RF Transistors - Page 42

2357 RF Transistors from 26 Manufacturers meet your specification.
IE27330P Image
Description:GaN Power Transistor
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
2.62 to 2.69 GHz
Power:
55.19 dBm
Package Type:
Flanged
Power(W):
330.37 W
Gain:
15.4 dB
Supply Voltage:
48 V
Package:
NS-AS01
more info
Description:DC to 3.6 GHz, HEMT Transistor
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
DC to 3.6 GHz
Power:
49.78 dBm
Package Type:
Surface Mount
Power(W):
95.06 W
Gain:
25 dB
Supply Voltage:
48 V
more info
Description:Si Based TMOS Transistor
Application Industry:
Aerospace & Defence, Radar, ISM, Broadcast, Commer...
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
CW
Frequency:
5 to 500 MHz
Power:
50 dBm
Package Type:
Flanged
Power(W):
100 W
Gain:
8.8 dB
Supply Voltage:
28 V
Package:
Flange Ceramic
more info
Description:54.77 dBm (300 W), LDMOS Transistor from 1030 to 1090 MHz
Application Industry:
Aerospace & Defence, Avionics, Wireless Infrastruc...
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.03 to 1.09 GHz
Power:
54.77 dBm
Package Type:
Surface Mount
Power(W):
299.92 W
Supply Voltage:
32 V
Package:
SOT502A
more info
Description:HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.25µm x 800µm)
Application Industry:
Test & Measurement, Aerospace & Defence, Commercia...
Transistor Type:
pHEMT
Technology:
GaAs
CW/Pulse:
CW
Frequency:
DC to 26 GHz
Power:
30 dBm
Package Type:
Chip
Power(W):
1 W
Gain:
7.5 to 11.5 dB
Supply Voltage:
8 V
more info
MMRF1007HS Image
Description:Lateral N-Channel Broadband RF Power MOSFET, 965-1215 MHz, 1000 W, 50 V
Application Industry:
Aerospace & Defence, Commercial, Avionics
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
965 MHz to 1.215 GHz
Power:
50 dBm
Package Type:
Flanged
Power(W):
100 W
Supply Voltage:
50 V
Package:
NI--1230S--4S
more info
Description:175 to 530 MHz, MOSFET Transistor
Application Industry:
Wireless Infrastructure, Broadcast
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
CW
Frequency:
175 to 530 MHz
Power:
46.53 dBm
Package Type:
Flanged
Power(W):
44.98 W
Supply Voltage:
12.5 V
more info
Description:2.856 GHz, Bipolar Transistor
Application Industry:
ISM
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
2.856 GHz
Power:
48.13 to 49.64 dBm
Package Type:
Flanged
Power(W):
92.04 W
Gain:
10.9 dB
Supply Voltage:
40 V
Package:
Ceramic
more info
Description:GaAs FET from 5.3 to 5.9 GHz
Application Industry:
Communication, Wireless Infrastructure
Transistor Type:
FET
Technology:
GaAs
Frequency:
5.3 to 5.9 GHz
Power:
46 to 46.5 dBm
Package Type:
Flanged
Power(W):
39.81 to 44.67 W
Package:
IB
more info
Description:107 W, GaN HEMT Transistor from 3.5 to 3.6 GHz
Application Industry:
Wireless Infrastructure, Test & Measurement, Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
3.5 to 3.6 GHz
Power:
50.3 dBm
Package Type:
Flanged
Power(W):
107 W
Supply Voltage:
48 V
Package:
680B
more info
SD57030-01 Image
Description:30 W, LDMOS RF Transistor operating at 945 MHz
Application Industry:
Wireless Infrastructure, Commercial
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
945 MHz
Power:
44.77 dBm
Package Type:
Flanged
Power(W):
30 W
Supply Voltage:
28 V
more info

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