RF Transistors - Page 66

2360 RF Transistors from 26 Manufacturers meet your specification.
Description:347 W GaN Power Transistor from 2.3 to 2.5 GHz
Application Industry:
ISM
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse
Frequency:
2300 to 2500 MHz
Power:
55.21 to 55.35 dBm
Package Type:
Flanged
Power(W):
332 to 343 W
Gain:
13.5 to 13.6 dB
Supply Voltage:
48 V
more info
Description:450 W GaN-on-SiC HEMT from 758 to 960 MHz
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse
Frequency:
758 to 960 MHz
Power:
59.54 dBm
Package Type:
Earless Flanged
Power(W):
900 W (P4)
Gain:
18 dB
Supply Voltage:
48 V
more info
Description:56.02 dBm (400 W), LDMOS Transistor from 1805 to 1995 MHz
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
1.805 to 1.995 GHz
Power:
56.02 dBm
Package Type:
Surface Mount
Power(W):
399.94 W
Supply Voltage:
28 V
Package:
SOT1242C
more info
MRF8VP13350N Image
Description:RF POWER LDMOS TRANSISTOR 700-1300 MHz, 350 W CW, 50 V
Application Industry:
ISM, Broadcast
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
700 MHz to 1.3 GHz
Power:
55.5 dBm
Package Type:
Flanged
Power(W):
354.81 W
Supply Voltage:
50 V
Package:
OM--780--4L PLASTIC
more info
Description:30 W GaN HEMT from 13.75 to 14.5 GHz for SATCOM Applications
Application Industry:
SATCOM, RF Energy
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
Frequency:
13.75 to 14.50 GHz
Power:
45.3 dBm
Package Type:
Flanged
Power(W):
33.88 W
Gain:
8.5 to 9.5 dB
Supply Voltage:
24 V
more info
Description:GaN Power Transistor
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
1.805 to 1.88 GHz
Power:
55.18 dBm
Package Type:
Flanged
Power(W):
329.61 W
Gain:
15.5 dB
Supply Voltage:
48 V
Package:
RF24001DKR3
more info
Description:870 to 990 MHz, 8.1 dB Bipolar Transistor
Application Industry:
Radar
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
870 to 990 MHz
Power:
53.22 dBm
Package Type:
Flanged
Power(W):
209.89 W
Gain:
8.1 dB
Supply Voltage:
36 V
Package:
Ceramic
more info
Description:GaAs HEMT from 12 GHz
Application Industry:
SATCOM, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaAs
Frequency:
12 GHz
Package Type:
Surface Mount
Gain:
11 to 13 dB
Supply Voltage:
2 V
Package:
LG
more info
Description:57 W, GaN HEMT Transistor from DC to 5 GHz
Application Industry:
Wireless Infrastructure, Test & Measurement, Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
DC to 5 GHz
Power:
47.56 dBm
Package Type:
Flanged
Power(W):
57.02 W
Supply Voltage:
28 V
more info
PD57060S-E Image
Description:60 W, LDMOS / MOSFET RF Transistor from 890 to 960 MHz
Application Industry:
Wireless Infrastructure, Commercial
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
890 to 960 MHz
Power:
47.78 dBm
Package Type:
Surface Mount
Power(W):
60 W
Supply Voltage:
28 V
more info
Description:Ceramic Package GaN AM060WX-BI-R Power HEMT DC-6GHz
Application Industry:
Wireless Infrastructure, Radar, Broadcast
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
DC to 6 GHz
Power:
45 to 46 dBm (P5dB)
Package Type:
Flanged
Power(W):
31.62 W
Supply Voltage:
28 V
Package:
Ceramic
more info

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