RF Transistors - Page 71

2360 RF Transistors from 26 Manufacturers meet your specification.
Description:GaN Power Transistor
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
2.11 to 2.17 GHz
Power:
55.18 dBm
Package Type:
Flanged
Power(W):
329.61 W
Gain:
15.6 dB
Supply Voltage:
48 V
Package:
NS-AS01
more info
Description:600 W, GaN Transistor from 1200 to 1400 MHz
Application Industry:
Radar
Technology:
GaN
CW/Pulse:
CW
Frequency:
1200 to 1400 MHz
Power:
57.78 dBm
Package Type:
Ceramic
Power(W):
600 W
Supply Voltage:
50 V
more info
Description:DC to 6 GHz, HEMT Transistor
Application Industry:
Wireless Infrastructure, Radar, Aerospace & Defenc...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
DC to 6 GHz
Power:
44.77 dBm
Package Type:
Flanged
Power(W):
29.99 W
Gain:
14 dB
Supply Voltage:
12 to 40 V
more info
Description:Si Based DMOS Transistor
Application Industry:
Aerospace & Defence, Radar, ISM, Avionics
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
Pulse
Frequency:
30 to 175 MHz
Power:
41.76 dBm
Package Type:
Flanged
Power(W):
15 W
Gain:
9.5 dB
Supply Voltage:
12 V
Package:
Flange Ceramic
more info
Description:50.41 dBm (110 W), LDMOS Transistor from 10 to 600 MHz
Application Industry:
ISM, RF Energy, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
10 to 600 MHz
Power:
50.41 dBm
Package Type:
Surface Mount
Power(W):
109.9 W
Supply Voltage:
50 V
Package:
SOT1223-2
more info
MRF8P9210N Image
Description:Single W-CDMA RF Power LDMOS Transistor, 920-960 MHz, 63 W Avg., 28 V
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
920 to 960 MHz
Power:
47.99 dBm
Package Type:
Flanged
Power(W):
62.95 W
Supply Voltage:
28 V
Package:
CASE 2023--02 OM--780--4 PLASTIC
more info
Description:DC to 30 MHz, MOSFET Transistor
Application Industry:
Wireless Infrastructure, Broadcast
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
CW
Frequency:
DC to 30 MHz
Power:
37.78 to 40 dBm
Package Type:
Flanged
Power(W):
10 W
Gain:
16 dB
Supply Voltage:
12.5 V
more info
IE21330D Image
Description:GaN Power Transistor
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
2.11 to 2.17 GHz
Power:
55.5 dBm
Package Type:
Flanged
Power(W):
354.81 W
Gain:
14.8 dB
Supply Voltage:
48 V
Package:
RF24001DKR3
more info
Description:960 to 1215 MHz, 12.37 dB Bipolar Transistor
Application Industry:
Aerospace & Defence, Avionics
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
960 MHz to 1.215 GHz
Power:
53.22 to 54.73 dBm
Package Type:
Flanged
Power(W):
297.17 W
Gain:
12.4 dB
Supply Voltage:
50 V
Package:
Ceramic
more info
Description:GaN on SiC, GaN HEMT from 2.14 GHz
Application Industry:
Cellular, Wireless Infrastructure, Wireless Commun...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
Frequency:
2.14 GHz
Power:
42 dBm
Package Type:
Flanged
Power(W):
15.85 W
Supply Voltage:
50 V
more info
Description:25 W, GaN HEMT Transistor from DC to 10 GHz
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
DC to 10 GHz
Power:
43.98 dBm
Package Type:
Flanged
Power(W):
25 W
Supply Voltage:
28 V
more info

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