RF Transistors - Page 76

2360 RF Transistors from 26 Manufacturers meet your specification.
IE27275D Image
Description:GaN Power Transistor
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
2.575 to 2.635 GHz
Power:
54.39 dBm
Package Type:
Flanged
Power(W):
274.79 W
Gain:
14.1 dB
Supply Voltage:
48 V
Package:
RF24001DKR3
more info
Description:320 W, 4.0 GHz, GaN HEMT Die
Application Industry:
Test & Measurement, Wireless Infrastructure, Broad...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
DC to 4 GHz
Package Type:
Surface Mount
Supply Voltage:
32 V
more info
Description:LDMOS 3-Stage Integrated Doherty MMIC Transistor from 3.7 to 4.1 GHz
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW, Pulse
Frequency:
3.7 to 4.1 GHz
Power:
47 dBm (P3dB)
Package Type:
Surface Mount
Power(W):
50.12 W
Supply Voltage:
28 V
more info
MRF6V3090NB Image
Description:Broadband RF Power LDMOS Transistor, 470-860 MHz, 90 W, 50 V
Application Industry:
Aerospace & Defence, Commercial, Broadcast
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
470 MHz to 1.215 GHz
Power:
42.55 to 49.54 dBm
Package Type:
Flanged
Power(W):
89.95 W
Supply Voltage:
50 V
Package:
TO--270WB--4 PLASTIC
more info
Description:DC to 175 MHz, MOSFET Transistor
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Broa...
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
CW
Frequency:
DC to 175 MHz
Power:
40 dBm
Package Type:
Flanged
Power(W):
10 W
Supply Voltage:
7.2 V
more info
Description:GaN Power Transistor
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
2.62 to 2.69 GHz
Power:
55.89 dBm
Package Type:
Flanged
Power(W):
388.15 W
Gain:
13.8 dB
Supply Voltage:
48 V
Package:
RF24001DKR3
more info
Description:1030 MHz, 9.2 dB Bipolar Transistor
Application Industry:
Aerospace & Defence, Avionics
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.03 to 1.09 GHz
Power:
60 to 61.5 dBm
Package Type:
Flanged
Power(W):
1412.54 W
Gain:
9.2 dB
Supply Voltage:
50 V
Package:
Ceramic
more info
Description:GaAs FET from 4.4 to 5.0 GHz
Application Industry:
Communication, Wireless Infrastructure
Transistor Type:
FET
Technology:
GaAs
Frequency:
4.4 to 5.0 GHz
Power:
42 to 43 dBm
Package Type:
Flanged
Power(W):
15.85 to 19.95 W
Package:
IB
more info
Description:340 W, GaN HEMT Transistor from DC to 5 GHz
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
DC to 5 GHz
Power:
55.31 dBm
Package Type:
Die
Power(W):
339.63 W
Supply Voltage:
48 V
more info
Description:10 W, LDMOS RF Transistor from 930 MHz to 1.6 GHz
Application Industry:
Avionics, ISM, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW, Pulse
Frequency:
930 MHz to 1.6 GHz
Power:
40 dBm
Package Type:
Flanged
Power(W):
10 W
Supply Voltage:
28 V
more info
Description:30 W, Si LDMOS Power Transistor
Application Industry:
Aerospace & Defence, Broadcast, Wireless Infrastru...
Transistor Type:
LDMOS
Technology:
Si
Frequency:
1 to 500 MHz
Power:
44 dBm
Package Type:
Surface Mount
Power(W):
30 W
more info

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