RF Transistors - Page 62

2357 RF Transistors from 26 Manufacturers meet your specification.
IE08330D Image
Description:GaN Power Transistor
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
869 to 894 GHz
Power:
55.18 dBm
Package Type:
Flanged
Power(W):
329.61 W
Gain:
20.5 dB
Supply Voltage:
48 V
Package:
RF24001DKR3
more info
Description:RF & MICROWAVE TRANSISTORS TV/LINEAR APPLICATIONS
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Broa...
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
CW
Frequency:
470 to 860 MHz
Power:
43.98 dBm
Package Type:
Flanged
Power(W):
25 W
Supply Voltage:
28 V
Package:
M173
more info
Description:30W, 32V DC to 3.5 GHz, GaN RF Flangeless Power Transistor for Military, Civilian Radars, Test Intrumentation and Jammers Applications
Application Industry:
Wireless Infrastructure, Radar, Aerospace & Defenc...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
DC to 3.5 GHz
Power:
44.77 dBm
Package Type:
Flanged
Power(W):
29.99 W
Gain:
16.5 dB
Supply Voltage:
32 V
more info
Description:Si Based DMOS Transistor
Application Industry:
Aerospace & Defence, Radar, ISM, Avionics
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
CW
Frequency:
2 to 175 MHz
Power:
49.03 dBm
Package Type:
Flanged
Power(W):
79.98 W
Gain:
13 dB
Supply Voltage:
28 V
Package:
Flange Ceramic
more info
Description:DC to 3.5 GHz, GaN HEMT Transistor
Application Industry:
ISM, Wireless Infrastructure, Radar, Aerospace & D...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
DC to 3.5 GHz
Power:
50 dBm
Package Type:
Surface Mount
Power(W):
100 W
Supply Voltage:
50 V
Package:
SOT467B
more info
MRF8S9120N Image
Description:Single W-CDMA Lateral N-Channel RF Power MOSFET, 865-960 MHz, 33 W Avg., 28 V
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
865 to 960 MHz
Power:
45.19 dBm
Package Type:
Flanged
Power(W):
33.04 W
Supply Voltage:
28 V
Package:
CASE 2021--03, STYLE 1 OM--780--2 PLASTIC
more info
Description:DC to 24.3 GHz, HEMT Transistor
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Broa...
Transistor Type:
HEMT
Technology:
InGaAs
CW/Pulse:
CW
Frequency:
DC to 24.3 GHz
Power:
11.5 dBm
Package Type:
Flanged
Power(W):
0.01 W
Supply Voltage:
1.5 V
more info
Description:300 Watt GaN Power Transistor from 910 to 920 MHz
Application Industry:
ISM
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
910 to 920 MHz
Power:
55.9 dBm
Package Type:
Surface Mount
Power(W):
330 W
Gain:
17.1 to 18 dB
Supply Voltage:
50 V
more info
Description:1030 to 1090 MHz, 17.3 dB LDMOS Transistor
Application Industry:
Aerospace & Defence, Avionics
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.03 GHz
Power:
60 to 61.51 dBm
Package Type:
Flanged
Power(W):
1415.79 W
Gain:
17.3 dB
Supply Voltage:
50 V
Package:
Ceramic
more info
Description:GaAs FET from 5.3 to 5.9 GHz
Application Industry:
Communication, Wireless Infrastructure
Transistor Type:
FET
Technology:
GaAs
Frequency:
5.3 to 5.9 GHz
Power:
45 to 45.5 dBm
Package Type:
Flanged
Power(W):
31.62 to 35.48 W
Package:
IK
more info
Description:16 W, GaN HEMT Transistor from DC to 3.5 GHz
Application Industry:
Wireless Infrastructure, Test & Measurement, Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
DC to 3.5 GHz
Power:
42.04 dBm
Package Type:
Flanged
Power(W):
16 W
Supply Voltage:
48 V
more info

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