RF Transistors - Page 27

2359 RF Transistors from 26 Manufacturers meet your specification.
Description:28.2 W, GaN on SiC OptiGaN HEMT from 1800 to 2700 MHz for 4G LTE & Open RAN Applications
Application Industry:
Cellular, Wireless Infrastructure, Broadcast, Base...
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
1800 to 2700 MHz
Power:
33.01 dBm
Package Type:
Surface Mount, Flanged
Power(W):
2 W
Gain:
17.9 dB
Supply Voltage:
48 V
more info
Description:70 W, 2-Stage LDMOS Integrated Doherty MMIC from 1.8 to 2.2 GHz
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
GaN
CW/Pulse:
CW, Pulse
Frequency:
1800 to 2200 MHz
Power:
47.0 to 48.5 dBm
Package Type:
Surface Mount
Power(W):
50.11 to 70.7 W
Supply Voltage:
5 V
more info
Description:HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.25µm x 1200µm)
Application Industry:
Test & Measurement, Aerospace & Defence, Commercia...
Transistor Type:
pHEMT
Technology:
GaAs
CW/Pulse:
CW
Frequency:
DC to 26 GHz
Power:
32 dBm
Package Type:
Chip
Power(W):
1.58 W
Gain:
8 to 12 dB
Supply Voltage:
8 V
more info
A2I25D025GN Image
Description:Airfast RF Power LDMOS Transistor, 2300-2690 MHz, 2.5 W Avg., 28 V
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
2.1 to 2.9 GHz
Power:
35.05 dBm
Package Type:
Flanged
Power(W):
3.2 W
Supply Voltage:
28 V
Package:
TO--270WBG--17 PLASTIC
more info
Description:100 W GaN HEMT from 13.75 to 14.5 GHz
Application Industry:
SATCOM
Transistor Type:
HEMT
Technology:
GaN
CW/Pulse:
CW
Frequency:
13.75 to 14.5 GHz
Power:
49 to 50 dBm
Package Type:
Flanged
Power(W):
79.43 to 100 W
Supply Voltage:
27 V
Package:
GF-69
more info
Description:420 to 470 MHz, 175 W Transistor for Pulsed Avionics Applications
Application Industry:
Radar
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
Pulse
Frequency:
420 to 470 MHz
Power:
52.43 dBm
Package Type:
Flanged
Power(W):
175 W
Gain:
25.5 dB
Supply Voltage:
50 V
more info
Description:302 W, GaN on SiC OptiGaN HEMT from 3400 to 3800 MHz for 4G LTE & Open RAN Applications
Application Industry:
Cellular, Wireless Infrastructure, Broadcast, Base...
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
3400 to 3800 MHz
Power:
46.53 dBm
Package Type:
Surface Mount, Flanged
Power(W):
45 W
Gain:
11.4 dB
Supply Voltage:
48 V
more info
Description:3100 to 3500 MHz, 8.2 dB Bipolar Transistor
Application Industry:
Radar
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
3.1 to 3.5 GHz
Power:
38.13 dBm
Package Type:
Flanged
Power(W):
6.5 W
Gain:
8.2 dB
Supply Voltage:
36 V
Package:
Ceramic
more info
Description:GaN on SiC, GaN HEMT from 1.96 GHz
Application Industry:
Cellular, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
Frequency:
1.96 GHz
Power:
49.5 dBm
Package Type:
Flanged
Power(W):
89.13 W
Supply Voltage:
50 V
more info
Description:8 W GaN HEMT Transistor from DC to 18 GHz
Application Industry:
Radar, SATCOM, Test & Measurement
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
Frequency:
DC to 18 GHz
Power:
36.02 dBm
Package Type:
Ceramic, 2-Hole Flanged
Power(W):
4 W
Supply Voltage:
28 to 32 V
more info
PD57018-E Image
Description:18 W, LDMOS / MOSFET RF Transistor from 925 to 960 MHz
Application Industry:
Broadcast, Commercial, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
925 to 960 MHz
Power:
42.55 dBm
Package Type:
Surface Mount
Power(W):
18 W
Supply Voltage:
28 V
more info

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