RF Transistors - Page 40

2360 RF Transistors from 26 Manufacturers meet your specification.
IE21330D Image
Description:GaN Power Transistor
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
2.11 to 2.17 GHz
Power:
55.5 dBm
Package Type:
Flanged
Power(W):
354.81 W
Gain:
14.8 dB
Supply Voltage:
48 V
Package:
RF24001DKR3
more info
Description:Space Qualified GaAs FETs at 12 GHz
Application Industry:
Military, Space, Test & Measurement, Wireless Infr...
Transistor Type:
FET
Technology:
GaAs
CW/Pulse:
CW
Frequency:
12 GHz
Power:
20 dBm
Package Type:
Chip
Power(W):
0.1 W
Gain:
8 dB
more info
Description:0.5 Watts, 20 Volts, Class A Linear to 2000 MHz
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Broa...
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
CW
Frequency:
DC to 2 GHz
Power:
26.9 dBm
Package Type:
Flanged
Power(W):
0.49 W
Supply Voltage:
20 V
Package:
55EU-2
more info
Description:10 W CW/Pulsed GaN-on-SiC HEMT from DC to 6 GHz
Application Industry:
Aerospace & Defence, Test & Measurement, Military,...
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse, CW
Frequency:
DC to 6 GHz
Power:
40 dBm
Package Type:
Flanged
Power(W):
10 W
Gain:
17 dB
Supply Voltage:
28 V
more info
Description:25 W Surface-Mount LDMOS FET from 500 to 1400 MHz
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW, Pulse
Frequency:
500 to 1400 MHz
Power:
44 dBm
Package Type:
Surface Mount
Power(W):
25 W
Gain:
18.5 to 19.5 dB
Supply Voltage:
0 to 55 V
Package:
PG-SON-16
more info
Description:1.805 to 1.88 GHz, Power LDMOS transistor
Application Industry:
Wireless Infrastructure, RF Energy
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
1.805 to 1.88 GHz
Power:
56.02 dBm
Package Type:
Surface Mount
Power(W):
399.94 W
Supply Voltage:
32 V
Package:
SOT1258-7
more info
Description:HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.3 µm x 2400 µm)
Application Industry:
Test & Measurement, Aerospace & Defence, Commercia...
Transistor Type:
MESFET
Technology:
GaAs
CW/Pulse:
CW
Frequency:
DC to 26.5 GHz
Power:
30.8 dBm
Package Type:
Chip
Power(W):
1.2 W
Gain:
5.4 to 9.8 dB
Supply Voltage:
6 to 8 V
more info
A2G26H281-04S Image
Description:Airfast RF Power GaN Transistor, 2496-2690 MHz, 50 W Avg., 48 V
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
2.49 to 2.69 GHz
Power:
46.99 dBm
Package Type:
Flanged
Power(W):
50 W
Supply Voltage:
48 V
Package:
NI--780S--4L
more info
Description:13.75 to 14.5 GHz, HEMT Transistor
Application Industry:
SATCOM
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
13.75 to 14.5 GHz
Power:
49.03 dBm
Package Type:
Flanged
Power(W):
79.98 W
Supply Voltage:
24 V
more info
Description:1 KW RF Pallet Amplifier 960 to 1215 MHz
Application Industry:
Aerospace & Defence
Transistor Type:
FET
CW/Pulse:
Pulse
Frequency:
960 MHz to 1.215 GHz
Power:
59.78 to 60.41 dBm
Package Type:
PCB Mount
Power(W):
1099.01 W
Supply Voltage:
50 V
more info
Description:630 W, GaN on SiC OptiGaN HEMT from 758 to 960 MHz for 4G LTE & Open RAN Applications
Application Industry:
Cellular, Wireless Infrastructure, Broadcast, Base...
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
758 to 960 MHz
Power:
50.29 dBm
Package Type:
Surface Mount, Flanged
Power(W):
107 W
Gain:
17 dB
Supply Voltage:
48 V
more info

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