RF Transistors - Page 25

2357 RF Transistors from 26 Manufacturers meet your specification.
Description:28 W GaN Transistor from DC to 6 GHz for Open RAN Applications
Application Industry:
Cellular, Wireless Infrastructure, Broadcast, Base...
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
DC to 6 GHz
Power:
37.99 dBm
Package Type:
Surface Mount, Flanged
Power(W):
6.3 W
Supply Voltage:
48 V
more info
MRF6V2150NB Image
Description:Lateral N-Channel Single-Ended Broadband RF Power MOSFET, 10-450 MHz, 150 W, 50 V
Application Industry:
ISM, Broadcast
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
10 to 450 MHz
Power:
51.76 dBm
Package Type:
Flanged
Power(W):
149.97 W
Supply Voltage:
50 V
Package:
CASE 1484--04, STYLE 1 TO--272 WB--4 PLASTIC
more info
Description:2.4 to 4 GHz, HEMT Transistor
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Broa...
Transistor Type:
HEMT
Technology:
InGaAs
CW/Pulse:
CW
Frequency:
2.4 to 4 GHz
Package Type:
Flanged
Gain:
13 to 18 dB
Supply Voltage:
2 V
more info
Description:420 to 470 MHz, 1100 W Transistor for Pulsed Avionics Applications
Application Industry:
Radar
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
Pulse
Frequency:
420 to 470 MHz
Power:
60.41 dBm
Package Type:
Flanged
Power(W):
1100 W
Gain:
16.5 dB
Supply Voltage:
50 V
more info
Description:468 W, GaN on SiC OptiGaN HEMT from 2110 to 2170 MHz for 4G LTE & Open RAN Applications
Application Industry:
Cellular, Wireless Infrastructure, Broadcast, Base...
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
2110 to 2170 MHz
Power:
48.98 dBm
Package Type:
Surface Mount, Flanged
Power(W):
79 W
Gain:
14.7 dB
Supply Voltage:
48 V
more info
Description:250 W Power Transistor from 420 to 450 MHz for Radar Systems
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
420 to 450 MHz
Power:
53.98 dBm
Package Type:
Flanged
Power(W):
250 W
Gain:
23 to 25 dB
Supply Voltage:
50 V
more info
Description:GaAs FET from 5.9 to 6.4 GHz
Application Industry:
Communication, Wireless Infrastructure
Transistor Type:
FET
Technology:
GaAs
Frequency:
5.9 to 6.4 GHz
Power:
45 to 45.5 dBm
Package Type:
Flanged
Power(W):
31.62 to 35.48 W
Package:
IB
more info
Description:16 W, GaN HEMT Transistor from DC to 20 GHz
Application Industry:
Radar, SATCOM
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
DC to 20 GHz
Power:
42.04 dBm
Package Type:
Die
Power(W):
16 W
Supply Voltage:
28 V
more info
LET9045C Image
Description:59 W, LDMOS / MOSFET RF Transistor from 920 to 960 MHz
Application Industry:
Commercial, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
920 to 960 MHz
Power:
47.7 dBm
Power(W):
45 to 59 W
Supply Voltage:
28 to 36 V
more info
WG030034150I Image
Description:150 W, GaN on SiC Power Transistor from 3 to 3.4 GHz
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
3 to 3.4 GHz
Power:
51.76 dBm
Package Type:
Flanged
Power(W):
149.97 W
Supply Voltage:
50 V
more info
Description:Ceramic Packaged GaAs Power pHEMT DC-12 GHz
Application Industry:
Wireless Infrastructure, Radar, Broadcast
Transistor Type:
pHEMT
Technology:
GaAs
CW/Pulse:
CW
Frequency:
DC to 12 GHz
Power:
24.5 dBm
Package Type:
Flanged
Power(W):
0.28 W
Supply Voltage:
28 V
Package:
Ceramic
more info

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