RF Transistors - Page 73

2360 RF Transistors from 26 Manufacturers meet your specification.
Description:GaN Power Transistor
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
DC to 6 GHz
Power:
44.47 dBm
Package Type:
Flanged
Power(W):
27.99 W
Gain:
18.7 dB
Supply Voltage:
48 V
Package:
DFN66726L-Q2
more info
Description:960 to 1215 MHz, 12 dB Bipolar Transistor
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Broa...
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
960 MHz to 1.215 GHz
Power:
48.45 to 50.93 dBm
Package Type:
Flanged
Power(W):
123.88 W
Gain:
10.6 dB
Supply Voltage:
50 V
Package:
Ceramic
more info
Description:GaN on SiC, GaN HEMT from 2.6 GHz
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
Frequency:
2.6 GHz
Power:
44 dBm
Package Type:
Flanged
Power(W):
25.12 W
Supply Voltage:
50 V
more info
Description:60 W, GaN HEMT Transistor from DC to 10 GHz
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
DC to 10 GHz
Power:
47.78 dBm
Package Type:
Die
Power(W):
59.98 W
Supply Voltage:
28 V
more info
PD57030-E Image
Description:30 W, LDMOS / MOSFET RF Transistor from 925 to 960 MHz
Application Industry:
Wireless Infrastructure, Commercial
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
925 to 960 MHz
Power:
44.77 dBm
Package Type:
Surface Mount
Power(W):
30 W
Supply Voltage:
28 V
more info
Description:125 W, GaN Transistor from 1030 to 1090 MHz
Application Industry:
Avionics
Technology:
GaN
CW/Pulse:
CW
Frequency:
1030 to 1090 MHz
Power:
50.96 dBm
Package Type:
Ceramic
Power(W):
125 W
Supply Voltage:
50 V
more info
Description:DC to 3.5 GHz, HEMT Transistor
Application Industry:
Wireless Infrastructure, Radar, Aerospace & Defenc...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
DC to 3.5 GHz
Power:
43.01 dBm
Package Type:
Flanged
Power(W):
20 W
Gain:
14 dB
Supply Voltage:
32 V
more info
Description:400 W CW/Pulsed GaN Amplifier from 2.75 to 3.75 GHz
Application Industry:
Radar, Military, Aerospace & Defence
Transistor Type:
FET
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
2.75 to 3.75 GHz
Power:
57.7 dBm
Package Type:
Flanged
Power(W):
588.84 W
Supply Voltage:
50 V
more info
Description:5 W GaN Power Transistor from 2.3 to 5 GHz
Application Industry:
Wireless Infrastructure
Technology:
GaN
CW/Pulse:
CW
Frequency:
2300 to 5000 MHz
Power:
37 dBm
Package Type:
Surface Mount
Power(W):
5 W
more info
MMRF1018N Image
Description:Broadband RF Power LDMOS Transistor, 470-860 MHz, 90 W, 50 V
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Rada...
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
470 to 860 MHz
Power:
49.54 dBm
Package Type:
Flanged
Power(W):
89.95 W
Supply Voltage:
50 V
Package:
TO--270WB--4 PLASTIC
more info
Description:100W GaN HEMT for Satellite Earth Stations
Application Industry:
SATCOM
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
Frequency:
13.75 to 14.5 GHz
Power:
50 dBm
Package Type:
Flanged
Power(W):
100 W
Gain:
10 dB
more info

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