RF Transistors - Page 78

2357 RF Transistors from 26 Manufacturers meet your specification.
Description:GaN Power Transistor
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
770 to 900 GHz
Power:
52.17 dBm
Package Type:
Flanged
Power(W):
164.82 W
Gain:
20.9 dB
Supply Voltage:
48 V
Package:
NS-AS01
more info
PD85006-E Image
Description:6 W, LDMOS / MOSFET RF Transistor from 860 to 960 MHz
Application Industry:
Broadcast, Commercial, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
860 to 960 MHz
Power:
37.78 dBm
Package Type:
Surface Mount
Power(W):
5 to 6 W
Supply Voltage:
13.6 V
more info
Description:200 W, Si LDMOS Power Transistor
Application Industry:
Broadcast, Wireless Communication
Transistor Type:
LDMOS
Technology:
Si
Frequency:
1 to 1100 MHz
Power:
53 dBm
Package Type:
Flanged
Power(W):
200 W
more info
Description:RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Broa...
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
CW
Frequency:
DC to 30 MHz
Power:
51.76 dBm
Package Type:
2-Hole Flanged
Power(W):
149.97 W
Supply Voltage:
50 V
Package:
M174
more info
Description:30W, 32V DC to 3.5 GHz, GaN RF Power Transistor
Application Industry:
Wireless Infrastructure, Radar, Aerospace & Defenc...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
DC to 3.5 GHz
Power:
44.77 dBm
Package Type:
Flanged
Power(W):
29.99 W
Gain:
16.5 dB
Supply Voltage:
32 V
more info
MAGe-102425-300 Image
Description:300 Watt Low Cost GaN Power Transistor in a Plastic Package
Application Industry:
ISM, RF Energy
Transistor Type:
HEMT
Technology:
GaN on Si, GaN
CW/Pulse:
CW
Frequency:
0 to 2.5 GHz
Package Type:
Flanged
Gain:
18 dB
Supply Voltage:
50 V
Package:
TO-272S-4
more info
Description:51.14 dBm (130 W), LDMOS Transistor from 500 to 1400 MHz
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
500 MHz to 1.4 GHz
Power:
51.14 dBm
Package Type:
Surface Mount
Power(W):
130.02 W
Supply Voltage:
50 V
Package:
SOT1135B
more info
AFT05MP075GN Image
Description:Airfast Broadband RF Power LDMOS Transistor, 136-520 MHz, 70 W, 12.5 V
Application Industry:
Wireless Infrastructure, Broadcast
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
136 to 520 MHz
Power:
48.45 dBm
Package Type:
Flanged
Power(W):
69.98 W
Supply Voltage:
12.5 V
Package:
TO--270WBG--4
more info
Description:100 W GaN HEMT from 13.75 to 14.5 GHz
Application Industry:
SATCOM
Transistor Type:
HEMT
Technology:
GaN
CW/Pulse:
CW
Frequency:
13.75 to 14.5 GHz
Power:
49 to 50 dBm
Package Type:
Flanged
Power(W):
79.43 to 100 W
Supply Voltage:
27 V
Package:
GF-69
more info
Description:GaN Power Transistor
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
1.805 to 1.88 GHz
Power:
55.18 dBm
Package Type:
Flanged
Power(W):
329.61 W
Gain:
15.5 dB
Supply Voltage:
48 V
Package:
RF24001DKR3
more info
Description:2700 to 2900 MHz, 11.4 dB GaN Transistor
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
2.7 to 2.9 GHz
Power:
53.98 to 55.98 dBm
Package Type:
Flanged
Power(W):
396.28 W
Gain:
11 dB
Supply Voltage:
50 V
Package:
Ceramic
more info

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