Application Industry:
Aerospace & Defence, Radar, ISM, Avionics
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
CW
Frequency:
5 to 500 MHz
Power:
43.01 dBm
Package Type:
Flanged
Power(W):
20 W
Gain:
13.5 dB
Supply Voltage:
28 V
Package:
Flange Ceramic
more info
Description:52.04 dBm (160 W), LDMOS Transistor from 1805 to 2025 MHz
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
1.805 to 2.025 GHz
Power:
52.04 dBm
Package Type:
Surface Mount
Power(W):
159.96 W
Supply Voltage:
28 V
Package:
SOT1275-1
more info
Description:HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.25µm x 200µm)
Application Industry:
Test & Measurement, Aerospace & Defence, Commercia...
Transistor Type:
pHEMT
Technology:
GaAs
CW/Pulse:
CW
Frequency:
DC to 26 GHz
Power:
24 dBm
Package Type:
Chip
Power(W):
0.25 W
Gain:
12 to 17 dB
Supply Voltage:
8 V
more info

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