RF Transistors - Page 77

2360 RF Transistors from 26 Manufacturers meet your specification.
Description:GaN Power Transistor
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
2.11 to 2.17 GHz
Power:
49.29 dBm
Package Type:
Flanged
Power(W):
84.92 W
Gain:
20.7 dB
Supply Voltage:
48 V
Package:
NS-AS01
more info
Description:RF POWER VERTICAL MOSFET
Application Industry:
Aerospace & Defence, Commercial
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
Pulse
Frequency:
DC to 175 MHz
Power:
51.76 dBm
Package Type:
Flanged
Power(W):
149.97 W
Supply Voltage:
50 V
Package:
M174
more info
Description:45W, 32V DC to 3.5 GHz, Earless GaN RF Power Transistor
Application Industry:
Wireless Infrastructure, Radar, Aerospace & Defenc...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
DC to 3.5 GHz
Power:
46.53 dBm
Package Type:
Flanged
Power(W):
44.98 W
Gain:
19 dB
Supply Voltage:
32 V
more info
Description:48 V GaN HEMT Transistor that operates from DC to 2.2 GHz with 50 W Saturated Power
Application Industry:
ISM, Wireless Infrastructure, Aerospace & Defence,...
Transistor Type:
HEMT
Technology:
GaN on Si, GaN
CW/Pulse:
Pulse, CW
Frequency:
DC to 2.5 GHz
Power:
46.53 dBm
Package Type:
Flanged
Power(W):
44.98 W
Gain:
17 dB
Supply Voltage:
48 V
Package:
TO272
more info
Description:10 to 600 MHz, Power LDMOS transistor
Application Industry:
Aerospace & Defence, ISM, RF Energy, Wireless Infr...
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
10 to 600 MHz
Power:
58.45 dBm
Package Type:
Surface Mount
Power(W):
699.84 W
Supply Voltage:
50 V
Package:
SOT1204-2
more info
MRFE6S9045N Image
Description:Single N-CDMA Lateral N-Channel Broadband RF Power MOSFET, 880 MHz, 10 W Avg., 28 V
Application Industry:
Wireless Infrastructure, Commercial
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
865 to 960 MHz
Power:
40 dBm
Package Type:
Flanged
Power(W):
10 W
Supply Voltage:
28 V
Package:
CASE 1265-09, STYLE 1 TO-270-2 PLASTIC
more info
Description:2.4 to 4 GHz, HEMT Transistor
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Broa...
Transistor Type:
HEMT
Technology:
InGaAs
CW/Pulse:
CW
Frequency:
2.4 to 4 GHz
Package Type:
Flanged
Gain:
13 to 18 dB
Supply Voltage:
2 V
more info
Description:GaN Power Transistor
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
2.62 to 2.69 GHz
Power:
55.19 dBm
Package Type:
Flanged
Power(W):
330.37 W
Gain:
14.2 dB
Supply Voltage:
48 V
Package:
RF24001DKR3
more info
Description:1.5 W, GaN on SiC HEMT from 2.7 to 2.9 GHz
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse
Frequency:
2.7 to 2.9 GHz
Power:
61.76 dBm
Package Type:
2-Hole Flanged
Power(W):
1.5 W
Gain:
15 dB
Supply Voltage:
100 V
more info
Description:GaAs FET from 2.3 GHz
Application Industry:
Wireless Infrastructure
Transistor Type:
FET
Technology:
GaAs
Frequency:
2.3 GHz
Power:
28.5 to 29.5 dBm
Package Type:
Flanged
Power(W):
0.71 to 0.89 W
Package:
ME
more info
Description:60 W, GaN HEMT Transistor from DC to 8 GHz
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
DC to 8 GHz
Power:
47.78 dBm
Package Type:
Die
Power(W):
59.98 W
Supply Voltage:
48 V
more info

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