RF Transistors - Page 67

2360 RF Transistors from 26 Manufacturers meet your specification.
IE27330P Image
Description:GaN Power Transistor
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
2.62 to 2.69 GHz
Power:
55.19 dBm
Package Type:
Flanged
Power(W):
330.37 W
Gain:
15.4 dB
Supply Voltage:
48 V
Package:
NS-AS01
more info
Description:50 W, Si VDMOS Power Transistor
Application Industry:
Aerospace & Defence, Broadcast, Wireless Infrastru...
Transistor Type:
VDMOS
Technology:
Si
Frequency:
1 to 400 MHz
Power:
46 dBm
Package Type:
Flanged
Power(W):
50 W
more info
Description:50 W, GaN on SiC Transistor from 960 to 1215 MHz
Application Industry:
Avionics
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse
Frequency:
960 to 1215 MHz
Power:
46.98 dBm
Package Type:
Ceramic
Power(W):
50 W
Supply Voltage:
50 V
more info
Description:7.2 W GaN RF Transistor from DC to 25 GHz
Application Industry:
Aerospace & Defence, Wireless Infrastructure, Wire...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
DC to 25 GHz
Power:
38.45 dBm
Package Type:
Die
Power(W):
7 W
Gain:
15 dB
Supply Voltage:
12 to 29.5 V
Package:
0.83 x 0.55 x 0.10 mm
more info
Description:Si Based TMOS Transistor
Application Industry:
Aerospace & Defence, ISM, Broadcast, Commercial
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
175 MHz
Power:
54.77 dBm
Package Type:
Flanged
Power(W):
299.92 W
Gain:
12 dB
Supply Voltage:
28 V
Package:
Flange Ceramic
more info
Description:53.01 dBm (200 W), LDMOS Transistor from 1030 to 1090 MHz
Application Industry:
Aerospace & Defence, Avionics, Wireless Infrastruc...
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
1.03 to 1.09 GHz
Power:
53.01 dBm
Package Type:
Surface Mount
Power(W):
199.99 W
Supply Voltage:
28 V
Package:
SOT502A
more info
MMRF1011H Image
Description:Pulse Lateral N-Channel RF Power MOSFET, 1400 MHz, 330 W, 50 V
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Rada...
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
1.2 to 1.4 GHz
Power:
45.98 to 45.98 dBm
Package Type:
Flanged
Power(W):
39.63 W
Supply Voltage:
50 V
Package:
NI--780H--2L
more info
Description:DC to 20 GHz, HEMT Transistor
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Broa...
Transistor Type:
HEMT
Technology:
InGaAs
CW/Pulse:
CW
Frequency:
DC to 20 GHz
Package Type:
Flanged
Gain:
11.5 to 13.5 dB
Supply Voltage:
2 V
more info
Description:GaN Power Transistor
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
1.805 to 1.88 GHz
Power:
49.29 dBm
Package Type:
Flanged
Power(W):
84.92 W
Gain:
18.9 dB
Supply Voltage:
48 V
Package:
RF12002KR3
more info
Description:2.7 to 3.1 GHz, HEMT Transistor
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
2.7 to 3.1 GHz
Power:
50.79 dBm
Package Type:
Flanged
Power(W):
119.95 W
Gain:
13 dB
Supply Voltage:
32 V
Package:
Ceramic
more info
Description:GaN on SiC, GaN HEMT from 2.65 GHz
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
Frequency:
2.65 GHz
Power:
50.5 dBm
Package Type:
Flanged
Power(W):
112.2 W
Supply Voltage:
50 V
more info

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