RF Transistors - Page 76

2357 RF Transistors from 26 Manufacturers meet your specification.
Description:GaN Power Transistor
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
2.575 to 2.635 GHz
Power:
52.9 dBm
Package Type:
Flanged
Power(W):
194.98 W
Gain:
14.4 dB
Supply Voltage:
48 V
Package:
RF24001DKR3
more info
Description:10 W, C-band, Unmatched, GaN HEMT
Application Industry:
Aerospace & Defence, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
4.5 to 6 GHz
Power:
40 to 40.97 dBm
Package Type:
Flanged
Power(W):
12.5 W
Supply Voltage:
50 V
more info
Description:46.02 dBm (40 W), LDMOS Transistor from 1805 to 2170 MHz
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
1.805 to 2.17 GHz
Power:
46.02 dBm
Package Type:
Surface Mount
Power(W):
39.99 W
Supply Voltage:
28 V
Package:
SOT1211-2
more info
Description:N--Channel Enhancement--Mode Lateral MOSFETs
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
2110 to 2170 MHz
Power:
47.99 dBm
Package Type:
Chip
Power(W):
63 W
Gain:
16.4 to 16.5 dB
Supply Voltage:
48 V
more info
Description:DC to 12 GHz, HEMT Transistor
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Broa...
Transistor Type:
HEMT
Technology:
InGaAs
CW/Pulse:
CW
Frequency:
DC to 12 GHz
Power:
15 dBm
Package Type:
Flanged
Power(W):
0.03 W
Gain:
9 dB
Supply Voltage:
3 V
more info
Description:GaN on SiC HEMT from 2300 to 2400 MHz
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse
Frequency:
2300 to 2400 MHz
Power:
46.81 to 54.8 dBm
Package Type:
Flanged
Power(W):
48 to 302 W
Gain:
12.5 to 13.5 dB
Supply Voltage:
55 V
Package:
RF18010DKR3
more info
Description:1.5 W, GaN on SiC HEMT from 2.7 to 2.9 GHz
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse
Frequency:
2.7 to 2.9 GHz
Power:
61.76 dBm
Package Type:
2-Hole Flanged
Power(W):
1.5 W
Gain:
15 dB
Supply Voltage:
100 V
more info
Description:GaN on SiC, GaN HEMT from 7.7 to 8.5 GHz
Application Industry:
SATCOM, Communication, Wireless Infrastructure, Br...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
7.7 to 8.5 GHz
Power:
47 to 48 dBm
Package Type:
Flanged
Power(W):
50.12 to 63.1 W
Gain:
9.5 to 11 dB
Supply Voltage:
24 V
more info
Description:25 to 26 W, GaN HEMT Transistor from DC to 6 GHz
Application Industry:
Test & Measurement, Radar, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
DC to 6 GHz
Power:
44.1 dBm
Package Type:
Flanged
Power(W):
25.7 W
Supply Voltage:
48 V
Package:
680B
more info
Description:180 W, LDMOS RF Transistor from 1.3 to 1.6 GHz
Application Industry:
ISM, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW, Pulse
Frequency:
1.3 to 1.6 GHz
Power:
52.553 dBm
Package Type:
Flanged
Power(W):
180 W
Supply Voltage:
28 V
more info
Description:12 W, Si VDMOS Power Transistor
Application Industry:
Aerospace & Defence, Broadcast, Wireless Infrastru...
Transistor Type:
VDMOS
Technology:
Si
Frequency:
1 to 1000 MHz
Power:
40 dBm
Package Type:
Flanged
Power(W):
12 W
more info

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