RF Transistors - Page 28

2357 RF Transistors from 26 Manufacturers meet your specification.
Description:195 W Surface-Mount GaN Power Transistor from 1880 to 2025 MHz
Application Industry:
Cellular, Wireless Infrastructure, Broadcast, Base...
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
1880 to 2025 MHz
Power:
45.05 dBm
Package Type:
Surface Mount, Flanged
Power(W):
32 W
Gain:
16.9 dB
Supply Voltage:
48 V
more info
Description:35 W, Si LDMOS Power Transistor
Application Industry:
Aerospace & Defence, Broadcast, Wireless Infrastru...
Transistor Type:
LDMOS
Technology:
Si
Frequency:
1 to 500 MHz
Power:
45 dBm
Package Type:
Flanged
Power(W):
35 W
more info
CHKA011aSXA Image
Description:150 W GaN Transistor from DC to 1.5 GHz
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
DC to 1.5 GHz
Power:
51.14 dBm
Package Type:
Flanged
Power(W):
130.02 W
Supply Voltage:
50 V
Package:
Ceramic
more info
Description:Single Voltage E-pHEMT Low Noise 36 dBm OIP3 in MiniPak
Application Industry:
Wireless Infrastructure
Transistor Type:
E-pHEMT
Technology:
GaAs
CW/Pulse:
CW
Frequency:
450 MHz to 10 GHz
Power:
21.4 dBm
Package Type:
Surface Mount
Power(W):
0.14 W
Supply Voltage:
3 V
Package:
SMT 1.4x1.2
more info
Description:Class-AB GaN-on-SiC HEMT Transistor
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
2.7 to 3.1 GHz
Power:
50.79 to 51.61 dBm
Package Type:
Die
Power(W):
144.88 W
Supply Voltage:
50 V
Package:
55-QP
more info
Description:AlGaAs/InGaAs pHEMT for Military & Space Applications Up to 28 GHz
Application Industry:
Commercial, Military, Space, Wireless Infrastructu...
Transistor Type:
pHEMT
Technology:
AlGaAs/InGaAs
CW/Pulse:
CW
Frequency:
DC to 28 GHz
Power:
24.5 dBm
Package Type:
Chip
Power(W):
0.28 W
Supply Voltage:
2.5 to 8 V
more info
Description:80 W GaN on SiC HEMT from DC to 3.7 GHz
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN, GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
DC to 3.7 GHz
Power:
50 dBm
Package Type:
Die
Power(W):
100 W
Gain:
14.5 to 15.5 dB
Supply Voltage:
50 V
more info
Description:DC to 14 GHz, HEMT Transistor
Application Industry:
Aerospace & Defence, Wireless Infrastructure, Wire...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
DC to 14 GHz
Power:
47.3 dBm
Package Type:
Die
Power(W):
53.7 W
Gain:
19.8 dB
Supply Voltage:
12 to 40 V
more info
Description:Si Based Bipolar Transistor
Application Industry:
Aerospace & Defence, Wireless Infrastructure, Broa...
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
CW
Frequency:
2 to 30 MHz
Power:
47.78 dBm
Package Type:
Flanged
Power(W):
59.98 W
Gain:
13 dB
Supply Voltage:
12.5 V
Package:
Flange Ceramic
more info
Description:50 dBm (100 W), LDMOS Transistor from 2500 to 2700 MHz
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
2.5 to 2.7 GHz
Power:
50 dBm
Package Type:
Surface Mount
Power(W):
100 W
Supply Voltage:
28 V
Package:
SOT502B
more info
Description:HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.25µm x 200µm)
Application Industry:
Test & Measurement, Aerospace & Defence, Commercia...
Transistor Type:
pHEMT
Technology:
GaAs
CW/Pulse:
CW
Frequency:
DC to 26.5 GHz
Power:
22 dBm
Package Type:
Chip
Power(W):
0.16 W
Gain:
9.5 to 14 dB
Supply Voltage:
8 V
more info

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