RF Transistors - Page 42

2360 RF Transistors from 26 Manufacturers meet your specification.
Description:GaN Power Transistor
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
DC to 6 GHz
Power:
41.46 dBm
Package Type:
Flanged
Power(W):
14 W
Gain:
18.5 dB
Supply Voltage:
48 V
Package:
DFN66726L-Q2
more info
Description:30 Watt GaN HEMT from 30 MHz to 4 GHz
Application Industry:
Wireless Infrastructure, Radar, Aerospace & Defenc...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
30 MHz to 4 GHz
Power:
44.77 dBm
Package Type:
Surface Mount
Power(W):
29.99 W
Gain:
19 dB
Supply Voltage:
32 V
Package:
4 x 3 mm
more info
Description:2.4 to 2.5 GHz, GaN on Si HEMT for RF Energy Application
Application Industry:
RF Energy
Transistor Type:
HEMT
Technology:
GaN on Si, GaN
CW/Pulse:
CW
Frequency:
2.4 to 2.5 GHz
Power:
50 dBm
Package Type:
Surface Mount
Power(W):
100 W
Gain:
17 dB
Supply Voltage:
50 V
Package:
TO-272S-2
more info
Description:DC to 6 GHz, GaN HEMT Transistor
Application Industry:
ISM, Wireless Infrastructure, Radar, Aerospace & D...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
DC to 6 GHz
Power:
40 dBm
Package Type:
Surface Mount
Power(W):
10 W
Supply Voltage:
50 V
Package:
SOT1227B
more info
Description:HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.25µm x 1600µm)
Application Industry:
Test & Measurement, Aerospace & Defence, Commercia...
Transistor Type:
pHEMT
Technology:
GaAs
CW/Pulse:
CW
Frequency:
DC to 26.5 GHz
Power:
31.5 dBm
Package Type:
Chip
Power(W):
1.41 W
Gain:
6 to 10 dB
Supply Voltage:
8 V
more info
MMRF1308H Image
Description:Lateral N-Channel Broadband RF Power MOSFET, 1.8-600 MHz, 600 W CW, 50 V
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Rada...
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
1.8 to 600 MHz
Power:
57.78 dBm
Package Type:
Flanged
Power(W):
599.79 W
Supply Voltage:
50 V
Package:
NI--1230H--4S
more info
Description:100 W GaN HEMT from 13.75 to 14.5 GHz
Application Industry:
SATCOM
Transistor Type:
HEMT
Technology:
GaN
CW/Pulse:
CW
Frequency:
13.75 to 14.5 GHz
Power:
49 to 50 dBm
Package Type:
Flanged
Power(W):
79.43 to 100 W
Supply Voltage:
27 V
Package:
GF-69
more info
Description:3600 W GaN on SiC Power Transistor from 1030 to 1090 MHz
Application Industry:
Avionics
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
1030 and 1090 MHz
Power:
65.56 dBm
Package Type:
Ceramic
Power(W):
3600 W
Gain:
18 to 22 dB
Supply Voltage:
100 V
more info
Description:GaAs FET from 1.96 GHz
Application Industry:
Wireless Infrastructure
Transistor Type:
FET
Technology:
GaAs
Frequency:
1.96 GHz
Power:
44.5 to 45.5 dBm
Package Type:
Flanged
Power(W):
28.18 to 35.48 W
Package:
IP
more info
Description:60 W, GaN HEMT Transistor from DC to 10 GHz
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
DC to 10 GHz
Power:
47.78 dBm
Package Type:
Flanged
Power(W):
59.98 W
Supply Voltage:
28 V
more info
RF3L05150CB4 Image
Description:150 W, LDMOS RF Transistor operating at 1000 MHz
Application Industry:
Avionics, Commercial, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1000 MHz
Power:
51.76 dBm
Package Type:
Flanged
Power(W):
150 W
Supply Voltage:
28 V / 32 V
more info

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