RF Transistors - Page 43

2360 RF Transistors from 26 Manufacturers meet your specification.
IE27165PE Image
Description:GaN Power Transistor
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
2.62 to 2.69 GHz
Power:
52.17 dBm
Package Type:
Flanged
Power(W):
164.82 W
Gain:
16.9 dB
Supply Voltage:
48 V
Package:
NS-AS01
more info
WG18200S Image
Description:200W GaN power transistor for Infrastructure applications at frequencies from 1805 MHz to 1880 MHz
Application Industry:
Wireless Infrastructure
Transistor Type:
FET
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
1.8 to 1.88 GHz
Power:
53.01 dBm
Package Type:
Flanged
Power(W):
199.99 W
Supply Voltage:
48 V
Package:
Flanged
more info
Description:Ceramic Package GaN AM060WX-BI-R Power HEMT DC-18GHz
Application Industry:
Wireless Infrastructure, Radar, Broadcast
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
DC to 18 GHz
Power:
33.2 to 33.4 dBm (P5dB)
Package Type:
Die
Power(W):
2.09 W
Supply Voltage:
28 V
more info
Description:20 W, Si LDMOS Power Transistor
Application Industry:
Aerospace & Defence, Broadcast, Wireless Infrastru...
Transistor Type:
LDMOS
Technology:
Si
Frequency:
1 to 500 MHz
Power:
43 dBm
Package Type:
Flanged
Power(W):
20 W
more info
Description:Single Voltage E-pHEMT Low Current Low Noise 24dBm OIP3 in MiniPak
Application Industry:
Wireless Infrastructure
Transistor Type:
E-pHEMT
Technology:
GaAs
CW/Pulse:
CW
Frequency:
450 MHz to 6 GHz
Power:
14.6 dBm
Package Type:
Surface Mount
Power(W):
0.03 W
Supply Voltage:
2.7 V
Package:
SMT 1.4x1.2
more info
Description:Space Qualified GaAs FETs at 12 GHz
Application Industry:
Military, Space, Test & Measurement, Wireless Infr...
Transistor Type:
FET
Technology:
GaAs
CW/Pulse:
CW
Frequency:
12 GHz
Power:
27 dBm
Package Type:
Chip
Power(W):
0.5 W
more info
Description:100 W, GaN on SiC Transistor from 1000 to 14000 MHz
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
1000 to 14000 MHz
Power:
50 dBm
Package Type:
Die
Power(W):
100 W
Supply Voltage:
28 V
more info
Description:DC to 4 GHz, HEMT Transistor
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
DC to 4 GHz
Power:
36.99 dBm
Package Type:
Surface Mount
Power(W):
5 W
Gain:
19 dB
Supply Voltage:
32 V
more info
Description:2.1 to 2.7 GHz, HEMT Transistor
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on Si, GaN
CW/Pulse:
Pulse, CW
Frequency:
2.1 to 2.7 GHz
Power:
49.54 dBm
Package Type:
Flanged
Power(W):
89.95 W
Gain:
16 dB
Supply Voltage:
28 V
Package:
Flange Ceramic
more info
Description:49.54 dBm (90 W), LDMOS Transistor from 1427 to 2170 MHz
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
1.42 to 2.17 GHz
Power:
49.54 dBm
Package Type:
Surface Mount
Power(W):
89.95 W
Supply Voltage:
28 V
Package:
SOT1121B
more info
Description:HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.3 µm x 800 µm)
Application Industry:
Test & Measurement, Aerospace & Defence, Commercia...
Transistor Type:
MESFET
Technology:
GaAs
CW/Pulse:
CW
Frequency:
DC to 26.5 GHz
Power:
26 dBm
Package Type:
Chip
Power(W):
0.4 W
Gain:
7.3 to 11.2 dB
Supply Voltage:
6 to 8 V
more info

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