RF Transistors - Page 26

2357 RF Transistors from 26 Manufacturers meet your specification.
Description:385 W, GaN on SiC OptiGaN HEMT from 1805 to 1880 MHz for 4G LTE & Open RAN Applications
Application Industry:
Cellular, Wireless Infrastructure, Broadcast, Base...
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
1805 to 1880 MHz
Power:
47.99 dBm
Package Type:
Surface Mount, Flanged
Power(W):
63 W
Gain:
15.1 dB
Supply Voltage:
48 V
more info
Description:25 W, Si VDMOS Power Transistor
Application Industry:
Aerospace & Defence, Broadcast, Wireless Infrastru...
Transistor Type:
VDMOS
Technology:
Si
Frequency:
1 to 175 MHz
Power:
43 dBm
Package Type:
Flanged
Power(W):
25 W
more info
Description:20 W Power Transistor from DC to 18 GHz
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
DC to 18 GHz
Power:
42.04 dBm
Package Type:
Die
Power(W):
16 W
Supply Voltage:
30 V
more info
Description:Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package
Application Industry:
Wireless Infrastructure
Transistor Type:
pHEMT
Technology:
GaAs
CW/Pulse:
CW
Frequency:
450 MHz to 10 GHz
Power:
11 dBm
Package Type:
Surface Mount
Power(W):
0.01 W
Supply Voltage:
2 V
Package:
SOT-343
more info
Description:RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
CW
Frequency:
DC to 30 MHz
Power:
53.98 dBm
Package Type:
2-Hole Flanged
Power(W):
250.03 W
Supply Voltage:
50 V
Package:
M177
more info
Description:AlGaAs/InGaAs pHEMT for Military & Space Applications Up to 18 GHz
Application Industry:
Commercial, Military, Space, Wireless Infrastructu...
Transistor Type:
pHEMT
Technology:
AlGaAs/InGaAs
CW/Pulse:
CW
Frequency:
DC to 18 GHz
Power:
30 dBm
Package Type:
Chip
Power(W):
1 W
Supply Voltage:
2.5 to 8 V
more info
Description:30 W GaN on SiC HEMT from DC to 6 GHz
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN, GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
DC to 6 GHz
Power:
46.99 dBm
Package Type:
Die
Power(W):
50 W
Gain:
14.5 to 16.2 dB
Supply Voltage:
50 V
more info
QPD0007 Image
Description:20 W GaN on SiC HEMT from DC to 5 GHz
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
Frequency:
DC to 5 GHz
Power:
43 dBm
Package Type:
Surface Mount
Power(W):
19.95 W
Gain:
19 dB
Supply Voltage:
48 V (Drain)
Package:
DFN
more info
Description:350 W, 5200 - 5900 MHz, 50-Ohm Input/Output Matched, GaN HEMT for C-Band Radar Systems
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
5.2 to 5.9 GHz
Power:
54.8 to 56.98 dBm
Package Type:
Flanged
Power(W):
498.88 W
Supply Voltage:
50 V
more info
Description:10 MHz to 1 GHz, Power LDMOS transistor
Application Industry:
ISM, RF Energy, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
10 MHz to 1 GHz
Power:
50.79 to 52.04 dBm
Package Type:
Surface Mount
Power(W):
159.96 W
Supply Voltage:
50 V
Package:
SOT1223-2
more info
Description:8 W GaN Power HEMT Die from DC to 26 GHz
Application Industry:
Test & Measurement, Commercial, Military
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
DC to 26 GHz
Power:
39 dBm
Package Type:
Chip
Power(W):
8 W
Supply Voltage:
28 V
more info

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