RF Transistors - Page 21

2357 RF Transistors from 26 Manufacturers meet your specification.
Description:398 W, GaN on SiC OptiGaN HEMT from 1930 to 2000 MHz for 4G LTE & Open RAN Applications
Application Industry:
Cellular, Wireless Infrastructure, Broadcast, Base...
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
1930 to 2000 MHz
Power:
48.98 dBm
Package Type:
Surface Mount, Flanged
Power(W):
79 W
Gain:
14.4 dB
Supply Voltage:
48 V
more info
MRF1535N Image
Description:Lateral N-Channel Broadband RF Power MOSFET, 520 MHz, 35 W, 12.5 V
Application Industry:
Wireless Infrastructure, Broadcast, Commercial
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
520 MHz
Power:
45.44 dBm
Package Type:
Flanged
Power(W):
34.99 W
Supply Voltage:
12.5 V
Package:
CASE 1264A-03, STYLE 1 TO-272-6 PLASTIC
more info
Description:DC to 175 MHz, MOSFET Transistor
Application Industry:
Wireless Infrastructure, Broadcast
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
CW
Frequency:
DC to 175 MHz
Package Type:
Flanged
Gain:
14 dB
Supply Voltage:
12.5 V
more info
Description:1.03 to 1.09 GHz, 500 W Transistor for Pulsed Avionics Applications
Application Industry:
Aerospace & Defence
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.03 to 1.09 GHz
Power:
56.99 dBm
Package Type:
Flanged
Power(W):
500 W
Gain:
16.5 dB
Supply Voltage:
50 V
more info
Description:288 W, GaN on SiC OptiGaN HEMT from 3400 to 3600 MHz for 4G LTE & Open RAN Applications
Application Industry:
Cellular, Wireless Infrastructure, Broadcast, Base...
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
3400 to 3600 MHz
Power:
46.99 dBm
Package Type:
Surface Mount, Flanged
Power(W):
50 W
Gain:
10.2 dB
Supply Voltage:
48 V
more info
Description:2.7 to 3.1 GHz, HEMT Transistor
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
2.7 to 3.1 GHz
Power:
36.99 dBm
Package Type:
Flanged
Power(W):
5 W
Gain:
15 dB
Supply Voltage:
50 V
Package:
Ceramic
more info
Description:GaAs FET from 14.0 to 14.5 GHz
Application Industry:
Communication, Wireless Infrastructure
Transistor Type:
FET
Technology:
GaAs
Frequency:
14.0 to 14.5 GHz
Power:
38.5 to 39 dBm
Package Type:
Flanged
Power(W):
7.08 to 7.94 W
more info
Description:15 to 18.6 W, GaN HEMT Transistor from 7.8 to 8.2 GHz
Application Industry:
SATCOM, Radar, Broadcast
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
7.8 to 8.2 GHz
Power:
42.7 dBm
Package Type:
Flanged
Power(W):
18.62 W
Supply Voltage:
28 V
Package:
680B
more info
Description:285 W, LDMOS RF Transistor from 960 MHz to 1.215 GHz
Application Industry:
Avionics, Radar, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW, Pulse
Frequency:
960 MHz to 1.215 GHz
Power:
53.979 to 54.548 dBm
Power(W):
250 to 285 W
Supply Voltage:
36 V
more info
WG21200S Image
Description:200W GaN power transistor for Infrastructure applications at frequencies from 2110 MHz to 2170 MHz
Application Industry:
Wireless Infrastructure
Transistor Type:
FET
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
2.11 to 2.17 GHz
Power:
53.01 dBm
Package Type:
Flanged
Power(W):
199.99 W
Supply Voltage:
48 V
Package:
Flanged
more info
Description:Ceramic Package GaN AM060WX-BI-R Power HEMT DC-15GHz
Application Industry:
Wireless Infrastructure, Radar, Broadcast
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
DC to 15 GHz
Power:
37.3 to 37.7 dBm (P5dB)
Package Type:
Die
Power(W):
5.37 W
Supply Voltage:
28 V
more info

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