RF Transistors - Page 28

2359 RF Transistors from 26 Manufacturers meet your specification.
Description:398 W GaN Transistor from 1800 to 2200 MHz
Application Industry:
Cellular, Wireless Infrastructure, Broadcast, Base...
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
1800 to 2700 MHz
Power:
48.51 dBm
Package Type:
Surface Mount, Flanged
Power(W):
71 W
Gain:
13 dB
Supply Voltage:
48 V
more info
WG60002SF/P Image
Description:2 W, GaN on SiC Power Transistor from DC to 6 GHz
Application Industry:
Aerospace & Defence, Broadcast, Wireless Infrastru...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
DC to 6 GHz
Power:
33.01 dBm
Package Type:
Flanged
Power(W):
2 W
Supply Voltage:
28 V
more info
Description:High Power Rev 7 GaAs Power FET
Application Industry:
Wireless Infrastructure
Transistor Type:
MESFET
Technology:
GaAs
CW/Pulse:
CW
Frequency:
DC to 6 GHz
Power:
38 dBm
Package Type:
Flanged
Power(W):
6.31 W
Supply Voltage:
7 V
Package:
Ceramic
more info
Description:45 W, Si LDMOS Power Transistor
Application Industry:
Aerospace & Defence, Broadcast, Wireless Infrastru...
Transistor Type:
LDMOS
Technology:
Si
Frequency:
1 to 1000 MHz
Power:
46 dBm
Package Type:
Flanged
Power(W):
45 W
more info
Description:65 W, GaN HEMT Transistor form 2.7 to 3.4 GHz
Application Industry:
Radar, Military, Commercial, Wireless Infrastructu...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
2.7 to 3.4 GHz
Power:
48.13 dBm
Package Type:
Surface Mount
Power(W):
65.01 W
Gain:
16 dB
Supply Voltage:
50 V
more info
Description:Single Voltage E-pHEMT Low Current Low Noise 24.2dBm OIP3 in SC-70
Application Industry:
Wireless Infrastructure
Transistor Type:
E-pHEMT
Technology:
GaAs
CW/Pulse:
CW
Frequency:
450 MHz to 6 GHz
Power:
14.4 dBm
Package Type:
Surface Mount
Power(W):
0.03 W
Supply Voltage:
2.7 V
Package:
SOT-343
more info
Description:Space Qualified GaAs FETs at 12 GHz
Application Industry:
Military, Space, Test & Measurement, Wireless Infr...
Transistor Type:
FET
Technology:
GaAs
CW/Pulse:
CW
Frequency:
12 GHz
Power:
27 dBm
Package Type:
Chip
Power(W):
0.5 W
more info
GTH2e-2425300P Image
Description:300 W High-Efficiency GaN Amplifier from 2.4 to 2.5 GHz
Application Industry:
ISM, Radar, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
2400 to 2500 MHz
Power:
54.77 dBm
Package Type:
Flanged
Power(W):
300 W
Gain:
17 dB
Supply Voltage:
50 V
more info
Description:200 Watts, 50 Volts, Class AB or C Milcom 1.5 - 30 MHz
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Broa...
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
CW
Frequency:
1.5 to 30 MHz
Power:
53.01 dBm
Package Type:
2-Hole Flanged
Power(W):
199.99 W
Supply Voltage:
50 V
Package:
55HX-2
more info
Description:24W, 36V, DC to 3.5 GHz, GaN RF Power Transistor
Application Industry:
Wireless Infrastructure, Radar, Aerospace & Defenc...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
DC to 3.5 GHz
Power:
43.8 dBm
Package Type:
Flanged
Power(W):
23.99 W
Gain:
16 dB
Supply Voltage:
36 V
more info
Description:Si Based TMOS Transistor
Application Industry:
Aerospace & Defence, Radar, ISM, Avionics
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
CW
Frequency:
5 to 500 MHz
Power:
46.02 dBm
Package Type:
Flanged
Power(W):
39.99 W
Gain:
14 to 17 dB
Supply Voltage:
28 V
Package:
Flange Ceramic
more info

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