RF Transistors - Page 79

2360 RF Transistors from 26 Manufacturers meet your specification.
Description:GaN Power Transistor
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
2.3 to 2.4 GHz
Power:
45.05 dBm
Package Type:
Flanged
Power(W):
32 W
Gain:
15.3 dB
Supply Voltage:
48 V
Package:
RF12001DKR3
more info
Description:GaN on SiC, GaN HEMT from 1.7 to 2.5 GHz
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
1.7 to 2.5 GHz
Power:
51 to 51.9 dBm
Package Type:
Flanged
Power(W):
125.89 to 154.88 W
Supply Voltage:
50 V
more info
Description:350 W, GaN HEMT Transistor from DC to 3.5 GHz
Application Industry:
Wireless Infrastructure, Test & Measurement, Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
DC to 3.5 GHz
Power:
55.44 dBm
Package Type:
Flanged
Power(W):
350 W
Supply Voltage:
48 V
more info
PD85004 Image
Description:5 W, LDMOS RF Transistor from 860 to 960 MHz
Application Industry:
Broadcast, Commercial, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
860 to 960 MHz
Power:
36.98 dBm
Power(W):
4 to 5 W
Supply Voltage:
13.6 V
more info
Description:160 W, GaN on SiC HEMT Power Transistor
Application Industry:
Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
Frequency:
1 MHz to 2.5 GHz
Power:
52 dBm
Package Type:
Flanged
Power(W):
160 W
more info
Description:400 Watts - 50 Volts, 4.5ms, 30% Broad Band 1200 - 1400 MHz
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
1.2 to 1.4 GHz
Power:
56.02 dBm
Package Type:
Die
Power(W):
399.94 W
Supply Voltage:
50 V
Package:
55-KR
more info
Description:17 W GaN RF Transistor from DC to 4 GHz
Application Industry:
Wireless Infrastructure, Radar, Aerospace & Defenc...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
DC to 4 GHz
Power:
41.76 dBm
Package Type:
Surface Mount
Power(W):
15 W
Gain:
24 dB
Supply Voltage:
12 to 60 V
Package:
3 x 3 mm
more info
Description:Si Based Bipolar Transistor
Application Industry:
Aerospace & Defence, ISM, Radar
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.2 to 1.4 GHz
Power:
46.02 dBm
Package Type:
Flanged
Power(W):
39.99 W
Gain:
8.5 dB
Supply Voltage:
40 V
Package:
Flange Ceramic
more info
Description:1,000 Watt Pulsed LDMOS Transistor for Avionics
Application Industry:
Aerospace & Defence, Avionics, Wireless Infrastruc...
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
960 MHz to 1.215 GHz
Power:
60 dBm
Package Type:
Surface Mount
Power(W):
1000 W
Supply Voltage:
50 V
Package:
SOT539B
more info
MRF6V12250HS Image
Description:Pulsed Lateral N-Channel RF Power MOSFET, 960-1215 MHz, 275 W, 50 V
Application Industry:
Aerospace & Defence, Avionics
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
960 MHz to 1.215 GHz
Power:
44.39 dBm
Package Type:
Flanged
Power(W):
27.48 W
Supply Voltage:
50 V
Package:
CASE 465--06, STYLE 1 NI--780
more info
Description:175 to 530 MHz, MOSFET Transistor
Application Industry:
Wireless Infrastructure, Broadcast
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
CW
Frequency:
175 to 530 MHz
Power:
45.44 dBm
Package Type:
Flanged
Power(W):
34.99 W
Supply Voltage:
12.5 V
more info

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