RF Transistors - Page 68

2357 RF Transistors from 26 Manufacturers meet your specification.
Description:GaN Power Transistor
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
1.805 to 1.88 GHz
Power:
49.29 dBm
Package Type:
Flanged
Power(W):
84.92 W
Gain:
18.9 dB
Supply Voltage:
48 V
Package:
RF12002KR3
more info
Description:158 W, GaN HEMT Transistor from DC to 5 GHz
Application Industry:
Wireless Infrastructure, Test & Measurement, Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
DC to 5 GHz
Power:
51.99 dBm
Package Type:
Flanged
Power(W):
158.12 W
Gain:
8.7 dB
Supply Voltage:
48 V
more info
Description:10 W, LDMOS RF Transistor from 930 MHz to 1.6 GHz
Application Industry:
Avionics, ISM, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW, Pulse
Frequency:
930 MHz to 1.6 GHz
Power:
40 dBm
Package Type:
Flanged
Power(W):
10 W
Supply Voltage:
28 V
more info
Description:Ceramic Package GaN AM060WX-BI-R Power HEMT DC-10GHz
Application Industry:
Wireless Infrastructure, Radar, Broadcast
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
DC to 10 GHz
Power:
36 to 37 dBm (P5dB)
Package Type:
Flanged
Power(W):
3.98 W
Supply Voltage:
28 V
Package:
Ceramic
more info
Description:90 W, Si VDMOS Power Transistor
Application Industry:
Aerospace & Defence, Broadcast, Wireless Infrastru...
Transistor Type:
VDMOS
Technology:
Si
Frequency:
1 to 500 MHz
Power:
49 dBm
Package Type:
Flanged
Power(W):
90 W
more info
Description:RF POWER VERTICAL MOSFET
Application Industry:
Aerospace & Defence, Commercial
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
Pulse
Frequency:
DC to 150 MHz
Power:
56.02 dBm
Package Type:
Flanged
Power(W):
399.94 W
Supply Voltage:
50 V
Package:
M177
more info
Description:45W, 32V DC to 3.5 GHz, Earless GaN RF Power Transistor
Application Industry:
Wireless Infrastructure, Radar, Aerospace & Defenc...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
DC to 3.5 GHz
Power:
46.53 dBm
Package Type:
Flanged
Power(W):
44.98 W
Gain:
19 dB
Supply Voltage:
32 V
more info
Description:30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
3.3 to 3.9 GHz
Power:
36.02 dBm
Package Type:
Flanged
Power(W):
4 W
Supply Voltage:
50 V
more info
Description:250 W LDMOS Power Transistor for Avionics Applications
Application Industry:
Avionics, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
960 to 1215 MHz
Power:
53.97 dBm
Package Type:
Flanged
Power(W):
250 W
Gain:
22 dB
Supply Voltage:
50 V
more info
MRF8S9202NR3 Image
Description:Single W-CDMA Lateral N-Channel RF Power MOSFET, 920-960 MHz, 58 W Avg., 28 V
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
920 to 960 MHz
Power:
47.63 dBm
Package Type:
Flanged
Power(W):
57.94 W
Supply Voltage:
28 V
Package:
CASE 2021--03, STYLE 1 OM--780--2 PLASTIC
more info
Description:DC to 941 MHz, MOSFET Transistor
Application Industry:
Wireless Infrastructure, Broadcast
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
CW
Frequency:
DC to 941 MHz
Power:
37.4 to 37.78 dBm
Package Type:
Flanged
Power(W):
6 W
Gain:
8.9 dB
Supply Voltage:
7.2 V
more info

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