RF Transistors - Page 75

2357 RF Transistors from 26 Manufacturers meet your specification.
Description:GaN on SiC Transistor from 2.4 to 2.5 GHz
Application Industry:
ISM
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
2.4 to 2.5 GHz
Power:
54.94 to 55.56 dBm
Package Type:
Surface Mount
Power(W):
312.1 to 360 W
Gain:
11.4 to 12.6 dB
Supply Voltage:
52 Vdc
more info
MMRF1318N Image
Description:Broadband RF Power LDMOS Transistor 10-600 MHz, 300 W CW, 50 V
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Rada...
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
10 to 600 MHz
Power:
54.77 dBm
Package Type:
Flanged
Power(W):
299.92 W
Supply Voltage:
50 V
Package:
TO--270WB--4 PLASTIC
more info
Description:13.75 to 14.5 GHz, HEMT Transistor
Application Industry:
SATCOM
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
13.75 to 14.5 GHz
Power:
46.99 dBm
Package Type:
Flanged
Power(W):
50 W
Supply Voltage:
24 V
more info
Description:275 W GaN Asymmetrical Doherty HEMT from 1880 to 2025 MHz
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse
Frequency:
1880 to 2025 MHz
Power:
53.01 to 54.5 dBm (Psat)
Package Type:
Flanged
Power(W):
200 to 282 W (Psat)
Gain:
14.8 to 15.3 dB
Supply Voltage:
48 to 52 V
more info
Description:1030 to 1090 MHz, 11.5 dB Bipolar Transistor
Application Industry:
Aerospace & Defence, Avionics
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.03 to 1.09 GHz
Power:
55.44 dBm
Package Type:
Flanged
Power(W):
349.95 W
Gain:
11.5 dB
Supply Voltage:
50 V
Package:
Ceramic
more info
Description:GaAs FET from 2.3 GHz
Application Industry:
Wireless Infrastructure
Transistor Type:
FET
Technology:
GaAs
Frequency:
2.3 GHz
Power:
35.5 to 36 dBm
Package Type:
Flanged
Power(W):
3.55 to 3.98 W
Package:
MK
more info
Description:15 W, GaN HEMT Transistor from DC to 8 GHz
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
DC to 8 GHz
Power:
41.76 dBm
Package Type:
Flanged
Power(W):
15 W
Supply Voltage:
48 V
more info
Description:260 W, LDMOS RF Transistor from 1.2 to 1.4 GHz
Application Industry:
Avionics, Radar, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW, Pulse
Frequency:
1.2 to 1.4 GHz
Power:
53.979 to 54.15 dBm
Power(W):
250 to 260 W
Supply Voltage:
36 V
more info
Description:125 W, Si LDMOS Power Transistor
Application Industry:
Aerospace & Defence, Broadcast, Wireless Infrastru...
Transistor Type:
LDMOS
Technology:
Si
Frequency:
1 to 500 MHz
Power:
50 dBm
Package Type:
Flanged
Power(W):
125 W
more info
Description:50 W, GaN Transistor from 1200 to 1400 MHz
Application Industry:
Radar
Technology:
GaN
CW/Pulse:
CW
Frequency:
1200 to 1400 MHz
Power:
46.98 dBm
Package Type:
Pallet
Power(W):
50 W
Supply Voltage:
50 V
more info
Description:18 W, 28 V, DC to 6 GHz GaN RF Power Transistor
Application Industry:
Wireless Infrastructure, Radar, Aerospace & Defenc...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
DC to 6 GHz
Power:
42.55 dBm
Package Type:
Flanged
Power(W):
17.99 W
Gain:
15.5 dB
Supply Voltage:
32 V
more info

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