RF Transistors - Page 41

2357 RF Transistors from 26 Manufacturers meet your specification.
Description:GaN Power Transistor
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
2.11 to 2.17 GHz
Power:
55.18 dBm
Package Type:
Flanged
Power(W):
329.61 W
Gain:
15.6 dB
Supply Voltage:
48 V
Package:
NS-AS01
more info
Description:1030 MHz, 9.2 dB Bipolar Transistor
Application Industry:
Aerospace & Defence, Avionics
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.03 to 1.09 GHz
Power:
48.54 to 50.04 dBm
Package Type:
Flanged
Power(W):
100.93 W
Gain:
9.2 dB
Supply Voltage:
50 V
Package:
Ceramic
more info
Description:GaAs FET from 8 GHz
Transistor Type:
FET
Technology:
GaAs
Frequency:
8 GHz
Power:
20.5 to 21.5 dBm
Package Type:
Ceramic
Power(W):
0.11 to 0.14 W
more info
Description:280 to 410 W, GaN HEMT Transistor from DC to 3.5 GHz
Application Industry:
Wireless Infrastructure, Test & Measurement, Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
DC to 3.5 GHz
Power:
56.13 dBm
Package Type:
Flanged
Power(W):
410.2 W
Supply Voltage:
48 V
more info
PD57018-E Image
Description:18 W, LDMOS / MOSFET RF Transistor from 925 to 960 MHz
Application Industry:
Broadcast, Commercial, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
925 to 960 MHz
Power:
42.55 dBm
Package Type:
Surface Mount
Power(W):
18 W
Supply Voltage:
28 V
more info
WG60002SD Image
Description:2 W, GaN on SiC Power Transistor from DC to 6 GHz
Application Industry:
Aerospace & Defence, Broadcast, Wireless Infrastru...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
DC to 6 GHz
Power:
33.01 dBm
Package Type:
Surface Mount
Power(W):
2 W
Supply Voltage:
28 V
more info
Description:Ceramic Package GaN AM060WX-BI-R Power HEMT DC-6GHz
Application Industry:
Wireless Infrastructure, Radar, ISM, Commercial
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
DC to 6 GHz
Power:
42 to 43 dBm (P5dB)
Package Type:
Flanged
Power(W):
15.85 W
Supply Voltage:
28 Vdc
Package:
Ceramic
more info
Description:7 W, Si LDMOS Power Transistor
Application Industry:
Aerospace & Defence, Broadcast, Wireless Infrastru...
Transistor Type:
LDMOS
Technology:
Si
Frequency:
1 to 500 MHz
Power:
38 dBm
Package Type:
Surface Mount
Power(W):
7 W
more info
Description:Single Voltage E-pHEMT Low Noise 42 dBm OIP3 in SOT-89 package
Application Industry:
Wireless Infrastructure
Transistor Type:
E-pHEMT
Technology:
GaAs
CW/Pulse:
CW
Frequency:
0.05 to 6 GHz
Power:
27 dBm
Package Type:
Surface Mount
Power(W):
0.5 W
Supply Voltage:
4.5 V
Package:
SOT-89
more info
Description:600 Watts - 50 Volts, 300 us, 10% Broad Band 1200 - 1400 MHz
Application Industry:
Aerospace & Defence, Wireless Infrastructure, Avio...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
1.2 to 1.4 GHz
Power:
57.78 dBm
Package Type:
Die
Power(W):
599.79 W
Supply Voltage:
50 V
Package:
55-KR
more info
Description:AlGaAs/InGaAs pHEMT for Military & Space Applications Up to 12 GHz
Application Industry:
Commercial, Military, Space, Wireless Infrastructu...
Transistor Type:
pHEMT
Technology:
AlGaAs/InGaAs
CW/Pulse:
CW
Frequency:
DC to 12 GHz
Power:
33 dBm
Package Type:
Chip
Power(W):
2 W
Supply Voltage:
2.5 to 8 V
more info

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