RF Transistors - Page 65

2357 RF Transistors from 26 Manufacturers meet your specification.
Description:GaN Power Transistor
Application Industry:
Wireless Infrastructure, Wireless Communication, A...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
3.48 to 3.52 GHz
Power:
53.4 dBm
Package Type:
Flanged
Power(W):
218.78 W
Gain:
14.7 dB
Supply Voltage:
48 V
Package:
RF12002KR3
more info
Description:DC to 12 GHz, HEMT Transistor
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Broa...
Transistor Type:
HEMT
Technology:
InGaAs
CW/Pulse:
CW
Frequency:
DC to 12 GHz
Package Type:
Flanged
Gain:
12 to 13.5 dB
Supply Voltage:
2 V
more info
Description:GaN Power Transistor
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
3.4 to 3.6 GHz
Power:
50.41 dBm
Package Type:
Flanged
Power(W):
109.9 W
Gain:
17.1 dB
Supply Voltage:
48 V
Package:
RF12001KR3
more info
Description:870 to 990 MHz, 7.6 dB Bipolar Transistor
Application Industry:
Radar
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
870 to 990 MHz
Power:
40.79 dBm
Package Type:
Flanged
Power(W):
11.99 W
Gain:
7.6 dB
Supply Voltage:
36 V
Package:
Ceramic
more info
Description:GaAs FET from 8.5 GHz
Transistor Type:
FET
Technology:
GaAs
Frequency:
8.5 GHz
Power:
32.5 to 34 dBm
Package Type:
Flanged
Power(W):
1.78 to 2.51 W
Package:
MH
more info
Description:2.6 W, GaN HEMT Transistor from DC to 5 GHz
Application Industry:
Wireless Infrastructure, Test & Measurement, Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
DC to 5 GHz
Power:
34.15 dBm
Package Type:
Flanged
Power(W):
2.6 W
Supply Voltage:
48 V
more info
Description:180 W, LDMOS RF Transistor from 1.3 to 1.7 GHz
Application Industry:
ISM, Radar, SATCOM, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW, Pulse
Frequency:
1.3 to 1.7 GHz
Power:
52.553 dBm
Package Type:
Flanged
Power(W):
180 W
Supply Voltage:
28 V
more info
Description:Ceramic Package GaAs Power pHEMT DC-8GHz
Application Industry:
Wireless Infrastructure, Radar, Broadcast
Transistor Type:
pHEMT
Technology:
GaAs
CW/Pulse:
CW
Frequency:
DC to 6 GHz
Power:
38 dBm
Package Type:
Flanged
Power(W):
6.31 W
Supply Voltage:
28 V
Package:
Ceramic
more info
Description:90 W, Si VDMOS Power Transistor
Application Industry:
Aerospace & Defence, Broadcast, Wireless Infrastru...
Transistor Type:
VDMOS
Technology:
Si
Frequency:
1 to 500 MHz
Power:
49 dBm
Package Type:
Flanged
Power(W):
90 W
more info
Description:120 W DME/L-Band Radar Driver GaN Power Transistor
Application Industry:
Aerospace & Defence, Radar, Avionics
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
1.4 to 1.6 GHz
Power:
50.79 to 51.14 dBm
Package Type:
Die
Power(W):
130.02 W
Supply Voltage:
50 V
Package:
55-78030
more info
Description:2.7 to 3.5 GHz, HEMT Transistor
Application Industry:
Radar, Aerospace & Defence, Test & Measurement, Wi...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
2.7 to 3.5 GHz
Power:
44.77 dBm
Package Type:
Surface Mount
Power(W):
29.99 W
Gain:
18.4 dB
Supply Voltage:
32 to 55 V
Package:
6 x 5 mm
more info

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