RF Transistors - Page 25

2359 RF Transistors from 26 Manufacturers meet your specification.
Description:320 W, GaN on SiC OptiGaN HEMT from 1805 to 1880 MHz for 4G LTE & Open RAN Applications
Application Industry:
Cellular, Wireless Infrastructure, Broadcast, Base...
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
1805 to 1880 MHz
Power:
46.99 dBm
Package Type:
Surface Mount, Flanged
Power(W):
50 W
Gain:
13.9 dB
Supply Voltage:
48 V
more info
Description:52.04 dBm (160 W), LDMOS Transistor from 1800 to 2000 MHz
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
1.8 to 2 GHz
Power:
52.04 dBm
Package Type:
Surface Mount
Power(W):
159.96 W
Supply Voltage:
28 V
Package:
SOT1239B
more info
Description:HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.25µm x 400µm)
Application Industry:
Test & Measurement, Aerospace & Defence, Commercia...
Transistor Type:
pHEMT
Technology:
GaAs
CW/Pulse:
CW
Frequency:
DC to 26.5 GHz
Power:
25.5 dBm
Package Type:
Chip
Power(W):
0.35 W
Gain:
8.5 to 13.5 dB
Supply Voltage:
8 V
more info
A2T26H165-24S Image
Description:Airfast RF Power LDMOS Transistor, 2496-2690 MHz, 32 W Avg., 28 V
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
2.49 to 2.69 GHz
Power:
45.05 dBm
Package Type:
Flanged
Power(W):
31.99 W
Supply Voltage:
28 V
Package:
NI--780S--4L2L
more info
Description:DC to 941 MHz, MOSFET Transistor
Application Industry:
Wireless Infrastructure, Broadcast
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
CW
Frequency:
DC to 941 MHz
Power:
37.4 to 37.78 dBm
Package Type:
Flanged
Power(W):
6 W
Gain:
8.9 dB
Supply Voltage:
7.2 V
more info
Description:600W L-Band High Power Pulsed Transistor from 1030 to 1090 MHz
Application Industry:
Aerospace & Defence
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.03 to 1.09 GHz
Power:
57.78 to 58.45 dBm
Package Type:
Flanged
Power(W):
600 to 715 W
Gain:
18 dB
Supply Voltage:
50 V
more info
Description:468 W, GaN on SiC OptiGaN HEMT from 2110 to 2170 MHz for 4G LTE & Open RAN Applications
Application Industry:
Cellular, Wireless Infrastructure, Broadcast, Base...
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
2110 to 2170 MHz
Power:
48.98 dBm
Package Type:
Surface Mount, Flanged
Power(W):
79 W
Gain:
14.7 dB
Supply Voltage:
48 V
more info
Description:High Power Broadband GaN Transistor from 0.1 to 6 GHz
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
0.1 to 6 GHz
Power:
40.79 dBm
Package Type:
Flanged
Power(W):
12 W
Supply Voltage:
50 V
more info
Description:GaAs FET from 14.5 GHz
Transistor Type:
FET
Technology:
GaAs
Frequency:
14.5 GHz
Power:
26 to 27 dBm
Package Type:
Flanged
Power(W):
0.4 to 0.5 W
Package:
WG
more info
Description:16 W, GaN HEMT Transistor from DC to 20 GHz
Application Industry:
Radar, SATCOM
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
DC to 20 GHz
Power:
42.04 dBm
Package Type:
Die
Power(W):
16 W
Supply Voltage:
28 V
more info
Description:75 W, LDMOS RF Transistor from 3.1 to 3.5 GHz
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW, Pulse
Frequency:
3.1 to 3.5 GHz
Power:
48.751 dBm
Package Type:
Flanged
Power(W):
75 W
Supply Voltage:
28 V
more info

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