RF Transistors - Page 20

2359 RF Transistors from 26 Manufacturers meet your specification.
Description:174 W GaN Asymmetrical Doherty RF Transistor from 3400 to 3800 MHz
Application Industry:
Cellular, Wireless Infrastructure, Broadcast, Base...
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
3400 to 3800 MHz
Power:
44.15 dBm
Package Type:
Surface Mount, Flanged
Power(W):
26 W
Gain:
14.1 dB
Supply Voltage:
48 V
more info
WG011012150S Image
Description:150 W, GaN on SiC Power Transistor from 1.1 to 1.2 GHz
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
1.1 to 1.2 GHz
Power:
51.76 dBm
Package Type:
Flanged
Power(W):
149.97 W
Supply Voltage:
42 V
more info
Description:High Power Rev 7 GaAs Power FET
Application Industry:
Wireless Infrastructure
Transistor Type:
MESFET
Technology:
GaAs
CW/Pulse:
CW
Frequency:
DC to 6 GHz
Power:
36.5 dBm
Package Type:
Flanged
Power(W):
4.47 W
Supply Voltage:
7 V
Package:
Ceramic
more info
Description:4 W, Si VDMOS Power Transistor
Application Industry:
Aerospace & Defence, Broadcast, Wireless Infrastru...
Transistor Type:
VDMOS
Technology:
Si
Frequency:
1 to 850 MHz
Power:
36 dBm
Package Type:
Flanged
Power(W):
4 W
more info
Description:14 W GaN Power Transistor from DC to 10 GHz
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
DC to 10 GHz
Power:
41.46 dBm
Package Type:
Die
Power(W):
14 W ( Saturated)
Supply Voltage:
30 V
more info
Description:Single Voltage E-pHEMT Low Noise 38 dBm OIP3 in LPCC
Application Industry:
Wireless Infrastructure
Transistor Type:
E-pHEMT
Technology:
GaAs
CW/Pulse:
CW
Frequency:
0.05 to 6 GHz
Power:
24.5 dBm
Package Type:
Chip
Power(W):
0.28 W
Supply Voltage:
4 V
Package:
SMT 2x2
more info
Description:AlGaAs/InGaAs pHEMT for Military & Space Applications Up to 26 GHz
Application Industry:
Commercial, Military, Space, Wireless Infrastructu...
Transistor Type:
pHEMT
Technology:
AlGaAs/InGaAs
CW/Pulse:
CW
Frequency:
DC to 26 GHz
Power:
26.5 dBm
Package Type:
Chip
Power(W):
0.45 W
Supply Voltage:
2.5 to 8 V
more info
Description:30 W GaN on SiC HEMT from DC to 6 GHz
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN, GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
DC to 6 GHz
Power:
46.99 dBm
Package Type:
Die
Power(W):
50 W
Gain:
14.5 to 16.2 dB
Supply Voltage:
50 V
more info
Description:E-Series GaN Transistor Driver
Application Industry:
Aerospace & Defence, Radar, Avionics
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
960 MHz to 1.215 GHz
Power:
46.99 to 47.63 dBm
Package Type:
Die
Power(W):
57.94 W
Supply Voltage:
50 V
Package:
55-QQ
more info
Description:2.7 to 3.5 GHz, HEMT Transistor
Application Industry:
Radar, Aerospace & Defence, Test & Measurement, Wi...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
2.7 to 3.5 GHz
Power:
44.77 dBm
Package Type:
Surface Mount
Power(W):
29.99 W
Gain:
18.4 dB
Supply Voltage:
32 to 55 V
Package:
6 x 5 mm
more info
Description:Si Based DMOS Transistor
Application Industry:
Aerospace & Defence, Radar, ISM, Avionics
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
CW
Frequency:
100 to 500 MHz
Power:
51.76 dBm
Package Type:
Flanged
Power(W):
149.97 W
Gain:
8 dB
Supply Voltage:
28 V
Package:
Flange Ceramic
more info

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