RF Transistors - Page 66

2357 RF Transistors from 26 Manufacturers meet your specification.
Description:GaN Power Transistor
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
1.805 to 1.88 GHz
Power:
52.17 dBm
Package Type:
Flanged
Power(W):
164.82 W
Gain:
18.3 dB
Supply Voltage:
48 V
Package:
NS-AS01
more info
Description:170 W GaN on SiC HEMT from 2620 to 2690 MHz
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
2.62 to 2.69 GHz
Power:
52.3 dBm (P3dB), 52.55 dBm (CW)
Package Type:
Earless Flanged
Power(W):
170 W (P3dB), 180 W (CW)
Gain:
15 to 16.8 dB
Supply Voltage:
0 to 50 V
more info
Description:20 W LDMOS Power Transistor from 10 MHz to 2700 MHz
Application Industry:
Radar, Avionics, Broadcast, Communication, Wireles...
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
400 to 2700 MHz
Power:
43 dBm
Package Type:
Flanged
Power(W):
20 W
Supply Voltage:
28 V
more info
AFT09H310-04GS Image
Description:Airfast RF Power LDMOS Transistor, 920-960 MHz, 56 W Avg., 28 V
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
920 to 960 MHz
Power:
47.48 dBm
Package Type:
Flanged
Power(W):
55.98 W
Supply Voltage:
28 V
Package:
NI-1230S-4S
more info
Description:DC to 12 GHz, HEMT Transistor
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Broa...
Transistor Type:
HEMT
Technology:
InGaAs
CW/Pulse:
CW
Frequency:
DC to 12 GHz
Package Type:
Flanged
Gain:
11.5 to 13 dB
Supply Voltage:
2 V
more info
Description:GaN Power Transistor
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
1.88 to 2.025 GHz
Power:
52.9 dBm
Package Type:
Flanged
Power(W):
194.98 W
Gain:
16.9 dB
Supply Voltage:
48 V
Package:
RF12001DKR3
more info
Description:1200 to 1400 MHz, 12.5 dB LDMOS Transistor
Application Industry:
Radar
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.2 to 1.4 GHz
Power:
53.98 dBm
Package Type:
Flanged
Power(W):
250.03 W
Gain:
12.5 dB
Supply Voltage:
30 V
Package:
Ceramic
more info
Description:GaAs FET from 8 GHz
Transistor Type:
FET
Technology:
GaAs
Frequency:
8 GHz
Power:
27.5 to 28.5 dBm
Package Type:
Chip
Power(W):
0.56 to 0.71 W
more info
Description:, GaN HEMT Transistor from 1.03 to 1.09 GHz
Application Industry:
Test & Measurement, Radar, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
1.03 to 1.09 GHz
Package Type:
Flanged
Gain:
19 dB
Supply Voltage:
48 V
Package:
680B
more info
PD84006L-E Image
Description:6 W, LDMOS RF Transistor from 740 to 950 MHz
Application Industry:
Broadcast, Commercial, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
740 to 950 MHz
Power:
37.78 dBm
Power(W):
5 to 6 W
Supply Voltage:
7.5 to 9.5 V
more info
Description:Plastic Packaged GaAs Power FET
Application Industry:
Wireless Infrastructure
Transistor Type:
MESFET
Technology:
GaAs
CW/Pulse:
CW
Frequency:
DC to 6 GHz
Power:
28 dBm
Package Type:
Surface Mount, PCB Mount
Power(W):
0.63 W
Supply Voltage:
5 to 7 V
Package:
plastic
more info

FiltersReset All

Application Industry

Transistor Type

Technology

CW/Pulse

Frequency

 
 
Apply

Power (dBm)

Apply

Power(W)

Apply

Gain (dB)

Apply

Supply Voltage (V)

Apply

Package Type