RF Transistors - Page 67

2357 RF Transistors from 26 Manufacturers meet your specification.
Description:GaN Power Transistor
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
1.805 to 1.88 GHz
Power:
53.4 dBm
Package Type:
Flanged
Power(W):
218.78 W
Gain:
18.1 dB
Supply Voltage:
48 V
Package:
NS-AS01
more info
Description:110 W, Si VDMOS Power Transistor
Application Industry:
Aerospace & Defence, Broadcast, Wireless Infrastru...
Transistor Type:
VDMOS
Technology:
Si
Frequency:
1 to 500 MHz
Power:
50 dBm
Package Type:
Flanged
Power(W):
110 W
more info
Description:30 Watts, 28 Volts, Pulsed Radar 1200 - 1400 MHz
Application Industry:
Radar
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.2 to 1.4 GHz
Power:
44.77 dBm
Package Type:
Flanged
Power(W):
29.99 W
Supply Voltage:
28 V
Package:
55AW-1
more info
Description:6 W GaN Transistor from 2.5 to 5 GHz
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN, GaN on SiC
Frequency:
2500 to 5000 MHz
Power:
37.78 dBm
Package Type:
Surface Mount
Power(W):
6 W
Gain:
18.6 dB
Supply Voltage:
48 V
Package:
DFN
more info
Description:1000 W LDMOS Transistor from 1030 to 1090 MHz
Application Industry:
Radar
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1030 MHz / 1090 MHz
Power:
59.64 to 60.04 dBm (P1dB), 60.21 to 60.53 dBm (P3d...
Package Type:
Flanged
Power(W):
920 to 1010 W (P1dB), 1050 to 1130 W (P3dB)
Gain:
17 to 21 dB
Supply Voltage:
50 V
Package:
H-36275-4
more info
Description:57.78 dBm (600 W), LDMOS Transistor from 400 to 1000 MHz
Application Industry:
Broadcast, ISM, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
400 MHz to 1 GHz
Power:
57.78 dBm
Package Type:
Surface Mount
Power(W):
599.79 W
Supply Voltage:
50 V
Package:
SOT539B
more info
MMRF1320GN Image
Description:WIDEBAND RF POWER LDMOS TRANSISTORS, 1.8--600 MHz, 150 W CW, 50 V
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Rada...
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
1.8 to 600 MHz
Power:
51.76 dBm
Package Type:
Flanged
Power(W):
149.97 W
Supply Voltage:
50 V
Package:
TO--270WBG--4 PLASTIC
more info
Description:70W GaN HEMT for Satellite Earth Stations
Application Industry:
SATCOM
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
Frequency:
13.75 to 14.5 GHz
Power:
48.3 dBm
Package Type:
Flanged
Power(W):
70 W
Gain:
11 dB
more info
IE18110P Image
Description:GaN Power Transistor
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
1.805 to 1.88 GHz
Power:
50.41 dBm
Package Type:
Flanged
Power(W):
109.9 W
Gain:
18.9 dB
Supply Voltage:
48 V
Package:
NS-AS01
more info
Description:1030 MHz, 11.1 dB Bipolar Transistor
Application Industry:
Aerospace & Defence, Avionics
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.03 to 1.09 GHz
Power:
55.44 to 56.94 dBm
Package Type:
Flanged
Power(W):
494.31 W
Gain:
11.1 dB
Supply Voltage:
50 V
Package:
Ceramic
more info
Description:GaAs FET from 10.7 to 11.7 GHz
Transistor Type:
FET
Technology:
GaAs
Frequency:
10.7 to 11.7 GHz
Power:
41 to 42 dBm
Package Type:
Flanged
Power(W):
12.59 to 15.85 W
Supply Voltage:
10 V
more info

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