RF Transistors - Page 80

2357 RF Transistors from 26 Manufacturers meet your specification.
IE27165PE Image
Description:GaN Power Transistor
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
2.62 to 2.69 GHz
Power:
52.17 dBm
Package Type:
Flanged
Power(W):
164.82 W
Gain:
16.9 dB
Supply Voltage:
48 V
Package:
NS-AS01
more info
Description:300 W GaN Asymmetrical Doherty HEMT from 2620 to 2690 MHz
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse
Frequency:
2620 to 2690 MHz
Power:
47.3 dBm
Package Type:
Flanged
Power(W):
54 W
Gain:
14.1 to 14.2 dB
Supply Voltage:
48 to 52 V
Package:
RF18010DKR3
more info
Description:1.2 to 1.4 GHz, HEMT Transistor
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
1.2 to 1.4 GHz
Power:
50.97 dBm
Package Type:
Flanged
Power(W):
125.03 W
Gain:
18 dB
Supply Voltage:
50 V
Package:
Ceramic
more info
Description:GaAs FET from 9.5 to 10.5 GHz
Application Industry:
Communication, Wireless Infrastructure
Transistor Type:
FET
Technology:
GaAs
Frequency:
9.5 to 10.5 GHz
Power:
41 to 42 dBm
Package Type:
Flanged
Power(W):
12.59 to 15.85 W
Supply Voltage:
10 V
more info
Description:25 W, GaN HEMT Transistor from DC to 10 GHz
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
DC to 10 GHz
Power:
43.98 dBm
Package Type:
Flanged
Power(W):
25 W
Supply Voltage:
28 V
more info
Description:75 W, LDMOS RF Transistor from 3.1 to 3.5 GHz
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW, Pulse
Frequency:
3.1 to 3.5 GHz
Power:
48.751 dBm
Package Type:
Flanged
Power(W):
75 W
Supply Voltage:
28 V
more info
Description:40 W, Si VDMOS Power Transistor
Application Industry:
Aerospace & Defence, Broadcast, Wireless Infrastru...
Transistor Type:
VDMOS
Technology:
Si
Frequency:
1 to 500 MHz
Power:
46 dBm
Package Type:
Flanged
Power(W):
40 W
more info
Description:RF POWER MOSFET N-CHANNEL ENHANCEMENT MODE
Application Industry:
ISM, Commercial
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
Pulse
Frequency:
DC to 45 MHz
Power:
54.77 dBm
Package Type:
Die
Power(W):
299.92 W
Supply Voltage:
200 V
Package:
TO-247 [L]
more info
Description:DC to 4 GHz, HEMT Transistor
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
DC to 4 GHz
Power:
36.99 dBm
Package Type:
Surface Mount
Power(W):
5 W
Gain:
19 dB
Supply Voltage:
32 V
more info
Description:400 W CW/Pulsed GaN Amplifier from 2.75 to 3.75 GHz
Application Industry:
Radar, Military, Aerospace & Defence
Transistor Type:
FET
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
2.75 to 3.75 GHz
Power:
57.7 dBm
Package Type:
Flanged
Power(W):
588.84 W
Supply Voltage:
50 V
more info
Description:2 kW CW/Pulsed LDMOS Power Transistor from 1 to 400 MHz
Application Industry:
Broadcast, Communication, ISM, Radar, Wireless Inf...
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW, Pulse
Frequency:
1 to 400 MHz
Power:
63 dBm
Package Type:
Earless Flanged
Supply Voltage:
65 V
more info

FiltersReset All

Application Industry

Transistor Type

Technology

CW/Pulse

Frequency

 
 
Apply

Power (dBm)

Apply

Power(W)

Apply

Gain (dB)

Apply

Supply Voltage (V)

Apply

Package Type