RF Transistors - Page 41

2360 RF Transistors from 26 Manufacturers meet your specification.
Description:GaN Power Transistor
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
2.575 to 2.635 GHz
Power:
52.9 dBm
Package Type:
Flanged
Power(W):
194.98 W
Gain:
14.4 dB
Supply Voltage:
48 V
Package:
RF24001DKR3
more info
Description:1030 to 1090 MHz, 16.5 dB LDMOS Transistor
Application Industry:
Aerospace & Defence, Avionics
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.03 to 1.09 GHz
Power:
52.04 to 54.52 dBm
Package Type:
Flanged
Power(W):
283.14 W
Gain:
16.5 dB
Supply Voltage:
50 V
Package:
Ceramic
more info
Description:GaAs FET from 2 GHz
Application Industry:
Wireless Infrastructure
Transistor Type:
FET
Technology:
GaAs
Frequency:
2 GHz
Power:
31.5 to 32.5 dBm
Package Type:
Surface Mount
Power(W):
1.41 to 1.78 W
Supply Voltage:
10 V
Package:
ZM
more info
Description:158 W, GaN HEMT Transistor from DC to 5 GHz
Application Industry:
Wireless Infrastructure, Test & Measurement, Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
DC to 5 GHz
Power:
51.99 dBm
Package Type:
Flanged
Power(W):
158.12 W
Gain:
8.7 dB
Supply Voltage:
48 V
more info
PD84008L-E Image
Description:9 W, LDMOS RF Transistor operating at 870 MHz
Application Industry:
Broadcast, Commercial, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
870 MHz
Power:
39.54 dBm
Power(W):
8 to 9 W
Supply Voltage:
7.5 to 9.5 V
more info
WGB01006040F Image
Description:40 W, GaN on SiC Power Transistor from 1 to 6 GHz
Application Industry:
Aerospace & Defence, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
1 to 6 GHz
Power:
46.02 dBm
Package Type:
Flanged
Power(W):
39.99 W
Supply Voltage:
50 V
more info
Description:HiFET High Voltage GaAs FET DC-12 GHz
Application Industry:
Wireless Infrastructure, Radar, Broadcast
Transistor Type:
FET
Technology:
GaAs
CW/Pulse:
CW
Frequency:
DC to 12 GHz
Power:
33 dBm
Package Type:
Flanged
Power(W):
2 W
Supply Voltage:
28 V
Package:
Ceramic
more info
Description:125 W, Si LDMOS Power Transistor
Application Industry:
Broadcast, Wireless Communication
Transistor Type:
LDMOS
Technology:
Si
Frequency:
1 to 1100 MHz
Power:
50 dBm
Package Type:
Flanged
Power(W):
125 W
more info
Description:Single Voltage E-pHEMT Low Noise 36 dBm OIP3 in MiniPak
Application Industry:
Wireless Infrastructure
Transistor Type:
E-pHEMT
Technology:
GaAs
CW/Pulse:
CW
Frequency:
450 MHz to 10 GHz
Power:
21.4 dBm
Package Type:
Surface Mount
Power(W):
0.14 W
Supply Voltage:
3 V
Package:
SMT 1.4x1.2
more info
Description:GaAs FET for Military & Space Applications Up to 26 GHz
Application Industry:
Commercial, Military, Space, Wireless Infrastructu...
Transistor Type:
FET
Technology:
GaAs
CW/Pulse:
CW
Frequency:
DC to 26 GHz
Power:
22 dBm
Package Type:
Chip
Power(W):
0.16 W
Supply Voltage:
6 to 7 V
more info
Description:2 Watts, 25 Volts, Class A UHF Television - Band IV & V
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Broa...
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
CW
Frequency:
470 to 860 MHz
Power:
33.01 dBm
Package Type:
Screw Mount, Flanged
Power(W):
2 W
Supply Voltage:
25 V
Package:
55FT-2
more info

FiltersReset All

Application Industry

Transistor Type

Technology

CW/Pulse

Frequency

 
 
Apply

Power (dBm)

Apply

Power(W)

Apply

Gain (dB)

Apply

Supply Voltage (V)

Apply

Package Type