RF Transistors - Page 20

2357 RF Transistors from 26 Manufacturers meet your specification.
Description:398 W GaN Transistor from 1800 to 2200 MHz
Application Industry:
Cellular, Wireless Infrastructure, Broadcast, Base...
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
1800 to 2700 MHz
Power:
48.51 dBm
Package Type:
Surface Mount, Flanged
Power(W):
71 W
Gain:
13 dB
Supply Voltage:
48 V
more info
Description:35 W, Si LDMOS Power Transistor
Application Industry:
Aerospace & Defence, Broadcast, Wireless Infrastru...
Transistor Type:
LDMOS
Technology:
Si
Frequency:
1 to 500 MHz
Power:
45 dBm
Package Type:
Flanged
Power(W):
35 W
more info
Description:14 W GaN Power Transistor from DC to 10 GHz
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
DC to 10 GHz
Power:
41.46 dBm
Package Type:
Die
Power(W):
14 W ( Saturated)
Supply Voltage:
30 V
more info
Description:SC-70 (SOT-363) Low Noise High Freq PHEMT 5 dBm P1dB
Application Industry:
Wireless Infrastructure, Radar
Transistor Type:
pHEMT
Technology:
GaAs
CW/Pulse:
CW
Frequency:
1.5 to 18 GHz
Power:
5 dBm
Package Type:
Surface Mount
Power(W):
0.0031 W
Supply Voltage:
1.5 V
Package:
SOT-363
more info
Description:370 Watts - 50 Volts, 330 ms, 10% Radar 1200 - 1400 MHz
Application Industry:
Radar
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.2 to 1.4 GHz
Power:
55.68 to 56.63 dBm
Package Type:
Flanged
Power(W):
460.26 W
Supply Voltage:
50 V
Package:
55ST-1
more info
Description:Space Qualified GaAs FETs at 12 GHz
Application Industry:
Military, Space, Test & Measurement, Wireless Infr...
Transistor Type:
FET
Technology:
GaAs
CW/Pulse:
CW
Frequency:
12 GHz
Power:
24 dBm
Package Type:
Chip
Power(W):
0.25 W
Gain:
7 dB
more info
GTH2e-2425300P Image
Description:300 W High-Efficiency GaN Amplifier from 2.4 to 2.5 GHz
Application Industry:
ISM, Radar, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
2400 to 2500 MHz
Power:
54.77 dBm
Package Type:
Flanged
Power(W):
300 W
Gain:
17 dB
Supply Voltage:
50 V
more info
Description:15 Watt, 0.03 to 1.2 GHz, GaN RF Input-Matched Transistor
Application Industry:
Wireless Infrastructure, Radar, Test & Measurement...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
30 MHz to 1.2 GHz
Power:
41.76 dBm
Package Type:
Surface Mount
Power(W):
15 W
Gain:
18.4 dB
Supply Voltage:
12 to 55 V
Package:
6 x 5 mm
more info
Description:Gallium Nitride 28V, 5W RF Power Transistor
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on Si, GaN
CW/Pulse:
Pulse, CW
Frequency:
DC to 6 GHz
Power:
36.99 dBm
Package Type:
Surface Mount
Power(W):
5 W
Gain:
17 dB
Supply Voltage:
28 V
Package:
SOIC8NE
more info
Description:LDMOS 2-Stage Integrated Doherty MMIC Transistor from 2.11 to 2.17 GHz
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW, Pulse
Frequency:
2.11 to 2.17 GHz
Power:
38.5 to 39.2 dBm (P3dB)
Package Type:
Surface Mount
Power(W):
7.08 to 8.32 W
Supply Voltage:
28 V
more info
Description:HIGH EFFICIENCY pHEMT POWER FET CHIP (.25µm x 600µm)
Application Industry:
Test & Measurement, Aerospace & Defence, Commercia...
Transistor Type:
pHEMT
Technology:
GaAs
CW/Pulse:
CW
Frequency:
DC to 26 GHz
Power:
28.5 dBm
Package Type:
Chip
Power(W):
0.71 W
Gain:
9 to 12.5 dB
Supply Voltage:
8 V
more info

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