RF Transistors - Page 46

2360 RF Transistors from 26 Manufacturers meet your specification.
Description:GaN Power Transistor
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
1.88 to 2.025 GHz
Power:
52.9 dBm
Package Type:
Flanged
Power(W):
194.98 W
Gain:
16.9 dB
Supply Voltage:
48 V
Package:
RF12001DKR3
more info
Description:1030 to 1090 MHz, 9.8 dB Bipolar Transistor
Application Industry:
Aerospace & Defence, Avionics
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.03 to 1.09 GHz
Power:
61.14 dBm
Package Type:
Flanged
Power(W):
1300.17 W
Gain:
9.8 dB
Supply Voltage:
60 V
Package:
Ceramic
more info
Description:GaN on SiC, GaN HEMT from 2.6 GHz
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
Frequency:
2.6 GHz
Power:
49.5 dBm
Package Type:
Flanged
Power(W):
89.13 W
Supply Voltage:
50 V
more info
Description:75 W, GaN HEMT Transistor from DC to 8 GHz
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
DC to 8 GHz
Power:
48.75 dBm
Package Type:
Die
Power(W):
74.99 W
Supply Voltage:
48 V
more info
PD54008L-E Image
Description:8 W, LDMOS RF Transistor from 480 to 520 MHz
Application Industry:
Broadcast, Commercial, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
480 to 520 MHz
Power:
39.03 dBm
Package Type:
Surface Mount
Power(W):
8 W
Supply Voltage:
7.5 V
more info
WG60028DD Image
Description:28 W, GaN on SiC Power Transistor from DC to 6 GHz
Application Industry:
Aerospace & Defence, Broadcast, Wireless Infrastru...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
DC to 6 GHz
Power:
44.47 dBm
Package Type:
Surface Mount
Power(W):
27.99 W
Supply Voltage:
50 V
more info
Description:HiFET High Voltage GaAs FET
Application Industry:
Wireless Infrastructure, Avionics
Transistor Type:
FET
Technology:
GaAs
CW/Pulse:
CW
Frequency:
DC to 6 GHz
Power:
36 dBm
Package Type:
Flanged
Power(W):
3.98 W
Supply Voltage:
28 to 32 V
Package:
Ceramic
more info
Description:4 W, Si VDMOS Power Transistor
Application Industry:
Aerospace & Defence, Broadcast, Wireless Infrastru...
Transistor Type:
VDMOS
Technology:
GaN on SiC, GaN
Frequency:
1 to 1000 MHz
Power:
36 dBm
Package Type:
Surface Mount
Power(W):
4 W
more info
Description:RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Broa...
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
CW
Frequency:
DC to 30 MHz
Power:
53.42 dBm
Package Type:
2-Hole Flanged
Power(W):
219.79 W
Supply Voltage:
28 V
Package:
M174
more info
Description:DC to 3.2 GHz, 51 dBm Gan Transistor
Application Industry:
Wireless Infrastructure, Radar, Aerospace & Defenc...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
DC to 3.2 GHz
Power:
50.97 dBm
Package Type:
Flanged
Power(W):
125.03 W
Gain:
17.5 dB
Supply Voltage:
12 to 55 V
more info
Description:300 W, GaN on SiC HEMT from 2110 to 2200 MHz
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
2.11 to 2.2 GHz
Power:
47.5 dBm (Avg), 54.77 dBm (P3dB)
Package Type:
Earless Flanged
Power(W):
56.2 W (Avg), 300 W (P3dB)
Gain:
17.5 to 19 dB
Supply Voltage:
0 to 50 V
Package:
H-87265J-2
more info

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