RF Transistors - Page 75

2360 RF Transistors from 26 Manufacturers meet your specification.
IE18110P Image
Description:GaN Power Transistor
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
1.805 to 1.88 GHz
Power:
50.41 dBm
Package Type:
Flanged
Power(W):
109.9 W
Gain:
18.9 dB
Supply Voltage:
48 V
Package:
NS-AS01
more info
A2T26H165-24S Image
Description:Airfast RF Power LDMOS Transistor, 2496-2690 MHz, 32 W Avg., 28 V
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
2.49 to 2.69 GHz
Power:
45.05 dBm
Package Type:
Flanged
Power(W):
31.99 W
Supply Voltage:
28 V
Package:
NI--780S--4L2L
more info
Description:DC to 12 GHz, HEMT Transistor
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Broa...
Transistor Type:
HEMT
Technology:
InGaAs
CW/Pulse:
CW
Frequency:
DC to 12 GHz
Package Type:
Flanged
Gain:
11.5 to 13 dB
Supply Voltage:
2 V
more info
IE27165PE Image
Description:GaN Power Transistor
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
2.62 to 2.69 GHz
Power:
52.17 dBm
Package Type:
Flanged
Power(W):
164.82 W
Gain:
16.9 dB
Supply Voltage:
48 V
Package:
NS-AS01
more info
Description:1 to 500 MHz, MOSFET Transistor
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Broa...
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
CW
Frequency:
1 to 500 MHz
Power:
53.01 dBm
Package Type:
Flanged
Power(W):
199.99 W
Gain:
11 dB
Supply Voltage:
28 V
Package:
Ceramic
more info
Description:GaN on SiC, GaN HEMT from 11.4 to 12 GHz
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
11.4 to 12 GHz
Power:
49.5 to 51 dBm
Package Type:
Flanged
Power(W):
89.13 to 125.89 W
Supply Voltage:
50 V
more info
Description:114 W, GaN HEMT Transistor from DC to 3.5 GHz
Application Industry:
Wireless Infrastructure, Test & Measurement, Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
DC to 3.5 GHz
Power:
50.57 dBm
Package Type:
Flanged
Power(W):
114.02 W
Supply Voltage:
48 V
more info
Description:180 W, LDMOS RF Transistor from 1.3 to 1.7 GHz
Application Industry:
ISM, Radar, SATCOM, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW, Pulse
Frequency:
1.3 to 1.7 GHz
Power:
52.553 dBm
Package Type:
Flanged
Power(W):
180 W
Supply Voltage:
28 V
more info
Description:13 W, Si LDMOS Power Transistor
Application Industry:
Aerospace & Defence, Broadcast, Wireless Infrastru...
Transistor Type:
LDMOS
Technology:
Si
Frequency:
1 to 1000 MHz
Power:
41 dBm
Package Type:
Surface Mount
Power(W):
13 W
more info
Description:6 Watts, 20 Volts, Class A Linear to 1000 MHz
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
CW
Frequency:
DC to 1 GHz
Power:
37.78 dBm
Package Type:
Screw Mount, Flanged
Power(W):
6 W
Supply Voltage:
20 V
Package:
55FT-2
more info
Description:8.7 W GaN RF Input-Matched Transistor from 30 MHz to 1.2 GHz
Application Industry:
Wireless Infrastructure, Radar, Test & Measurement...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
30 MHz to 1.2 GHz
Power:
38.45 dBm
Package Type:
Surface Mount
Power(W):
7 W
Gain:
21 dB
Supply Voltage:
32 to 55 V
Package:
6 x 5 mm
more info

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