RF Transistors - Page 23

2360 RF Transistors from 26 Manufacturers meet your specification.
Description:310 W, GaN on SiC OptiGaN HEMT from 2620 to 2690 MHz for 4G LTE & Open RAN Applications
Application Industry:
Cellular, Wireless Infrastructure, Broadcast, Base...
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
2620 to 2690 MHz
Power:
47.32 dBm
Package Type:
Surface Mount, Flanged
Power(W):
54 W
Gain:
14.1 dB
Supply Voltage:
48 V
more info
Description:50 W LDMOS Dual-Stage Doherty Transistor MMIC from 700 MHz to 1 GHz
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW, Pulse
Frequency:
0.7 to 1 GHz
Power:
47 dBm
Package Type:
Surface Mount
Supply Voltage:
48 V
Package:
34 Pin-LGA
more info
Description:HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.3 µm x 1200 µm)
Application Industry:
Test & Measurement, Aerospace & Defence, Commercia...
Transistor Type:
MESFET
Technology:
GaAs
CW/Pulse:
CW
Frequency:
DC to 26.5 GHz
Power:
28 dBm
Package Type:
Chip
Power(W):
0.63 W
Gain:
7.2 to 11.2 dB
Supply Voltage:
6 to 8 V
more info
MMRF1004GN Image
Description:GSM/GSM EDGE, SINGLE N-CDMA, 2 x W-CDMA Lateral N-Channel RF Power MOSFET, 1600-2200 MHz, 10 W, 28
Application Industry:
Aerospace & Defence, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.6 to 2.2 GHz
Power:
40 dBm
Package Type:
Flanged
Power(W):
10 W
Supply Voltage:
28 V
Package:
TO--270G--2 PLASTIC
more info
Description:DC to 2.4 GHz, HEMT Transistor
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Broa...
Transistor Type:
HEMT
Technology:
InGaAs
CW/Pulse:
CW
Frequency:
DC to 2.4 GHz
Power:
16.5 dBm
Package Type:
Flanged
Power(W):
0.04 W
Gain:
15 dB
Supply Voltage:
3 V
more info
Description:960 MHz to 1.21 GHz, 450 W Transistor for Pulsed Avionics Applications
Application Industry:
Aerospace & Defence
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
Pulse
Frequency:
960 MHz to 1.21 GHz
Power:
56.53 dBm
Package Type:
Flanged
Power(W):
450 W
Gain:
16 dB
Supply Voltage:
50 V
more info
Description:385 W, GaN on SiC OptiGaN HEMT from 1805 to 1880 MHz for 4G LTE & Open RAN Applications
Application Industry:
Cellular, Wireless Infrastructure, Broadcast, Base...
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
1805 to 1880 MHz
Power:
47.99 dBm
Package Type:
Surface Mount, Flanged
Power(W):
63 W
Gain:
15.1 dB
Supply Voltage:
48 V
more info
Description:1.2 to 1.4 GHz, HEMT Transistor
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
1.2 to 1.4 GHz
Power:
56.99 to 58.45 dBm
Package Type:
Flanged
Power(W):
699.84 W
Gain:
17 dB
Supply Voltage:
50 V
Package:
Ceramic
more info
Description:GaAs FET from 7.1 to 7.9 GHz
Application Industry:
Communication, Wireless Infrastructure
Transistor Type:
FET
Technology:
GaAs
Frequency:
7.1 to 7.9 GHz
Power:
39.5 to 40.5 dBm
Package Type:
Flanged
Power(W):
8.91 to 11.22 W
Package:
IA
more info
Description:25 W, GaN HEMT Transistor from DC to 20 GHz
Application Industry:
Radar, SATCOM
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
DC to 20 GHz
Power:
43.98 dBm
Package Type:
Die
Power(W):
25 W
Supply Voltage:
28 V
more info
SD57030 Image
Description:30 W, LDMOS RF Transistor operating at 945 MHz
Application Industry:
Wireless Infrastructure, Commercial
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
945 MHz
Power:
44.77 dBm
Package Type:
Flanged
Power(W):
30 W
Supply Voltage:
28 V
more info

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