RF Transistors - Page 47

2359 RF Transistors from 26 Manufacturers meet your specification.
Description:GaN Power Transistor
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
770 to 900 GHz
Power:
52.17 dBm
Package Type:
Flanged
Power(W):
164.82 W
Gain:
20.9 dB
Supply Voltage:
48 V
Package:
NS-AS01
more info
Description:56.99 dBm (500 W), LDMOS Transistor from 1400 to 1500 MHz
Application Industry:
Broadcast, ISM, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
1.4 to 1.5 GHz
Power:
56.98 dBm
Package Type:
Surface Mount
Power(W):
498.88 W
Supply Voltage:
50 V
Package:
SOT539A
more info
Description:HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.25µm x 300µm)
Application Industry:
Test & Measurement, Aerospace & Defence, Commercia...
Transistor Type:
pHEMT
Technology:
GaAs
CW/Pulse:
CW
Frequency:
DC to 26.5 GHz
Power:
24.5 dBm
Package Type:
Chip
Power(W):
0.28 W
Gain:
9 to 13.5 dB
Supply Voltage:
8 V
more info
MRF8S9202GN Image
Description:Single W-CDMA Lateral N-Channel RF Power MOSFET, 920-960 MHz, 58 W Avg., 28 V
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
920 to 960 MHz
Power:
47.63 dBm
Package Type:
Flanged
Power(W):
57.94 W
Supply Voltage:
28 V
Package:
CASE 2267--01 OM--780--2 GULL PLASTIC
more info
Description:DC to 175 MHz, MOSFET Transistor
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Broa...
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
CW
Frequency:
DC to 175 MHz
Power:
40 dBm
Package Type:
Flanged
Power(W):
10 W
Supply Voltage:
7.2 V
more info
Description:440 W, GaN on SiC OptiGaN HEMT from 758 to 821 MHz for 4G LTE & Open RAN Applications
Application Industry:
Cellular, Wireless Infrastructure, Broadcast, Base...
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
758 to 821 MHz
Power:
48.98 dBm
Package Type:
Surface Mount, Flanged
Power(W):
79 W
Gain:
17.5 dB
Supply Voltage:
48 V
more info
Description:960 MHz to 1.22 GHz, HEMT Transistor
Application Industry:
Aerospace & Defence, Avionics
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
960 MHz to 1.22 GHz
Power:
56.99 dBm
Package Type:
Flanged
Power(W):
500.03 W
Gain:
15 dB
Supply Voltage:
50 V
Package:
Ceramic
more info
Description:GaAs FET from 3.1 to 3.5 GHz
Application Industry:
Communication, Wireless Infrastructure
Transistor Type:
FET
Technology:
GaAs
Frequency:
3.1 to 3.5 GHz
Power:
40.5 to 41.5 dBm
Package Type:
Flanged
Power(W):
11.22 to 14.13 W
Package:
IK
more info
Description:76.38 W, GaN HEMT Transistor from DC to 4 GHz
Application Industry:
Wireless Infrastructure, Test & Measurement, Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
DC to 4 GHz
Power:
48.83 dBm
Package Type:
Flanged
Power(W):
76.38 W
Supply Voltage:
48 V
more info
PD84006L-E Image
Description:6 W, LDMOS RF Transistor from 740 to 950 MHz
Application Industry:
Broadcast, Commercial, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
740 to 950 MHz
Power:
37.78 dBm
Power(W):
5 to 6 W
Supply Voltage:
7.5 to 9.5 V
more info
WG60002SD Image
Description:2 W, GaN on SiC Power Transistor from DC to 6 GHz
Application Industry:
Aerospace & Defence, Broadcast, Wireless Infrastru...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
DC to 6 GHz
Power:
33.01 dBm
Package Type:
Surface Mount
Power(W):
2 W
Supply Voltage:
28 V
more info

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