RF Transistors - Page 78

2360 RF Transistors from 26 Manufacturers meet your specification.
IR08330P Image
Description:GaN Power Transistor
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
770 to 870 GHz
Power:
55.18 dBm
Package Type:
Flanged
Power(W):
329.61 W
Gain:
21 dB
Supply Voltage:
48 V
Package:
NS-AS01
more info
Description:285 W, LDMOS RF Transistor from 960 MHz to 1.215 GHz
Application Industry:
Avionics, Radar, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW, Pulse
Frequency:
960 MHz to 1.215 GHz
Power:
53.979 to 54.548 dBm
Power(W):
250 to 285 W
Supply Voltage:
36 V
more info
Description:45 W, Si LDMOS Power Transistor
Application Industry:
Aerospace & Defence, Broadcast, Wireless Infrastru...
Transistor Type:
LDMOS
Technology:
Si
Frequency:
1 to 500 MHz
Power:
46 dBm
Package Type:
Flanged
Power(W):
45 W
more info
Description:RF POWER VERTICAL MOSFET
Application Industry:
Aerospace & Defence, Commercial
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
Pulse
Frequency:
DC to 175 MHz
Power:
51.76 dBm
Package Type:
Flanged
Power(W):
149.97 W
Supply Voltage:
50 V
Package:
M174
more info
Description:DC to 3.5 GHz, HEMT Transistor
Application Industry:
Wireless Infrastructure, Radar, Aerospace & Defenc...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
DC to 3.5 GHz
Power:
50.29 dBm
Package Type:
Flanged
Power(W):
106.91 W
Gain:
14 dB
Supply Voltage:
28 V
more info
Description:Si Based Bipolar Transistor
Application Industry:
Aerospace & Defence, ISM
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
CW
Frequency:
30 to 500 MHz
Power:
50 dBm
Package Type:
Flanged
Power(W):
100 W
Gain:
8.5 to 9.5 dB
Supply Voltage:
28 V
Package:
Flange Ceramic
more info
Description:53.8 dBm (240 W), LDMOS Transistor from 2500 to 2700 MHz
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
2.5 to 2.7 GHz
Power:
53.01 dBm
Package Type:
Surface Mount
Power(W):
199.99 W
Supply Voltage:
28 V
Package:
SOT1252-1
more info
MMRF1014N Image
Description:LATERAL N--CHANNEL RF POWER LDMOS TRANSISTOR, 36526 MHz, 4 W, 28 V
Application Industry:
Aerospace & Defence, Avionics
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1 MHz to 2 GHz
Power:
36.02 dBm
Package Type:
Flanged
Power(W):
4 W
Supply Voltage:
28 V
Package:
PLD--1.5 PLASTIC
more info
Description:DC to 527 MHz, MOSFET Transistor
Application Industry:
Wireless Infrastructure, Broadcast
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
CW
Frequency:
DC to 527 MHz
Power:
35.56 to 36.02 dBm
Package Type:
Flanged
Power(W):
4 W
Supply Voltage:
3.6 V
more info
Description:GaN Power Transistor
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
1.88 to 2.025 GHz
Power:
52.9 dBm
Package Type:
Flanged
Power(W):
194.98 W
Gain:
16.9 dB
Supply Voltage:
48 V
Package:
RF12001DKR3
more info
Description:3100 to 3500 MHz, 8.5 dB Bipolar Transistor
Application Industry:
Radar
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
3.1 to 3.5 GHz
Power:
33.01 dBm
Package Type:
Flanged
Power(W):
2 W
Gain:
7.5 dB
Supply Voltage:
36 V
Package:
Ceramic
more info

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