RF Transistors - Page 48

2360 RF Transistors from 26 Manufacturers meet your specification.
Description:GaN Power Transistor
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
2.11 to 2.17 GHz
Power:
53.4 dBm
Package Type:
Flanged
Power(W):
218.78 W
Gain:
17.4 dB
Supply Voltage:
48 V
Package:
NS-AS01
more info
Description:High Power Rev 7 GaAs Power FET
Application Industry:
Wireless Infrastructure
Transistor Type:
MESFET
Technology:
GaAs
CW/Pulse:
CW
Frequency:
DC to 6 GHz
Power:
35 dBm
Package Type:
Flanged
Power(W):
3.16 W
Supply Voltage:
7 V
Package:
Ceramic
more info
Description:7 W, Si LDMOS Power Transistor
Application Industry:
Aerospace & Defence, Broadcast, Wireless Infrastru...
Transistor Type:
LDMOS
Technology:
Si
Frequency:
1 to 500 MHz
Power:
38 dBm
Package Type:
Surface Mount
Power(W):
7 W
more info
Description:AlGaAs/InGaAs pHEMT for Military & Space Applications Up to 18 GHz
Application Industry:
Commercial, Military, Space, Wireless Infrastructu...
Transistor Type:
pHEMT
Technology:
AlGaAs/InGaAs
CW/Pulse:
CW
Frequency:
DC to 18 GHz
Power:
28.5 dBm
Package Type:
Chip
Power(W):
0.71 W
Supply Voltage:
2.5 to 8 V
more info
Description:E-Series GaN Transistor Driver
Application Industry:
Aerospace & Defence, Radar, Avionics
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
960 MHz to 1.215 GHz
Power:
46.99 to 47.63 dBm
Package Type:
Die
Power(W):
57.94 W
Supply Voltage:
50 V
Package:
55-QQP
more info
Description:DC to 4 GHz, HEMT Transistor
Application Industry:
Wireless Infrastructure, Radar, Test & Measurement...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
DC to 4 GHz
Power:
46.53 dBm
Package Type:
Surface Mount
Power(W):
44.98 W
Gain:
22.3 dB
Supply Voltage:
48 to 55 V
Package:
4.0 x 3.0 mm
more info
Description:Si Based Bipolar Transistor
Application Industry:
Aerospace & Defence, ISM, Radar
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
3.1 to 3.4 GHz
Power:
47.4 dBm
Package Type:
Flanged
Power(W):
54.95 W
Gain:
7.5 dB
Supply Voltage:
36 V
Package:
Flange Ceramic
more info
Description:3-Stage LDMOS Doherty MMIC from 3300 to 3800 MHz
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW, Pulse
Frequency:
3.3 to 3.8 GHz
Power:
48 to 49 dBm (P3dB)
Package Type:
Surface Mount
Power(W):
63 to 79.4 W (P3dB)
Supply Voltage:
28 V
Package:
PQFN
more info
Description:HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.25µm x 300µm)
Application Industry:
Test & Measurement, Aerospace & Defence, Commercia...
Transistor Type:
pHEMT
Technology:
GaAs
CW/Pulse:
CW
Frequency:
DC to 26.5 GHz
Power:
24.5 dBm
Package Type:
Chip
Power(W):
0.28 W
Gain:
9 to 13.5 dB
Supply Voltage:
8 V
more info
AFT09MP055N Image
Description:Airfast Broadband RF Power LDMOS Transistor, 764-941 MHz, 55 W, 12.5 V
Application Industry:
Wireless Infrastructure, Broadcast
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
764 to 941 MHz
Power:
47.4 dBm
Package Type:
Flanged
Power(W):
54.95 W
Supply Voltage:
12.5 V
Package:
TO--270WB--4
more info
Description:13.75 to 14.5 GHz, HEMT Transistor
Application Industry:
SATCOM
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
13.75 to 14.5 GHz
Power:
43.01 dBm
Package Type:
Flanged
Power(W):
20 W
Supply Voltage:
24 V
more info

FiltersReset All

Application Industry

Transistor Type

Technology

CW/Pulse

Frequency

 
 
Apply

Power (dBm)

Apply

Power(W)

Apply

Gain (dB)

Apply

Supply Voltage (V)

Apply

Package Type