RF Transistors - Page 61

2357 RF Transistors from 26 Manufacturers meet your specification.
IE36170WD Image
Description:GaN Power Transistor
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
3.52 to 3.56 GHz
Power:
52.3 dBm
Package Type:
Flanged
Power(W):
169.82 W
Gain:
14.6 dB
Supply Voltage:
48 V
Package:
RF12001DKR3
more info
A2G35S160-01S Image
Description:Airfast RF Power GaN Transistor, 3400-3800 MHz, 32 W AVG., 48 V
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
3.4 to 3.6 GHz
Power:
45.05 dBm
Package Type:
Flanged
Power(W):
31.99 W
Supply Voltage:
48 V
Package:
NI--400S--2S
more info
Description:DC to 12 GHz, HEMT Transistor
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Broa...
Transistor Type:
HEMT
Technology:
InGaAs
CW/Pulse:
CW
Frequency:
DC to 12 GHz
Package Type:
Flanged
Gain:
11 to 12 dB
Supply Voltage:
2 V
more info
Description:GaN Power Transistor
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
2.11 to 2.17 GHz
Power:
49.29 dBm
Package Type:
Flanged
Power(W):
84.92 W
Gain:
20.7 dB
Supply Voltage:
48 V
Package:
NS-AS01
more info
Description:3100 to 3400 MHz, 8.2 dB Bipolar Transistor
Application Industry:
Radar
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
3.1 to 3.4 GHz
Power:
48.45 dBm
Package Type:
Flanged
Power(W):
69.98 W
Gain:
8.2 dB
Supply Voltage:
36 V
Package:
Ceramic
more info
Description:GaN on SiC, GaN HEMT from 3 to 3.5 GHz
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
3 to 3.5 GHz
Power:
51.8 to 52.8 dBm
Package Type:
Flanged
Power(W):
151.36 to 190.55 W
Supply Voltage:
50 V
more info
Description:350 W, GaN HEMT Transistor from DC to 3.5 GHz
Application Industry:
Wireless Infrastructure, Test & Measurement, Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
DC to 3.5 GHz
Power:
55.44 dBm
Package Type:
Flanged
Power(W):
350 W
Supply Voltage:
48 V
more info
Description:20 W, LDMOS RF Transistor from 700 MHz to 3.6 GHz
Application Industry:
ISM, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
700 MHz to 3.6 GHz
Power:
43.01 dBm
Package Type:
Flanged
Power(W):
20 W
Supply Voltage:
28 V
more info
WGB01006020F-LV Image
Description:20 W, GaN on SiC Power Transistor from 1 to 6 GHz
Application Industry:
Aerospace & Defence, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
1 to 6 GHz
Power:
43.01 dBm
Package Type:
Flanged
Power(W):
20 W
Supply Voltage:
28 V
more info
Description:High Power Rev 7 GaAs Power FET
Application Industry:
Wireless Infrastructure
Transistor Type:
MESFET
Technology:
GaAs
CW/Pulse:
CW
Frequency:
DC to 6 GHz
Power:
39.5 dBm
Package Type:
Flanged
Power(W):
8.91 W
Supply Voltage:
7 V
Package:
Ceramic
more info
Description:300 W, Si VDMOS Power Transistor
Application Industry:
Aerospace & Defence, Broadcast, Wireless Infrastru...
Transistor Type:
VDMOS
Technology:
Si
Frequency:
1 to 175 MHz
Power:
54 dBm
Package Type:
Flanged
Power(W):
300 W
more info

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