RF Transistors - Page 70

2357 RF Transistors from 26 Manufacturers meet your specification.
Description:410 W Doherty GaN-on-SiC HEMT from 3700 to 4100 MHz
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC
Frequency:
3.7 to 4.1 GHz
Power:
52.2 dBm
Package Type:
Flanged
Power(W):
410 W
Gain:
14.2 dB
Supply Voltage:
48 V
more info
Description:2000 W LDMOS Power Transistor for the 400 MHz ISM Band
Application Industry:
Radar, Aerospace & Defence, Broadcast, Wireless In...
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW, Pulse
Frequency:
1 to 400 MHz
Power:
60.97 to 63.22 dBm
Package Type:
Ceramic, 2-Hole Flanged
Power(W):
1250 to 2100 W
Supply Voltage:
30 to 65 V
more info
MMRF1004N Image
Description:GSM/GSM EDGE, SINGLE N-CDMA, 2 x W-CDMA Lateral N-Channel RF Power MOSFET, 1600-2200 MHz, 10 W, 28
Application Industry:
Aerospace & Defence, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
1.6 to 2.2 GHz
Power:
40 dBm
Package Type:
Flanged
Power(W):
10 W
Supply Voltage:
28 V
Package:
TO--270--2 PLASTIC
more info
Description:DC to 30 MHz, MOSFET Transistor
Application Industry:
Wireless Infrastructure, Broadcast
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
CW
Frequency:
DC to 30 MHz
Power:
50 to 50.41 dBm
Package Type:
Flanged
Power(W):
109.9 W
Gain:
11.5 dB
Supply Voltage:
12.5 V
more info
IE27220PE Image
Description:GaN Power Transistor
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
2.62 to 2.69 GHz
Power:
53.4 dBm
Package Type:
Flanged
Power(W):
218.78 W
Gain:
17 dB
Supply Voltage:
48 V
Package:
NS-AS01
more info
Description:960 to 1215 MHz, 14.2 dB LDMOS Transistor
Application Industry:
Aerospace & Defence, Avionics
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
960 MHz to 1.215 GHz
Power:
41.76 to 44.27 dBm
Package Type:
Flanged
Power(W):
26.73 W
Gain:
14.2 dB
Supply Voltage:
50 V
Package:
Ceramic
more info
Description:GaAs FET from 9.5 to 10.5 GHz
Application Industry:
Radar, Communication, Wireless Infrastructure
Transistor Type:
FET
Technology:
GaAs
Frequency:
9.5 to 10.5 GHz
Power:
39.5 to 40.5 dBm
Package Type:
Flanged
Power(W):
8.91 to 11.22 W
Supply Voltage:
10 V
more info
Description:60 W, GaN HEMT Transistor from DC to 10 GHz
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
DC to 10 GHz
Power:
47.78 dBm
Package Type:
Die
Power(W):
59.98 W
Supply Voltage:
28 V
more info
Description:80 W, LDMOS RF Transistor from 1.3 to 1.7 GHz
Application Industry:
SATCOM, ISM, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW, Pulse
Frequency:
1.3 to 1.7 GHz
Power:
49.031 dBm
Package Type:
Flanged
Power(W):
80 W
Supply Voltage:
28 V
more info
Description:High Power Rev 7 GaAs Power FET
Application Industry:
Wireless Infrastructure
Transistor Type:
MESFET
Technology:
GaAs
CW/Pulse:
CW
Frequency:
DC to 6 GHz
Power:
36.5 dBm
Package Type:
Flanged
Power(W):
4.47 W
Supply Voltage:
7 V
Package:
Ceramic
more info
Description:60 W, Si VDMOS Power Transistor
Application Industry:
Aerospace & Defence, Broadcast, Wireless Infrastru...
Transistor Type:
VDMOS
Technology:
Si
Frequency:
1 to 175 MHz
Power:
47 dBm
Package Type:
Flanged
Power(W):
60 W
more info

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