RF Transistors - Page 74

2357 RF Transistors from 26 Manufacturers meet your specification.
RT12014P Image
Description:GaN Power Transistor
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
DC to 6 GHz
Power:
41.46 dBm
Package Type:
Flanged
Power(W):
14 W
Gain:
17.5 dB
Supply Voltage:
48 V
Package:
NS-CS01
more info
IE27330P Image
Description:GaN Power Transistor
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
2.62 to 2.69 GHz
Power:
55.19 dBm
Package Type:
Flanged
Power(W):
330.37 W
Gain:
15.4 dB
Supply Voltage:
48 V
Package:
NS-AS01
more info
Description:1.025 to 1.150 GHz, HEMT Transistor
Application Industry:
Aerospace & Defence, Avionics
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
1.025 to 1.150 GHz
Power:
44.77 dBm
Package Type:
Flanged
Power(W):
29.99 W
Gain:
19 dB
Supply Voltage:
50 V
Package:
Ceramic
more info
Description:GaAs HEMT from 12 GHz
Application Industry:
SATCOM, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaAs
Frequency:
12 GHz
Power:
14 dBm
Package Type:
Surface Mount
Power(W):
0 to 0.03 W
Gain:
9.5 to 10.5 dB
Supply Voltage:
2 V
Package:
LG
more info
Description:15 W, GaN HEMT Transistor from DC to 8 GHz
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
DC to 8 GHz
Power:
41.76 dBm
Package Type:
Die
Power(W):
15 W
Supply Voltage:
48 V
more info
Description:120 W, LDMOS RF Transistor from 1 to 1.5 GHz
Application Industry:
Avionics, Broadcast, Commercial, Wireless Infrastr...
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW, Pulse
Frequency:
1 to 1.5 GHz
Power:
50.792 dBm
Package Type:
Flanged
Power(W):
120 W
Supply Voltage:
50 V
more info
Description:45 W, Si VDMOS Power Transistor
Application Industry:
Aerospace & Defence, Broadcast, Wireless Infrastru...
Transistor Type:
VDMOS
Technology:
Si
Frequency:
1 to 500 MHz
Power:
46 dBm
Package Type:
Flanged
Power(W):
45 W
more info
Description:RF AND MICROWAVE TRANSISTORS UHF MOBILE APPLICATIONS
Application Industry:
Wireless Infrastructure, Broadcast
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
CW
Frequency:
450 to 512 MHz
Power:
33.01 dBm
Package Type:
Screw Mount, Flanged
Power(W):
2 W
Supply Voltage:
12.5 V
Package:
M122
more info
Description:2.5 to 2.7 GHz, HEMT Transistor
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
2.5 to 2.7 GHz
Power:
53.01 dBm
Package Type:
Flanged
Power(W):
199.99 W
Gain:
23 dB
Supply Voltage:
48 V
Package:
Ceramic
more info
Description:6 W GaN HEMT from DC to 6 GHz
Application Industry:
Wireless Infrastructure, Broadcast, Test & Measure...
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
DC to 6 GHz
Power:
37.78 dBm
Package Type:
Flanged
Power(W):
6 W
Supply Voltage:
28 V
more info
Description:DC to 6 GHz, GaN HEMT Transistor
Application Industry:
ISM, Wireless Infrastructure, Radar, Aerospace & D...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
DC to 6 GHz
Power:
44.77 dBm
Package Type:
Surface Mount
Power(W):
29.99 W
Supply Voltage:
50 V
Package:
SOT1227B
more info

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