RF Transistors - Page 79

2357 RF Transistors from 26 Manufacturers meet your specification.
Description:GaN Power Transistor
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
2.11 to 2.17 GHz
Power:
53.4 dBm
Package Type:
Flanged
Power(W):
218.78 W
Gain:
17.4 dB
Supply Voltage:
48 V
Package:
NS-AS01
more info
Description:GaAs FET from 2 GHz
Application Industry:
Wireless Infrastructure
Transistor Type:
FET
Technology:
GaAs
Frequency:
2 GHz
Power:
34.5 to 35.5 dBm
Package Type:
Surface Mount
Power(W):
2.82 to 3.55 W
Supply Voltage:
10 V
Package:
ZM
more info
Description:9 W, GaN HEMT Transistor from 1.93 to 1.99 GHz
Application Industry:
Test & Measurement, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
1.93 to 1.99 GHz
Power:
39.5 dBm
Package Type:
Flanged
Power(W):
9 W
Supply Voltage:
48 V
Package:
680B
more info
Description:40 W, LDMOS RF Transistor from 2.7 to 3.6 GHz
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW, Pulse
Frequency:
2.7 to 3.6 GHz
Power:
46.021 dBm
Package Type:
Flanged
Power(W):
40 W
Supply Voltage:
28 V
more info
Description:100 W, Si LDMOS Power Transistor
Application Industry:
Aerospace & Defence, Broadcast, Wireless Infrastru...
Transistor Type:
LDMOS
Technology:
Si
Frequency:
1 to 500 MHz
Power:
50 dBm
Package Type:
Flanged
Power(W):
100 W
more info
Description:15 Watts, 50 Volts, Pulsed & CW GaN on SiC Wideband Transistor QFN 4x4 mm
Application Industry:
Radar, Aerospace & Defence, , ISM, Avionics
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
DC to 3.5 GHz
Power:
41.76 dBm
Package Type:
Surface Mount
Power(W):
15 W
Supply Voltage:
50 V
Package:
Ceramic
more info
Description:1.8 to 2.4 GHz, HEMT Transistor
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
1.8 to 2.4 GHz
Power:
53.42 dBm
Package Type:
Flanged
Power(W):
219.79 W
Gain:
24 dB
Supply Voltage:
48 V
Package:
Ceramic
more info
Description:Si Based Bipolar Transistor
Application Industry:
Aerospace & Defence, ISM, Radar
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.2 to 1.4 GHz
Power:
49.03 dBm
Package Type:
Flanged
Power(W):
79.98 W
Gain:
7.5 dB
Supply Voltage:
40 V
Package:
Flange Ceramic
more info
Description:51.46 dBm (140 W), LDMOS Transistor from 2500 to 2700 MHz
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
2.5 to 2.7 GHz
Power:
51.46 dBm
Package Type:
Surface Mount
Power(W):
139.96 W
Supply Voltage:
28 V
Package:
SOT502A
more info
MHT1002GN Image
Description:350 W RF LDMOS Transistors for Consumer and Commercial Cooking
Application Industry:
ISM, RF Energy, Commercial
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
902 to 928 MHz
Power:
55.44 dBm
Package Type:
Flanged
Power(W):
350 W
Supply Voltage:
48 V
Package:
OM--780G--4L PLASTIC
more info
Description:890 to 950 MHz, MOSFET Transistor
Application Industry:
Wireless Infrastructure, Broadcast
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
CW
Frequency:
890 to 950 MHz
Power:
36.99 dBm
Package Type:
Flanged
Power(W):
0.0031 W
Gain:
14 dB
Supply Voltage:
12.5 V
more info

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