RF Transistors - Page 71

2357 RF Transistors from 26 Manufacturers meet your specification.
IE27275D Image
Description:GaN Power Transistor
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
2.575 to 2.635 GHz
Power:
54.39 dBm
Package Type:
Flanged
Power(W):
274.79 W
Gain:
14.1 dB
Supply Voltage:
48 V
Package:
RF24001DKR3
more info
Description:20Watts, 36 Volts, 100us, 10% Radar 2700-3100 MHz
Application Industry:
Radar
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
2.7 to 3.1 GHz
Power:
43.01 dBm
Package Type:
Flanged
Power(W):
20 W
Supply Voltage:
36 V
Package:
55CR
more info
Description:700 MHz to 1 GHz, HEMT Transistor
Application Industry:
Wireless Infrastructure, Commercial
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
700 MHz to 1 GHz
Power:
47 dBm
Package Type:
Flanged
Power(W):
50.12 W
Gain:
20 dB
Supply Voltage:
28 to 48 V
Package:
Ceramic
more info
Description:Si Based Bipolar Transistor
Application Industry:
Aerospace & Defence, ISM
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.025 to 1.15 GHz
Power:
56.99 dBm
Package Type:
Flanged
Power(W):
500.03 W
Gain:
8.5 to 9 dB
Supply Voltage:
50 V
Package:
Flange Ceramic
more info
Description:45.44 dBm (35 W), LDMOS Transistor from 1 to 1400 MHz
Application Industry:
Broadcast, ISM, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
1 MHz to 1.4 GHz
Power:
42.43 to 45.44 dBm
Package Type:
Surface Mount
Power(W):
34.99 W
Supply Voltage:
32 V
Package:
SOT467C
more info
MRF8VP13350N Image
Description:RF POWER LDMOS TRANSISTOR 700-1300 MHz, 350 W CW, 50 V
Application Industry:
ISM, Broadcast
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
700 MHz to 1.3 GHz
Power:
55.5 dBm
Package Type:
Flanged
Power(W):
354.81 W
Supply Voltage:
50 V
Package:
OM--780--4L PLASTIC
more info
Description:DC to 870 MHz, MOSFET Transistor
Application Industry:
Wireless Infrastructure, Broadcast
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
CW
Frequency:
DC to 870 MHz
Power:
39.54 to 40 dBm
Package Type:
Flanged
Power(W):
10 W
Supply Voltage:
7.2 V
more info
Description:GaN Power Transistor
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
3.4 to 3.6 GHz
Power:
42.7 dBm
Package Type:
Flanged
Power(W):
19 W
Gain:
17.3 dB
Supply Voltage:
48 V
Package:
RF12002KR3
more info
Description:150 W CW/Pulsed GaN Transistor from 960 to 1215 MHz
Application Industry:
Avionics, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
960 to 1215 MHz
Power:
51.76 dBm
Package Type:
Flanged
Power(W):
150 W
Gain:
12 to 16 dB
Supply Voltage:
28 V
more info
Description:GaAs FET from 14.5 GHz
Transistor Type:
FET
Technology:
GaAs
Frequency:
14.5 GHz
Power:
23 to 24 dBm
Package Type:
Chip
Power(W):
0.2 to 0.25 W
more info
Description:76.38 W, GaN HEMT Transistor from DC to 4 GHz
Application Industry:
Wireless Infrastructure, Test & Measurement, Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
DC to 4 GHz
Power:
48.83 dBm
Package Type:
Flanged
Power(W):
76.38 W
Supply Voltage:
48 V
more info

FiltersReset All

Application Industry

Transistor Type

Technology

CW/Pulse

Frequency

 
 
Apply

Power (dBm)

Apply

Power(W)

Apply

Gain (dB)

Apply

Supply Voltage (V)

Apply

Package Type