RF Transistors - Page 64

2360 RF Transistors from 26 Manufacturers meet your specification.
Description:GaN Power Transistor
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
2.11 to 2.17 GHz
Power:
50.41 dBm
Package Type:
Flanged
Power(W):
109.9 W
Gain:
18.4 dB
Supply Voltage:
48 V
Package:
NS-AS01
more info
Description:GaAs FET from 14.5 GHz
Transistor Type:
FET
Technology:
GaAs
Frequency:
14.5 GHz
Power:
23 to 24 dBm
Package Type:
Flanged
Power(W):
0.2 to 0.25 W
Package:
WG
more info
Description:280 W GaN HEMT from 1.03 to 1.09 GHz
Application Industry:
Radar, Test & Measurement, SATCOM, Wireless Infras...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
1.03 to 1.09 GHz
Power:
54.53 dBm
Package Type:
Flanged
Power(W):
283.79 W
Gain:
17.53 dB
Supply Voltage:
48 V
more info
PD55015-E Image
Description:15 W, LDMOS / MOSFET RF Transistor from 480 to 520 MHz
Application Industry:
Broadcast, Commercial, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
480 to 520 MHz
Power:
41.76 dBm
Package Type:
Surface Mount
Power(W):
15 W
Supply Voltage:
12.5 to 15.5 V
more info
Description:Ceramic Package GaN AM060WX-BI-R Power HEMT DC-6GHz
Application Industry:
Wireless Infrastructure, Radar, ISM, Commercial
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
DC to 6 GHz
Power:
42 to 43 dBm (P5dB)
Package Type:
Flanged
Power(W):
15.85 W
Supply Voltage:
28 Vdc
Package:
Ceramic
more info
Description:45 W, Si VDMOS Power Transistor
Application Industry:
Aerospace & Defence, Broadcast, Wireless Infrastru...
Transistor Type:
VDMOS
Technology:
Si
Frequency:
1 to 500 MHz
Power:
46 dBm
Package Type:
Flanged
Power(W):
45 W
more info
Description:RF & MICROWAVE TRANSISTORS TV LINEAR APPLICATIONS
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Broa...
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
CW
Frequency:
470 to 860 MHz
Power:
41.46 dBm
Package Type:
Flanged
Power(W):
14 W
Supply Voltage:
25 V
Package:
M156
more info
Description:30 MHz to 3.5 GHz GaN Transistor for CW and Pulse Applications
Application Industry:
Wireless Infrastructure, Radar, Aerospace & Defenc...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
30 MHz to 3.5 GHz
Power:
36.99 dBm
Package Type:
Surface Mount
Power(W):
5 W
Gain:
15.7 dB
Supply Voltage:
32 V
more info
Description:900 MHz to 1.4 GHz, GaN on Si HEMT for Aerospace & Defence Application
Application Industry:
Aerospace & Defence
Transistor Type:
HEMT
Technology:
GaN on Si, GaN
CW/Pulse:
CW
Frequency:
900 MHz to 1.4 GHz
Power:
58.13 dBm
Package Type:
Surface Mount
Power(W):
650.13 W
Gain:
16.5 dB
Supply Voltage:
50 V
Package:
AC-780B-2/AC-780S-2
more info
Description:A 250 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band.
Application Industry:
ISM, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
10 to 600 MHz
Power:
53.71 to 53.98 dBm
Package Type:
Surface Mount
Power(W):
250.03 W
Supply Voltage:
50 V
Package:
SOT1121B
more info
MRF8P29300HS Image
Description:Lateral N-Channel Broadband RF Power MOSFET, 2700-2900 MHz, 320 W, 30 V
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Rada...
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
2.7 to 2.9 GHz
Power:
54.19 dBm
Package Type:
Flanged
Power(W):
262.42 W
Supply Voltage:
30 V
Package:
CASE 375E--04, STYLE 1 NI--1230S
more info

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