RF Transistors - Page 61

2360 RF Transistors from 26 Manufacturers meet your specification.
ID38461DR Image
Description:56 W GaN-on-SiC HEMT from 3700 to 3980 MHz
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on SiC
Frequency:
3.7 to 3.98 GHz
Power:
47.5 dBm
Package Type:
Flanged
Power(W):
56.2 W
Gain:
14.5 dB
Supply Voltage:
48 V
more info
MRF8P29300H Image
Description:Lateral N-Channel Broadband RF Power MOSFET, 2700-2900 MHz, 320 W, 30 V
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Rada...
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
2.7 to 2.9 GHz
Power:
54.19 dBm
Package Type:
Flanged
Power(W):
262.42 W
Supply Voltage:
30 V
Package:
CASE 375D--05, STYLE 1 NI--1230
more info
Description:175 to 520 MHz, MOSFET Transistor
Application Industry:
Wireless Infrastructure, Broadcast
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
CW
Frequency:
175 to 520 MHz
Power:
38.45 to 39.03 dBm
Package Type:
Flanged
Power(W):
8 W
Gain:
10 dB
Supply Voltage:
7.2 V
more info
Description:GaN Power Transistor
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
1.805 to 1.88 GHz
Power:
53.97 dBm
Package Type:
Flanged
Power(W):
249.46 W
Gain:
16.7 dB
Supply Voltage:
48 V
Package:
RF24001DKR3
more info
Description:2700 to 3100 MHz, 10.7 dB LDMOS Transistor
Application Industry:
Radar
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
2.7 to 3.1 GHz
Power:
47.78 to 50 dBm
Package Type:
Flanged
Power(W):
100 W
Gain:
10.7 dB
Supply Voltage:
32 V
Package:
Ceramic
more info
Description:GaAs FET from 7.7 to 8.5 GHz
Application Industry:
Communication, Wireless Infrastructure
Transistor Type:
FET
Technology:
GaAs
Frequency:
7.7 to 8.5 GHz
Power:
41.5 to 42.5 dBm
Package Type:
Flanged
Power(W):
14.13 to 17.78 W
Supply Voltage:
10 V
Package:
IA
more info
Description:103 W, GaN HEMT Transistor from DC to 5 GHz
Application Industry:
Wireless Infrastructure, Test & Measurement, Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
DC to 5 GHz
Power:
50.13 dBm
Package Type:
Flanged
Power(W):
103.04 W
Supply Voltage:
48 V
more info
Description:120 W, LDMOS RF Transistor from 1 to 1.5 GHz
Application Industry:
Avionics, Broadcast, Commercial, Wireless Infrastr...
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW, Pulse
Frequency:
1 to 1.5 GHz
Power:
50.792 dBm
Package Type:
Flanged
Power(W):
120 W
Supply Voltage:
50 V
more info
WG40120S Image
Description:120W GaN power transistor for Infrastructure applications at frequencies from DC to 4000 MHz
Application Industry:
Aerospace & Defence, Wireless Infrastructure, Broa...
Transistor Type:
FET
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
DC to 4 GHz
Power:
50.79 dBm
Package Type:
Flanged
Power(W):
119.95 W
Supply Voltage:
28 V
Package:
Flanged
more info
Description:HiFET High Voltage GaAs FET DC-12 GHz
Application Industry:
Wireless Infrastructure, Radar, Broadcast
Transistor Type:
FET
Technology:
GaAs
CW/Pulse:
CW
Frequency:
DC to 12 GHz
Power:
26 dBm
Package Type:
Flanged
Power(W):
0.4 W
Supply Voltage:
28 V
Package:
Ceramic
more info
Description:25 W, Si VDMOS Power Transistor
Application Industry:
Aerospace & Defence, Broadcast, Wireless Infrastru...
Transistor Type:
VDMOS
Technology:
Si
Frequency:
1 to 175 MHz
Power:
43 dBm
Package Type:
Flanged
Power(W):
25 W
more info

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