RF Transistors - Page 44

2357 RF Transistors from 26 Manufacturers meet your specification.
Description:GaN on SiC HEMT from 2300 to 2400 MHz
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse
Frequency:
2300 to 2400 MHz
Power:
46.81 to 54.8 dBm
Package Type:
Flanged
Power(W):
48 to 302 W
Gain:
12.5 to 13.5 dB
Supply Voltage:
55 V
Package:
RF18010DKR3
more info
A2T18H450W19S Image
Description:1.8GHZ 450W NI1230S-4S4S
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
1.805 to 1.88 GHz
Power:
49.49 dBm
Package Type:
Flanged
Power(W):
88.92 W
Supply Voltage:
32 Vdc
Package:
NI--1230S--4S4S
more info
Description:70 W GaN HEMT from 12.75 to 13.25 GHz for SATCOM Applications
Application Industry:
SATCOM
Transistor Type:
HEMT
Technology:
GaN
Frequency:
12.75 to 13.25 GHz
Power:
47.3 to 48.3 dBm
Package Type:
Flanged
Power(W):
53.7 to 67.6 W
Supply Voltage:
24 V
more info
Description:398 W, GaN on SiC OptiGaN HEMT from 1930 to 2000 MHz for 4G LTE & Open RAN Applications
Application Industry:
Cellular, Wireless Infrastructure, Broadcast, Base...
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
1930 to 2000 MHz
Power:
48.98 dBm
Package Type:
Surface Mount, Flanged
Power(W):
79 W
Gain:
14.4 dB
Supply Voltage:
48 V
more info
Description:3.1 to 3.5 GHz, HEMT Transistor
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
3.1 to 3.5 GHz
Power:
53.89 to 54.07 dBm
Package Type:
Flanged
Power(W):
255.27 W
Gain:
13.1 dB
Supply Voltage:
50 V
Package:
Ceramic
more info
Description:GaN on SiC, GaN HEMT from 2.2 GHz
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
2.2 GHz
Power:
46.5 to 47.5 dBm
Package Type:
Flanged
Power(W):
44.66 to 56.2 W
Gain:
15 to 16 dB
Supply Voltage:
50 V
more info
Description:45 W, GaN HEMT Transistor from DC to 8 GHz
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
DC to 8 GHz
Power:
46.53 dBm
Package Type:
Die
Power(W):
44.98 W
Supply Voltage:
48 V
more info
PD85015-E Image
Description:20 W, LDMOS / MOSFET RF Transistor from 500 MHz to 1 GHz
Application Industry:
Broadcast, Commercial, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
500 MHz to 1 GHz
Power:
43.01 dBm
Package Type:
Surface Mount
Power(W):
15 to 20 W
Supply Voltage:
13.6 V
more info
WG60028D Image
Description:GaN-on-SiC Dual-Output Transistor for Aerospace & Telecom Applications
Application Industry:
Aerospace & Defence, Broadcast, Wireless Infrastru...
Technology:
GaN on SiC, GaN
Frequency:
DC to 6 GHz
Power:
44.47 dBm
Package Type:
Surface Mount
Power(W):
28 W
Supply Voltage:
50 V
Package:
DFN
more info
Description:Plastic Packaged GaAs Power FET
Application Industry:
Wireless Infrastructure
Transistor Type:
MESFET
Technology:
GaAs
CW/Pulse:
CW
Frequency:
DC to 6 GHz
Power:
29.5 dBm
Package Type:
Surface Mount, PCB Mount
Power(W):
0.89 W
Supply Voltage:
5 to 7 V
Package:
plastic
more info
Description:35 W, GaN on SiC HEMT Power Transistor
Application Industry:
Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
Frequency:
1 MHz to 3 GHz
Power:
45 dBm
Package Type:
Flanged
Power(W):
35 W
more info

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