RF Transistors - Page 47

2360 RF Transistors from 26 Manufacturers meet your specification.
IE27220PE Image
Description:GaN Power Transistor
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
2.62 to 2.69 GHz
Power:
53.4 dBm
Package Type:
Flanged
Power(W):
218.78 W
Gain:
17 dB
Supply Voltage:
48 V
Package:
NS-AS01
more info
BLF898 Image
Description:470 to 800 MHz, UHF power LDMOS transistor
Application Industry:
RF Energy, Wireless Infrastructure, Braodcast, ISM
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
470 to 800 MHz
Power:
59.54 dBm
Package Type:
Surface Mount
Power(W):
899.5 W
Supply Voltage:
50 V
Package:
SOT539A
more info
Description:4 W GaN HEMT from DC to 26 GHz
Application Industry:
Test & Measurement, Commercial, Military
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
DC to 26 GHz
Power:
36.5 dBm
Package Type:
Chip
Power(W):
4 W
Supply Voltage:
28 V
more info
MRF101AN Image
Description:100 W LDMOS RF Transistor
Application Industry:
Broadcast, Aerospace & Defence, ISM, Radar, Broadc...
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW, Pulse
Frequency:
1.8 to 250 MHz
Power:
50 dBm
Package Type:
Through Hole
Power(W):
100 W
Package:
TO-220
more info
Description:DC to 12 GHz, HEMT Transistor
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Broa...
Transistor Type:
HEMT
Technology:
InGaAs
CW/Pulse:
CW
Frequency:
DC to 12 GHz
Package Type:
Flanged
Gain:
11.5 to 12.5 dB
Supply Voltage:
2 V
more info
Description:310 W, GaN on SiC OptiGaN HEMT from 2620 to 2690 MHz for 4G LTE & Open RAN Applications
Application Industry:
Cellular, Wireless Infrastructure, Broadcast, Base...
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
2620 to 2690 MHz
Power:
47.32 dBm
Package Type:
Surface Mount, Flanged
Power(W):
54 W
Gain:
14.1 dB
Supply Voltage:
48 V
more info
Description:2900 to 3300 MHz, 11 dB LDMOS Transistor
Application Industry:
Radar
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
2.9 to 3.3 GHz
Power:
41.14 dBm
Package Type:
Flanged
Power(W):
13 W
Gain:
11 dB
Supply Voltage:
32 V
Package:
Ceramic
more info
Description:GaN on SiC, GaN HEMT from 2.7 to 2.9 GHz
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
2.7 to 2.9 GHz
Power:
57.7 to 58.45 dBm
Package Type:
Flanged
Power(W):
600 to 700 W
Supply Voltage:
50 V
more info
Description:30.9 W, GaN HEMT Transistor from DC to 3.5 GHz
Application Industry:
Wireless Infrastructure, Test & Measurement, Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
DC to 3.5 GHz
Power:
44.9 dBm
Package Type:
Flanged
Power(W):
30.9 W
Supply Voltage:
48 V
more info
Description:260 W, LDMOS RF Transistor from 1.2 to 1.4 GHz
Application Industry:
Avionics, Radar, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW, Pulse
Frequency:
1.2 to 1.4 GHz
Power:
53.979 to 54.15 dBm
Power(W):
250 to 260 W
Supply Voltage:
36 V
more info
WG027031200I Image
Description:200 W, GaN on SiC Power Transistor from 2.7 to 3.1 GHz
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
2.7 to 3.1 GHz
Power:
53.01 dBm
Package Type:
Flanged
Power(W):
199.99 W
Supply Voltage:
36 V
more info

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