RF Transistors - Page 77

2357 RF Transistors from 26 Manufacturers meet your specification.
Description:GaN Power Transistor
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
DC to 6 GHz
Power:
47.4 dBm
Package Type:
Flanged
Power(W):
54.95 W
Gain:
15.7 dB
Supply Voltage:
48 V
Package:
NS-CS01
more info
Description:125 Watts, 28 Volts, Class AB Defcom 225 - 400 MHz
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
CW
Frequency:
225 to 400 MHz
Power:
50.97 dBm
Package Type:
Flanged
Power(W):
125.03 W
Supply Voltage:
28 V
Package:
55JT-2
more info
Description:DC to 3.2 GHz, 51 dBm Gan Transistor
Application Industry:
Wireless Infrastructure, Radar, Aerospace & Defenc...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
DC to 3.2 GHz
Power:
50.97 dBm
Package Type:
Flanged
Power(W):
125.03 W
Gain:
17.5 dB
Supply Voltage:
12 to 55 V
more info
Description:Si Based TMOS Transistor
Application Industry:
Aerospace & Defence, Radar, ISM, Broadcast, Commer...
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
CW
Frequency:
5 to 500 MHz
Power:
51.76 to 53.01 dBm
Package Type:
Flanged
Power(W):
199.99 W
Gain:
14 dB
Supply Voltage:
50 V
Package:
Flange Ceramic
more info
Description:53.98 dBm (250 W), LDMOS Transistor from 1200 to 1400 MHz
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.2 to 1.4 GHz
Power:
53.98 dBm
Package Type:
Surface Mount
Power(W):
250.03 W
Supply Voltage:
50 V
Package:
SOT502A
more info
MRF8P29300HS Image
Description:Lateral N-Channel Broadband RF Power MOSFET, 2700-2900 MHz, 320 W, 30 V
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Rada...
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
2.7 to 2.9 GHz
Power:
54.19 dBm
Package Type:
Flanged
Power(W):
262.42 W
Supply Voltage:
30 V
Package:
CASE 375E--04, STYLE 1 NI--1230S
more info
Description:175 to 530 MHz, MOSFET Transistor
Application Industry:
Wireless Infrastructure, Broadcast, Radar
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
CW
Frequency:
175 to 530 MHz
Power:
48.75 to 49.24 dBm
Package Type:
Flanged
Power(W):
83.95 W
Supply Voltage:
12.5 V
more info
Description:550 W GaN Power Transistor from 1295 to 1305 MHz
Application Industry:
ISM, RF Energy
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
1295 to 1305 MHz
Power:
57.4 dBm
Package Type:
Flanged
Power(W):
550 W
Supply Voltage:
50 V
more info
Description:2998 MHz, 12.6 dB GaN Transistor
Application Industry:
ISM
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
2.998 GHz
Power:
56.99 to 58.45 dBm
Package Type:
Flanged
Power(W):
699.84 W
Gain:
12 dB
Supply Voltage:
50 V
Package:
Ceramic
more info
Description:GaAs FET from 12.7 to 13.2 GHz
Application Industry:
Communication, Wireless Infrastructure
Transistor Type:
FET
Technology:
GaAs
Frequency:
12.7 to 13.2 GHz
Power:
36.5 to 37.5 dBm
Package Type:
Flanged
Power(W):
4.47 to 5.62 W
Supply Voltage:
10 V
more info
Description:165 W, GaN HEMT Transistor from DC to 3.5 GHz
Application Industry:
Wireless Infrastructure, Test & Measurement, Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
DC to 3.5 GHz
Power:
52.17 dBm
Package Type:
Flanged
Power(W):
164.82 W
Supply Voltage:
48 V
more info

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