RF Transistors - Page 80

2360 RF Transistors from 26 Manufacturers meet your specification.
Description:300 W GaN Asymmetrical Doherty HEMT from 2620 to 2690 MHz
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse
Frequency:
2620 to 2690 MHz
Power:
47.3 dBm
Package Type:
Flanged
Power(W):
54 W
Gain:
14.1 to 14.2 dB
Supply Voltage:
48 to 52 V
Package:
RF18010DKR3
more info
IE27220PE Image
Description:GaN Power Transistor
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
2.62 to 2.69 GHz
Power:
53.4 dBm
Package Type:
Flanged
Power(W):
218.78 W
Gain:
17 dB
Supply Voltage:
48 V
Package:
NS-AS01
more info
Description:1200 to 1400 MHz, 13.2 dB LDMOS Transistor
Application Industry:
Radar
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.2 to 1.4 GHz
Power:
40 to 43.98 dBm
Package Type:
Flanged
Power(W):
25 W
Gain:
13.2 dB
Supply Voltage:
30 V
Package:
Ceramic
more info
Description:GaN on SiC, GaN HEMT from DC to 3.7 GHz
Application Industry:
Cellular, Wireless Infrastructure, Wireless Commun...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
Frequency:
DC to 3.7 GHz
Power:
41 dBm
Package Type:
Surface Mount
Power(W):
12.59 W
Supply Voltage:
50 V
more info
Description:200 W, GaN HEMT Transistor from DC to 8 GHz
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
DC to 8 GHz
Power:
53.01 dBm
Package Type:
Die
Power(W):
199.99 W
Supply Voltage:
48 V
more info
Description:180 W, LDMOS RF Transistor from 1.3 to 1.6 GHz
Application Industry:
ISM, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW, Pulse
Frequency:
1.3 to 1.6 GHz
Power:
52.553 dBm
Package Type:
Flanged
Power(W):
180 W
Supply Voltage:
28 V
more info
Description:70 W, GaN on SiC HEMT Power Transistor
Application Industry:
Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
Frequency:
1 MHz to 3 GHz
Power:
48 dBm
Package Type:
Flanged
Power(W):
70 W
more info
Description:RF & MICROWAVE TRANSISTORS FM MOBILE APPLICATIONS
Application Industry:
Cellular, Broadcast
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
CW
Frequency:
DC to 175 MHz
Power:
38.45 dBm
Package Type:
Screw Mount, Flanged
Power(W):
7 W
Supply Voltage:
12.5 V
Package:
M135
more info
Description:DC to 2.7 GHz, HEMT Transistor
Application Industry:
Wireless Infrastructure, Radar, Test & Measurement...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
DC to 2.7 GHz
Power:
51.76 dBm
Package Type:
Surface Mount
Power(W):
149.97 W
Gain:
21.8 dB
Supply Voltage:
65 to 70 V
Package:
7.2 x 6.6 mm
more info
Description:40-W, 6.0-GHz, GaN HEMT Die
Application Industry:
Test & Measurement, Wireless Infrastructure, Broad...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
DC to 6 GHz
Power:
46.02 dBm
Package Type:
Die
Power(W):
39.99 W
Supply Voltage:
50 V
more info
Description:45.44 dBm (35 W), LDMOS Transistor from 10 to 600 MHz
Application Industry:
Broadcast, ISM, RF Energy, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
10 to 600 MHz
Power:
45.44 dBm
Package Type:
Surface Mount
Power(W):
34.99 W
Supply Voltage:
50 V
Package:
SOT1223-2
more info

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