RF Transistors - Page 39

2360 RF Transistors from 26 Manufacturers meet your specification.
Description:GaN on SiC Transistor from 2.4 to 2.5 GHz
Application Industry:
ISM
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
2.4 to 2.5 GHz
Power:
53.77 to 54.05 dBm
Package Type:
Surface Mount
Power(W):
238.4 to 254.1 W
Gain:
13.1 to 13.8 dB
Supply Voltage:
52 Vdc
more info
Description:140 W MOSFET Power Transistor from 1200 to 1400 MHz
Application Industry:
Radar
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.2 to 1.4 GHz
Power:
51.46 dBm
Package Type:
Flanged
Power(W):
140 W
Gain:
20.5 dB
Supply Voltage:
50 V
more info
Description:195 W, GaN on SiC OptiGaN HEMT from 2580 to 2630 MHz for 4G LTE & Open RAN Applications
Application Industry:
Cellular, Wireless Infrastructure, Broadcast, Base...
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
2580 to 2630 MHz
Power:
45.05 dBm
Package Type:
Surface Mount, Flanged
Power(W):
32 W
Gain:
14.4 dB
Supply Voltage:
48 V
more info
Description:2.7 to 3.5 GHz, HEMT Transistor
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
2.7 to 3.5 GHz
Power:
34.77 dBm
Package Type:
Flanged
Power(W):
3 W
Gain:
12 dB
Supply Voltage:
32 V
Package:
Ceramic
more info
Description:GaN on SiC, GaN HEMT from 1.9 GHz
Application Industry:
Cellular, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
Frequency:
1.9 GHz
Power:
50 dBm
Package Type:
Flanged
Power(W):
100 W
Supply Voltage:
50 V
more info
Description:130 W, GaN HEMT Transistor from DC to 5 GHz
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
DC to 5 GHz
Power:
51.14 dBm
Package Type:
Die
Power(W):
130.02 W
Supply Voltage:
48 V
more info
PD84001 Image
Description:1.25 W, LDMOS RF Transistor from 800 to 920 MHz
Application Industry:
Broadcast, Commercial, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
800 to 920 MHz
Power:
30 to 31 dBm
Power(W):
1 to 1.25 W
Supply Voltage:
7.5 V
more info
WGB01006020F-LV Image
Description:20 W, GaN on SiC Power Transistor from 1 to 6 GHz
Application Industry:
Aerospace & Defence, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
1 to 6 GHz
Power:
43.01 dBm
Package Type:
Flanged
Power(W):
20 W
Supply Voltage:
28 V
more info
Description:Plastic Packaged GaAs Power FET
Application Industry:
Wireless Infrastructure
Transistor Type:
MESFET
Technology:
GaAs
CW/Pulse:
CW
Frequency:
DC to 6 GHz
Power:
22 dBm
Package Type:
Surface Mount, PCB Mount
Power(W):
0.16 W
Supply Voltage:
5 to 7 V
Package:
plastic
more info
Description:4 W, Si VDMOS Power Transistor
Application Industry:
Aerospace & Defence, Broadcast, Wireless Infrastru...
Transistor Type:
VDMOS
Technology:
Si
Frequency:
1 to 1000 MHz
Power:
36 dBm
Package Type:
Flanged
Power(W):
4 W
more info
Description:SC-70 (SOT-363) Low Noise High Freq PHEMT 5 dBm P1dB
Application Industry:
Wireless Infrastructure, Radar
Transistor Type:
pHEMT
Technology:
GaAs
CW/Pulse:
CW
Frequency:
1.5 to 18 GHz
Power:
5 dBm
Package Type:
Surface Mount
Power(W):
0.0031 W
Supply Voltage:
1.5 V
Package:
SOT-363
more info

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