RF Transistors - Page 48

2357 RF Transistors from 26 Manufacturers meet your specification.
Description:275 W Asymmetrical Doherty GaN HEMT from 1805 to 1880 MHz
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse
Frequency:
1805 to 1880 MHz
Power:
53.01 to 55.2 dBm (Psat)
Package Type:
Flanged
Power(W):
200 to 331 W (Psat)
Gain:
13.4 to 13.8 dB
Supply Voltage:
48 to 52 V
more info
Description:Ceramic Package GaN AM060WX-BI-R Power HEMT DC-18GHz
Application Industry:
Wireless Infrastructure, Radar, Broadcast
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
DC to 18 GHz
Power:
33.2 to 33.4 dBm (P5dB)
Package Type:
Die
Power(W):
2.09 W
Supply Voltage:
28 V
more info
Description:8 W, Si VDMOS Power Transistor
Application Industry:
Aerospace & Defence, Broadcast, Wireless Infrastru...
Transistor Type:
VDMOS
Technology:
Si
Frequency:
1 to 1000 MHz
Power:
39 dBm
Package Type:
Flanged
Power(W):
8 W
more info
Description:RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Broa...
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
CW
Frequency:
DC to 1.3 GHz
Package Type:
Through Hole
Supply Voltage:
5 V
Package:
TO-72
more info
Description:Space Qualified LOW NOISE FETS from 4 to 12 GHz
Application Industry:
Military, Space, Test & Measurement, Wireless Infr...
Transistor Type:
FET
CW/Pulse:
CW
Frequency:
4 to 12 GHz
Power:
16 dBm
Package Type:
Chip
Power(W):
0.04 W
Gain:
10 to 13 dB
more info
QPD2018D Image
Description:Discrete GaAs pHEMT Transistor Die from DC to 20 GHz
Application Industry:
Aerospace & Defence, Test & Measurement, Commercia...
Transistor Type:
pHEMT
Technology:
GaAs
Frequency:
DC to 20 GHz
Power:
22 dBm (Psat)
Package Type:
Surface Mount
Power(W):
0.15 W (Psat)
Gain:
14 dB
Supply Voltage:
8 V
Package:
Die
more info
Description:Si Based TMOS Transistor
Application Industry:
Aerospace & Defence, Radar, ISM, Broadcast, Commer...
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
CW
Frequency:
5 to 500 MHz
Power:
53.01 dBm
Package Type:
Flanged
Power(W):
199.99 W
Gain:
12 dB
Supply Voltage:
28 V
Package:
Flange Ceramic
more info
Description:A 600 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 128 MHz band.
Application Industry:
ISM, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
10 to 128 MHz
Power:
57.78 dBm
Package Type:
Surface Mount
Power(W):
599.79 W
Supply Voltage:
50 V
Package:
SOT1214B
more info
Description:HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.3 µm x 300 µm)
Application Industry:
Test & Measurement, Aerospace & Defence, Commercia...
Transistor Type:
MESFET
Technology:
GaAs
CW/Pulse:
CW
Frequency:
DC to 26.5 GHz
Power:
21.7 dBm
Package Type:
Chip
Power(W):
0.15 W
Gain:
8.9 to 13.5 dB
Supply Voltage:
6 to 8 V
more info
MMRF1009HS Image
Description:Pulse Lateral N-Channel RF Power MOSFET, 960-1215 MHz, 500 W, 50 V
Application Industry:
Aerospace & Defence, Commercial, Avionics
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
960 MHz to 1.215 GHz
Power:
56.99 dBm
Package Type:
Flanged
Power(W):
500.03 W
Supply Voltage:
50 V
Package:
NI--780S--2L
more info
Description:175 to 520 MHz, MOSFET Transistor
Application Industry:
Wireless Infrastructure, Broadcast
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
CW
Frequency:
175 to 520 MHz
Power:
33.01 to 34.77 dBm
Package Type:
Flanged
Power(W):
3 W
Gain:
16 dB
Supply Voltage:
7.2 V
more info

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