RF Transistors - Page 23

2357 RF Transistors from 26 Manufacturers meet your specification.
Description:310 W, GaN on SiC OptiGaN HEMT from 2620 to 2690 MHz for 4G LTE & Open RAN Applications
Application Industry:
Cellular, Wireless Infrastructure, Broadcast, Base...
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
2620 to 2690 MHz
Power:
47.32 dBm
Package Type:
Surface Mount, Flanged
Power(W):
54 W
Gain:
14.1 dB
Supply Voltage:
48 V
more info
MMRF5017HS Image
Description:125 W RF Power GaN Transistor from 30 to 2200 MHz
Application Industry:
Radar, Aerospace & Defence, Military, Test & Measu...
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
30 to 2200 MHz
Power:
51 dBm CW, 200 W Pulsed
Package Type:
Flanged
Power(W):
125 W CW, 200 W Pulsed
Supply Voltage:
50 V
more info
Description:DC to 12 GHz, HEMT Transistor
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Broa...
Transistor Type:
HEMT
Technology:
InGaAs
CW/Pulse:
CW
Frequency:
DC to 12 GHz
Power:
16 dBm
Package Type:
Flanged
Power(W):
0.04 W
Supply Voltage:
2.5 V
more info
Description:420 to 470 MHz, 175 W Transistor for Pulsed Avionics Applications
Application Industry:
Radar
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
Pulse
Frequency:
420 to 470 MHz
Power:
52.43 dBm
Package Type:
Flanged
Power(W):
175 W
Gain:
25.5 dB
Supply Voltage:
50 V
more info
Description:320 W, GaN on SiC OptiGaN HEMT from 1805 to 1880 MHz for 4G LTE & Open RAN Applications
Application Industry:
Cellular, Wireless Infrastructure, Broadcast, Base...
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
1805 to 1880 MHz
Power:
46.99 dBm
Package Type:
Surface Mount, Flanged
Power(W):
50 W
Gain:
13.9 dB
Supply Voltage:
48 V
more info
Description:960 to 1215 MHz, 8.5 dB Bipolar Transistor
Application Industry:
Aerospace & Defence, Avionics
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
960 MHz to 1.215 GHz
Power:
57.78 to 59.78 dBm
Package Type:
Flanged
Power(W):
950.6 W
Gain:
8.5 dB
Supply Voltage:
50 V
Package:
Ceramic
more info
Description:GaAs FET from 8 GHz
Transistor Type:
FET
Technology:
GaAs
Frequency:
8 GHz
Power:
23.5 to 24.5 dBm
Package Type:
Chip
Power(W):
0.22 to 0.28 W
more info
Description:25 W, GaN HEMT Transistor from DC to 20 GHz
Application Industry:
Radar, SATCOM
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
DC to 20 GHz
Power:
43.98 dBm
Package Type:
Die
Power(W):
25 W
Supply Voltage:
28 V
more info
Description:180 W, LDMOS RF Transistor from 2.3 to 2.5 GHz
Application Industry:
ISM, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW, Pulse
Frequency:
2.3 to 2.5 GHz
Power:
52.553 dBm
Package Type:
Flanged
Power(W):
180 W
Supply Voltage:
32 V
more info
WG60028DD Image
Description:28 W, GaN on SiC Power Transistor from DC to 6 GHz
Application Industry:
Aerospace & Defence, Broadcast, Wireless Infrastru...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
DC to 6 GHz
Power:
44.47 dBm
Package Type:
Surface Mount
Power(W):
27.99 W
Supply Voltage:
50 V
more info
Description:HiFET High Voltage GaAs FET
Application Industry:
Wireless Infrastructure, Avionics
Transistor Type:
FET
Technology:
GaAs
CW/Pulse:
CW
Frequency:
DC to 3 GHz
Power:
36 dBm
Package Type:
Flanged
Power(W):
3.98 W
Supply Voltage:
28 to 32 V
Package:
Ceramic
more info

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