RF Transistors - Page 27

2357 RF Transistors from 26 Manufacturers meet your specification.
Description:Cost-Effective GaN on SiC Transistor from 1800 to 2200 MHz for Wireless Infra Applications
Application Industry:
Cellular, Wireless Infrastructure, Broadcast, Base...
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
1800 to 2200 MHz
Power:
48.98 dBm
Package Type:
Surface Mount, Flanged
Power(W):
79 W
Gain:
14.7 dB
Supply Voltage:
48 V
more info
MW7IC2425GN Image
Description:Lateral N-Channel RF Power MOSFET, 2450 MHz, 25 W CW, 28 V
Application Industry:
ISM, Broadcast
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
2.4 to 2.5 GHz
Power:
43.98 dBm
Package Type:
Flanged
Power(W):
25 W
Supply Voltage:
28 V
Package:
CASE 1887-01 TO-270 WB-16 GULL PLASTIC
more info
Description:30 W GaN HEMT from 13.75 to 14.5 GHz for SATCOM Earth Stations
Application Industry:
SATCOM, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
13.75 to 14.5 GHz
Power:
44.3 to 45.3 dBm
Package Type:
Flanged
Power(W):
26.91 to 33.88 W
Supply Voltage:
24 to 27 V
Package:
GF-68
more info
Description:1.02 to 1.15 GHz, 640 W Transistor for Pulsed Avionics Applications
Application Industry:
Aerospace & Defence
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.02 to 1.15 GHz
Power:
58.06 dBm
Package Type:
Flanged
Power(W):
640 W
Gain:
17.3 dB
Supply Voltage:
50 V
more info
Description:316 W, GaN on SiC OptiGaN HEMT from 1805 to 2200 MHz for 4G LTE & Open RAN Applications
Application Industry:
Cellular, Wireless Infrastructure, Broadcast, Base...
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
1805 to 2200 MHz
Power:
46.43 dBm
Package Type:
Surface Mount, Flanged
Power(W):
44 W
Gain:
15.4 dB
Supply Voltage:
48 V
more info
Description:3000 MHz, 11.7 dB Bipolar Transistor
Application Industry:
ISM
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
3 GHz
Power:
27.78 dBm
Package Type:
Flanged
Power(W):
0.6 W
Gain:
11.7 dB
Supply Voltage:
40 V
Package:
Ceramic
more info
Description:GaN on SiC, GaN HEMT from DC to 3.7 GHz
Application Industry:
Cellular, Wireless Infrastructure, Wireless Commun...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
Frequency:
DC to 3.7 GHz
Power:
41 dBm
Package Type:
Surface Mount
Power(W):
12.59 W
Supply Voltage:
50 V
more info
Description:8 W GaN HEMT Transistor from DC to 18 GHz
Application Industry:
Radar, SATCOM, Test & Measurement
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
Frequency:
DC to 18 GHz
Power:
36.02 dBm
Package Type:
Ceramic, 2-Hole Flanged
Power(W):
4 W
Supply Voltage:
28 to 32 V
more info
Description:100 W, LDMOS RF Transistor from DC to 1 GHz
Application Industry:
Avionics, ISM, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
DC to 1 GHz
Power:
50 dBm
Package Type:
Flanged
Power(W):
100 W
Supply Voltage:
50 V
more info
WG60028SF/P Image
Description:28 W, GaN on SiC Power Transistor from DC to 6 GHz
Application Industry:
Aerospace & Defence, Broadcast, Wireless Infrastru...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
DC to 6 GHz
Power:
44.47 dBm
Package Type:
Flanged
Power(W):
27.99 W
Supply Voltage:
50 V
more info
Description:Plastic Packaged GaAs Power FET
Application Industry:
Wireless Infrastructure
Transistor Type:
MESFET
Technology:
GaAs
CW/Pulse:
CW
Frequency:
DC to 6 GHz
Power:
22 dBm
Package Type:
Surface Mount, PCB Mount
Power(W):
0.16 W
Supply Voltage:
5 to 7 V
Package:
plastic
more info

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