RF Transistors - Page 43

2359 RF Transistors from 26 Manufacturers meet your specification.
IE18385D Image
Description:GaN Power Transistor
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
1.805 to 1.88 GHz
Power:
55.85 dBm
Package Type:
Flanged
Power(W):
384.59 W
Gain:
15.1 dB
Supply Voltage:
48 V
Package:
RF24001DKR3
more info
WG21200SP Image
Description:200 W, GaN on SiC Power Transistor from 2.11 to 2.17 GHz
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
2.11 to 2.17 GHz
Power:
53.01 dBm
Package Type:
Flanged
Power(W):
199.99 W
Supply Voltage:
50 V
more info
Description:Ceramic Package GaN AM060WX-BI-R Power HEMT DC-12GHz
Application Industry:
Wireless Infrastructure, Radar, Broadcast
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
DC to 12 GHz
Power:
32.5 to 33.5 dBm (P5dB)
Package Type:
Flanged
Power(W):
1.78 W
Supply Voltage:
28 V
Package:
Ceramic
more info
Description:125 W, Si VDMOS Power Transistor
Application Industry:
Aerospace & Defence, Broadcast, Wireless Infrastru...
Transistor Type:
VDMOS
Technology:
Si
Frequency:
1 to 150 MHz
Power:
50 dBm
Package Type:
Flanged
Power(W):
125 W
more info
Description:Single Voltage E-pHEMT Low Current Low Noise 24dBm OIP3 in MiniPak
Application Industry:
Wireless Infrastructure
Transistor Type:
E-pHEMT
Technology:
GaAs
CW/Pulse:
CW
Frequency:
450 MHz to 6 GHz
Power:
14.6 dBm
Package Type:
Surface Mount
Power(W):
0.03 W
Supply Voltage:
2.7 V
Package:
SMT 1.4x1.2
more info
Description:GaAs FET for Military & Space Applications Up to 26 GHz
Application Industry:
Commercial, Military, Space, Wireless Infrastructu...
Transistor Type:
FET
Technology:
GaAs
CW/Pulse:
CW
Frequency:
DC to 26 GHz
Power:
21 dBm
Package Type:
Chip
Power(W):
0.13 W
Gain:
11 dB
Supply Voltage:
6 to 7 V
more info
Description:RF POWER VERTICAL MOSFET
Application Industry:
Aerospace & Defence, Commercial
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
Pulse
Frequency:
DC to 80 MHz
Power:
57.78 dBm
Package Type:
Flanged
Power(W):
599.79 W
Supply Voltage:
50 V
Package:
T2
more info
Description:2.62 to 2.69 GHz, HEMT Transistor
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
2.62 to 2.69 GHz
Power:
53.01 dBm
Package Type:
Flanged
Power(W):
199.99 W
Gain:
23 dB
Supply Voltage:
48 V
Package:
Ceramic
more info
Description:48 V GaN HEMT Transistor that operates from DC to 4.0 GHz with 12 W Saturated Power
Application Industry:
ISM, Wireless Infrastructure, Aerospace & Defence,...
Transistor Type:
HEMT
Technology:
GaN on Si, GaN
CW/Pulse:
Pulse, CW
Frequency:
DC to 3.5 GHz
Power:
40.97 dBm
Package Type:
Surface Mount
Power(W):
12.5 W
Gain:
17.5 dB
Supply Voltage:
48 V
Package:
6x3mm PDFN-14LD
more info
Description:LDMOS 2-Stage Integrated Doherty MMIC Transistor from 2.11 to 2.17 GHz
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW, Pulse
Frequency:
2.11 to 2.17 GHz
Power:
38.5 to 39.2 dBm (P3dB)
Package Type:
Surface Mount
Power(W):
7.08 to 8.32 W
Supply Voltage:
28 V
more info
Description:HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.3 µm x 600 µm)
Application Industry:
Test & Measurement, Aerospace & Defence, Commercia...
Transistor Type:
MESFET
Technology:
GaAs
CW/Pulse:
CW
Frequency:
DC to 26.5 GHz
Power:
25 dBm
Package Type:
Chip
Power(W):
0.32 W
Gain:
7.8 to 12.5 dB
Supply Voltage:
6 to 8 V
more info

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