RF Transistors - Page 29

2357 RF Transistors from 26 Manufacturers meet your specification.
Description:398 W, GaN on SiC OptiGaN HEMT from 2620 to 2690 MHz for 4G LTE & Open RAN Applications
Application Industry:
Cellular, Wireless Infrastructure, Broadcast, Base...
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
2620 to 2690 MHz
Power:
48.98 dBm
Package Type:
Surface Mount, Flanged
Power(W):
79 W
Gain:
11.9 dB
Supply Voltage:
48 V
more info
MMRF1015GN Image
Description:Lateral N-Channel Broadband RF Power MOSFET, 450-1500 MHz, 10 W, 28 V
Application Industry:
Aerospace & Defence, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
1 MHz to 2 GHz
Power:
40 dBm
Package Type:
Flanged
Power(W):
10 W
Supply Voltage:
28 V
Package:
TO--270G--2 PLASTIC
more info
Description:DC to 520 MHz, MOSFET Transistor
Application Industry:
Wireless Infrastructure, Broadcast
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
CW
Frequency:
DC to 520 MHz
Power:
39.03 to 39.54 dBm
Package Type:
Flanged
Power(W):
8.99 W
Gain:
10 dB
Supply Voltage:
7.2 V
more info
Description:1000 W Si-Enhancement Mode Transistor from 1030 to 1090 MHz
Application Industry:
Aerospace & Defence
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.03 to 1.09 GHz
Power:
60 dBm
Package Type:
Flanged
Power(W):
1000 W
Gain:
15.5 dB
Supply Voltage:
50 V
more info
Description:302 W, GaN on SiC OptiGaN HEMT from 3400 to 3800 MHz for 4G LTE & Open RAN Applications
Application Industry:
Cellular, Wireless Infrastructure, Broadcast, Base...
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
3400 to 3800 MHz
Power:
46.53 dBm
Package Type:
Surface Mount, Flanged
Power(W):
45 W
Gain:
11.4 dB
Supply Voltage:
48 V
more info
Description:1030 MHz, 8.4 dB Bipolar Transistor
Application Industry:
Aerospace & Defence, Avionics
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.03 to 1.09 GHz
Power:
53.98 to 55.95 dBm
Package Type:
Flanged
Power(W):
393.55 W
Gain:
9.4 dB
Supply Voltage:
50 V
Package:
Ceramic
more info
Description:GaAs FET from 14.5 GHz
Transistor Type:
FET
Technology:
GaAs
Frequency:
14.5 GHz
Power:
19.5 to 20.5 dBm
Package Type:
Chip
Power(W):
0.09 to 0.11 W
more info
Description:260 W, GaN HEMT Transistor from DC to 5 GHz
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
DC to 5 GHz
Power:
54.15 dBm
Package Type:
Die
Power(W):
260.02 W
Supply Voltage:
48 V
more info
PD57030-E Image
Description:30 W, LDMOS / MOSFET RF Transistor from 925 to 960 MHz
Application Industry:
Wireless Infrastructure, Commercial
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
925 to 960 MHz
Power:
44.77 dBm
Package Type:
Surface Mount
Power(W):
30 W
Supply Voltage:
28 V
more info
WG40120S Image
Description:120W GaN power transistor for Infrastructure applications at frequencies from DC to 4000 MHz
Application Industry:
Aerospace & Defence, Wireless Infrastructure, Broa...
Transistor Type:
FET
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
DC to 4 GHz
Power:
50.79 dBm
Package Type:
Flanged
Power(W):
119.95 W
Supply Voltage:
28 V
Package:
Flanged
more info
Description:Ceramic Package GaN AM060WX-BI-R Power HEMT DC-6GHz
Application Industry:
Wireless Infrastructure, Radar, Broadcast
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
DC to 6 GHz
Power:
45 to 46 dBm (P5dB)
Package Type:
Flanged
Power(W):
31.62 W
Supply Voltage:
28 V
Package:
Ceramic
more info

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