RF Transistors - Page 29

2359 RF Transistors from 26 Manufacturers meet your specification.
Description:630 W, GaN on SiC OptiGaN HEMT from 758 to 960 MHz for 4G LTE & Open RAN Applications
Application Industry:
Cellular, Wireless Infrastructure, Broadcast, Base...
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
758 to 960 MHz
Power:
50.29 dBm
Package Type:
Surface Mount, Flanged
Power(W):
107 W
Gain:
17 dB
Supply Voltage:
48 V
more info
Description:53.01 dBm (200 W), LDMOS Transistor from 1030 to 1090 MHz
Application Industry:
Aerospace & Defence, Avionics, Wireless Infrastruc...
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.03 to 1.09 GHz
Power:
53.01 dBm
Package Type:
Surface Mount
Power(W):
199.99 W
Supply Voltage:
28 V
Package:
SOT502C
more info
Description:HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.25µm x 800µm)
Application Industry:
Test & Measurement, Aerospace & Defence, Commercia...
Transistor Type:
pHEMT
Technology:
GaAs
CW/Pulse:
CW
Frequency:
DC to 26.5 GHz
Power:
28.5 dBm
Package Type:
Chip
Power(W):
0.71 W
Gain:
7 to 11 dB
Supply Voltage:
8 V
more info
MMRF1304GNR1 Image
Description:Wideband RF Power LDMOS Transistor, 1.8 - 2000 MHz, 25 W, 50 V
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Rada...
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
1.8 MHz to 2 GHz
Power:
43.98 dBm
Package Type:
Flanged
Power(W):
25 W
Supply Voltage:
50 V
Package:
TO--270G--2 PLASTIC
more info
Description:DC to 24.3 GHz, HEMT Transistor
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Broa...
Transistor Type:
HEMT
Technology:
InGaAs
CW/Pulse:
CW
Frequency:
DC to 24.3 GHz
Power:
11.5 dBm
Package Type:
Flanged
Power(W):
0.01 W
Supply Voltage:
1.5 V
more info
Description:1.03 to 1.09 GHz, 180 to 198 W Transistor for Pulsed Avionics Applications
Application Industry:
Aerospace & Defence
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.03 to 1.09 GHz
Power:
52.55 to 52.96 dBm
Package Type:
Flanged
Power(W):
180 to 198 W
Gain:
18.5 dB
Supply Voltage:
50 V
more info
Description:316 W, GaN on SiC OptiGaN HEMT from 1805 to 2200 MHz for 4G LTE & Open RAN Applications
Application Industry:
Cellular, Wireless Infrastructure, Broadcast, Base...
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
1805 to 2200 MHz
Power:
46.43 dBm
Package Type:
Surface Mount, Flanged
Power(W):
44 W
Gain:
15.4 dB
Supply Voltage:
48 V
more info
Description:1200 to 1400 MHz, 13.2 dB LDMOS Transistor
Application Industry:
Radar
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.2 to 1.4 GHz
Power:
40 to 43.98 dBm
Package Type:
Flanged
Power(W):
25 W
Gain:
13.2 dB
Supply Voltage:
30 V
Package:
Ceramic
more info
Description:GaAs FET from 5.3 to 5.9 GHz
Application Industry:
Communication, Wireless Infrastructure
Transistor Type:
FET
Technology:
GaAs
Frequency:
5.3 to 5.9 GHz
Power:
40.5 to 41.5 dBm
Package Type:
Flanged
Power(W):
11.22 to 14.13 W
Package:
IK
more info
Description:107 W, GaN HEMT Transistor from 3.5 to 3.6 GHz
Application Industry:
Wireless Infrastructure, Test & Measurement, Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
3.5 to 3.6 GHz
Power:
50.3 dBm
Package Type:
Flanged
Power(W):
107 W
Supply Voltage:
48 V
Package:
680B
more info
PD55008-E Image
Description:3 W, LDMOS / MOSFET RF Transistor from 480 to 900 MHz
Application Industry:
Broadcast, Commercial, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
480 to 900 MHz
Power:
34.77 dBm
Package Type:
Surface Mount
Power(W):
3 W
Supply Voltage:
12.5 to 15.5 V
more info

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