RF Transistors - Page 21

2359 RF Transistors from 26 Manufacturers meet your specification.
Description:398 W, GaN on SiC OptiGaN HEMT from 2620 to 2690 MHz for 4G LTE & Open RAN Applications
Application Industry:
Cellular, Wireless Infrastructure, Broadcast, Base...
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
2620 to 2690 MHz
Power:
48.98 dBm
Package Type:
Surface Mount, Flanged
Power(W):
79 W
Gain:
11.9 dB
Supply Voltage:
48 V
more info
Description:50 W LDMOS Dual-Stage Doherty Transistor MMIC from 700 MHz to 1 GHz
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW, Pulse
Frequency:
0.7 to 1 GHz
Power:
47 dBm
Package Type:
Surface Mount
Supply Voltage:
48 V
Package:
34 Pin-LGA
more info
Description:HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.3 µm x 2400 µm)
Application Industry:
Test & Measurement, Aerospace & Defence, Commercia...
Transistor Type:
MESFET
Technology:
GaAs
CW/Pulse:
CW
Frequency:
DC to 26.5 GHz
Power:
30.8 dBm
Package Type:
Chip
Power(W):
1.2 W
Gain:
5.4 to 9.8 dB
Supply Voltage:
6 to 8 V
more info
MHT1002GN Image
Description:350 W RF LDMOS Transistors for Consumer and Commercial Cooking
Application Industry:
ISM, RF Energy, Commercial
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
902 to 928 MHz
Power:
55.44 dBm
Package Type:
Flanged
Power(W):
350 W
Supply Voltage:
48 V
Package:
OM--780G--4L PLASTIC
more info
Description:DC to 12 GHz, HEMT Transistor
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Broa...
Transistor Type:
HEMT
Technology:
InGaAs
CW/Pulse:
CW
Frequency:
DC to 12 GHz
Power:
16 dBm
Package Type:
Flanged
Power(W):
0.04 W
Supply Voltage:
2.5 V
more info
Description:420 to 470 MHz, 300 W Transistor for Pulsed Avionics Applications
Application Industry:
Aerospace & Defence
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
Pulse
Frequency:
420 to 470 MHz
Power:
54.77 dBm
Package Type:
Flanged
Power(W):
300 W
Gain:
21 dB
Supply Voltage:
50 V
more info
Description:385 W, GaN on SiC OptiGaN HEMT from 1805 to 1880 MHz for 4G LTE & Open RAN Applications
Application Industry:
Cellular, Wireless Infrastructure, Broadcast, Base...
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
1805 to 1880 MHz
Power:
47.99 dBm
Package Type:
Surface Mount, Flanged
Power(W):
63 W
Gain:
15.1 dB
Supply Voltage:
48 V
more info
Description:2700 to 3100 MHz, 10.7 dB LDMOS Transistor
Application Industry:
Radar
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
2.7 to 3.1 GHz
Power:
47.78 to 50 dBm
Package Type:
Flanged
Power(W):
100 W
Gain:
10.7 dB
Supply Voltage:
32 V
Package:
Ceramic
more info
Description:GaN on SiC, GaN HEMT from 2.6 GHz
Application Industry:
Cellular, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
Frequency:
2.6 GHz
Power:
50.5 dBm
Package Type:
Flanged
Power(W):
112.2 W
Supply Voltage:
50 V
more info
Description:19 W, GaN HEMT Transistor from 9.2 to 9.6 GHz
Application Industry:
SATCOM, Radar, Broadcast
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
9.2 to 9.6 GHz
Power:
43 dBm
Package Type:
Flanged
Power(W):
19.95 W
Supply Voltage:
28 V
Package:
680B
more info
Description:10 W, LDMOS RF Transistor from 930 MHz to 1.6 GHz
Application Industry:
Avionics, ISM, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW, Pulse
Frequency:
930 MHz to 1.6 GHz
Power:
40 dBm
Package Type:
Flanged
Power(W):
10 W
Supply Voltage:
28 V
more info

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