RF Transistors - Page 85

2360 RF Transistors from 26 Manufacturers meet your specification.
Description:Class-AB GaN-on-SiC HEMT Transistor
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
2.7 to 3.1 GHz
Power:
50.79 to 51.61 dBm
Package Type:
Die
Power(W):
144.88 W
Supply Voltage:
50 V
Package:
55-QP
more info
QPD1425L Image
Description:300 W CW/Pulsed GaN HEMT from 1.2 to 1.4 GHz for Radar Applications
Application Industry:
Radar, Military, Broadcast, Communication, Test & ...
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
1200 to 1400 MHz
Power:
55 dBm (Psat)
Package Type:
2-Hole Flanged
Power(W):
300 W (Psat)
Supply Voltage:
65 V
more info
Description:2.7 to 3.1 GHz, GaN on Si HEMT for Aerospace & Defence Application
Application Industry:
Aerospace & Defence
Transistor Type:
HEMT
Technology:
GaN on Si, GaN
CW/Pulse:
CW
Frequency:
2.7 to 3.1 GHz
Power:
56.02 dBm
Package Type:
Pallet
Power(W):
399.94 W
Gain:
15 dB
Supply Voltage:
50 V
Package:
Pallet
more info
Description:51.14 dBm (130 W), LDMOS Transistor from 500 to 1400 MHz
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
500 MHz to 1.4 GHz
Power:
56.99 dBm
Package Type:
Surface Mount
Power(W):
500.03 W
Supply Voltage:
50 V
Package:
SOT1135B
more info
MMRF1312HS Image
Description:RF POWER LDMOS TRANSISTOR 900-1215 MHz, 1000 W Peak, 52 V
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Rada...
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
900 MHz to 1.215 GHz
Power:
60 dBm
Package Type:
Flanged
Power(W):
1000 W
Supply Voltage:
52 V
Package:
NI--1230S--4S
more info
Description:GaN Power Transistor
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
3.4 to 3.6 GHz
Power:
42.7 dBm
Package Type:
Flanged
Power(W):
19 W
Gain:
17.3 dB
Supply Voltage:
48 V
Package:
RF12002KR3
more info
Description:1.030 GHz, HEMT Transistor
Application Industry:
Aerospace & Defence, Avionics
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
1.030 GHz
Power:
59.03 dBm
Package Type:
Flanged
Power(W):
799.83 W
Gain:
17 dB
Supply Voltage:
50 V
Package:
Ceramic
more info
Description:GaAs FET from 13.75 to 14.5 GHz
Application Industry:
Communication, Wireless Infrastructure
Transistor Type:
FET
Technology:
GaAs
Frequency:
13.75 to 14.5 GHz
Power:
44 to 44.5 dBm
Package Type:
Flanged
Power(W):
25.12 to 28.18 W
Supply Voltage:
10 V
more info
Description:50 W, GaN HEMT Transistor from DC to 10 GHz
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
DC to 10 GHz
Power:
46.99 dBm
Package Type:
Flanged
Power(W):
50 W
Supply Voltage:
28 V
more info
SD56060 Image
Description:60 W, LDMOS / MOSFET RF Transistor from 860 MHz
Application Industry:
Commercial, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
860 MHz
Power:
47.78 dBm
Package Type:
Flanged
Power(W):
60 W
Supply Voltage:
28 V
more info

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