RF Transistors - Page 74

2360 RF Transistors from 26 Manufacturers meet your specification.
Description:GaN on SiC HEMT from 2300 to 2400 MHz
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse
Frequency:
2300 to 2400 MHz
Power:
46.81 to 54.8 dBm
Package Type:
Flanged
Power(W):
48 to 302 W
Gain:
12.5 to 13.5 dB
Supply Voltage:
55 V
Package:
RF18010DKR3
more info
Description:GaN Power Transistor
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
DC to 6 GHz
Power:
41.46 dBm
Package Type:
Flanged
Power(W):
14 W
Gain:
18.5 dB
Supply Voltage:
48 V
Package:
DFN66726L-Q2
more info
Description:1030 MHz, 17 dB LDMOS Transistor
Application Industry:
Aerospace & Defence, Avionics
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.03 to 1.09 GHz
Power:
53.01 to 56.02 dBm
Package Type:
Flanged
Power(W):
399.94 W
Gain:
17 dB
Supply Voltage:
50 V
Package:
Ceramic
more info
Description:GaAs FET from 14.0 to 14.5 GHz
Application Industry:
Communication, Wireless Infrastructure
Transistor Type:
FET
Technology:
GaAs
Frequency:
14.0 to 14.5 GHz
Power:
35.5 to 36 dBm
Package Type:
Flanged
Power(W):
3.55 to 3.98 W
more info
Description:63 W, GaN HEMT Transistor from DC to 4 GHz
Application Industry:
Wireless Infrastructure, Test & Measurement, Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
DC to 4 GHz
Power:
47.99 dBm
Package Type:
Flanged
Power(W):
62.95 W
Supply Voltage:
48 V
more info
PD85006-E Image
Description:6 W, LDMOS / MOSFET RF Transistor from 860 to 960 MHz
Application Industry:
Broadcast, Commercial, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
860 to 960 MHz
Power:
37.78 dBm
Package Type:
Surface Mount
Power(W):
5 to 6 W
Supply Voltage:
13.6 V
more info
Description:120 W, GaN on SiC HEMT Power Transistor
Application Industry:
Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
Frequency:
1 MHz to 3 GHz
Power:
50 dBm
Package Type:
Flanged
Power(W):
120 W
more info
Description:400 W, GaN Transistor from 1200 to 1400 MHz
Application Industry:
Radar
Technology:
GaN
CW/Pulse:
CW
Frequency:
1200 to 1400 MHz
Power:
56.02 dBm
Package Type:
Ceramic
Power(W):
400 W
Supply Voltage:
50 V
more info
Description:285W GaN RF Power Transistor from DC to 2 GHz
Application Industry:
Wireless Infrastructure, Radar, Aerospace & Defenc...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
DC to 2 GHz
Power:
54.55 dBm
Package Type:
Flanged
Power(W):
285.1 W
Gain:
19 dB
Supply Voltage:
36 V
more info
Description:500 W GaN-on-SiC HEMT from 2515 to 2675 MHz
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse
Frequency:
2.515 to 2.675 GHz
Power:
57 dBm (P3)
Package Type:
Earless Flanged
Power(W):
501.19 W
Gain:
15 dB
Supply Voltage:
48 V
more info
Description:1.805 to 1.99 GHz, LDMOS Transistor
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
1.805 to 1.99 GHz
Power:
53.01 dBm
Package Type:
Surface Mount
Power(W):
199.99 W
Supply Voltage:
28 V
Package:
SOT502B
more info

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