RF Transistors - Page 44

2360 RF Transistors from 26 Manufacturers meet your specification.
Description:GaN Power Transistor
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
2.62 to 2.69 GHz
Power:
55.89 dBm
Package Type:
Flanged
Power(W):
388.15 W
Gain:
13.8 dB
Supply Voltage:
48 V
Package:
RF24001DKR3
more info
MRF8S7120N Image
Description:Single W-CDMA Lateral N-Channel RF Power MOSFET, 728-768 MHz, 32 W Avg., 28 V
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
728 to 768 MHz
Power:
45.05 dBm
Package Type:
Flanged
Power(W):
31.99 W
Supply Voltage:
28 V
Package:
CASE 2021--03, STYLE 1 OM--780--2 PLASTIC
more info
Description:DC to 12 GHz, HEMT Transistor
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Broa...
Transistor Type:
HEMT
Technology:
InGaAs
CW/Pulse:
CW
Frequency:
DC to 12 GHz
Power:
15 dBm
Package Type:
Flanged
Power(W):
0.03 W
Gain:
9 dB
Supply Voltage:
3 V
more info
Description:398 W, GaN on SiC OptiGaN HEMT from 2620 to 2690 MHz for 4G LTE & Open RAN Applications
Application Industry:
Cellular, Wireless Infrastructure, Broadcast, Base...
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
2620 to 2690 MHz
Power:
48.98 dBm
Package Type:
Surface Mount, Flanged
Power(W):
79 W
Gain:
11.9 dB
Supply Voltage:
48 V
more info
Description:1030 to 1090 MHz, 17.3 dB LDMOS Transistor
Application Industry:
Aerospace & Defence, Avionics
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.03 GHz
Power:
60 to 61.51 dBm
Package Type:
Flanged
Power(W):
1415.79 W
Gain:
17.3 dB
Supply Voltage:
50 V
Package:
Ceramic
more info
Description:GaAs HEMT from 12 GHz
Transistor Type:
HEMT
Technology:
GaAs
Frequency:
12 GHz
Power:
10 dBm
Package Type:
Surface Mount
Power(W):
0 to 0.01 W
Gain:
9.5 to 10.5 dB
Supply Voltage:
2 V
more info
Description:62 W, GaN HEMT Transistor from DC to 10 GHz
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
DC to 10 GHz
Power:
47.92 dBm
Package Type:
Die
Power(W):
61.94 W
Supply Voltage:
48 V
more info
Description:45 W, LDMOS RF Transistor from 700 MHz to 1.7 GHz
Application Industry:
ISM, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
700 MHz to 1.7 GHz
Power:
46.53 dBm
Package Type:
Flanged
Power(W):
45 W
Supply Voltage:
28 V
more info
WG60028S Image
Description:28W GaN power transistor for Infrastructure applications at frequencies from DC to 6000 MHz
Application Industry:
Aerospace & Defence, Wireless Infrastructure, Broa...
Transistor Type:
FET
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
DC to 6 GHz
Power:
44.27 dBm
Package Type:
Surface Mount
Power(W):
26.73 W
Supply Voltage:
40 V
Package:
Flanged
more info
Description:HiFET High Voltage GaAs FET DC-12 GHz
Application Industry:
Wireless Infrastructure, Radar, Broadcast
Transistor Type:
FET
Technology:
GaAs
CW/Pulse:
CW
Frequency:
DC to 12 GHz
Power:
38 dBm
Package Type:
Flanged
Power(W):
6.31 W
Supply Voltage:
28 V
Package:
Ceramic
more info
Description:100 W, Si VDMOS Power Transistor
Application Industry:
Aerospace & Defence, Broadcast, Wireless Infrastru...
Transistor Type:
VDMOS
Technology:
Si
Frequency:
1 to 175 MHz
Power:
50 dBm
Package Type:
Flanged
Power(W):
100 W
more info

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