RF Transistors - Page 85

2357 RF Transistors from 26 Manufacturers meet your specification.
Description:RF POWER VERTICAL MOSFET
Application Industry:
Aerospace & Defence, Commercial
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
Pulse
Frequency:
DC to 150 MHz
Power:
51.76 dBm
Package Type:
Flanged
Power(W):
149.97 W
Supply Voltage:
50 V
Package:
M174
more info
Description:1.2 to 1.4 GHz, HEMT Transistor
Application Industry:
Radar, Aerospace & Defence, Wireless Infrastructur...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
1.2 to 1.4 GHz
Power:
56.99 dBm
Package Type:
Surface Mount
Power(W):
500.03 W
Gain:
19.9 dB
Supply Voltage:
28 to 55 V
more info
Description:Si Based Bipolar Transistor
Application Industry:
Aerospace & Defence, ISM, Radar
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.2 to 1.4 GHz
Power:
50 dBm
Package Type:
Flanged
Power(W):
100 W
Gain:
6 dB
Supply Voltage:
28 V
Package:
Flange Ceramic
more info
Description:10 to 600 MHz, 48.75 dBm, LDMOS Transistor
Application Industry:
Broadcast, ISM, RF Energy, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
10 to 600 MHz
Power:
48.75 dBm
Package Type:
Surface Mount
Power(W):
74.99 W
Supply Voltage:
50 V
Package:
SOT1224-2
more info
MRF8S9220HR3 Image
Description:Single W-CDMA Lateral N-Channel RF Power MOSFET, 920-960 MHz, 65 W Avg., 28 V
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
920 to 960 MHz
Power:
48.13 dBm
Package Type:
Flanged
Power(W):
65.01 W
Supply Voltage:
28 V
Package:
CASE 465-06, STYLE 1 NI-780
more info
Description:GaN Power Transistor
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
1.805 to 1.88 GHz
Power:
55.18 dBm
Package Type:
Flanged
Power(W):
329.61 W
Gain:
15.8 dB
Supply Voltage:
48 V
Package:
NS-AS01
more info
Description:1030 to 1090 MHz, 9.8 dB Bipolar Transistor
Application Industry:
Aerospace & Defence, Avionics
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.03 to 1.09 GHz
Power:
60 dBm
Package Type:
Flanged
Power(W):
1000 W
Gain:
9.8 dB
Supply Voltage:
50 V
Package:
Ceramic
more info
Description:GaN on SiC, GaN HEMT from 2.14 GHz
Application Industry:
Cellular, Wireless Infrastructure, Wireless Commun...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
Frequency:
2.14 GHz
Power:
42 dBm
Package Type:
Flanged
Power(W):
15.85 W
Supply Voltage:
50 V
more info
Description:9 W, GaN HEMT Transistor from 2.11 to 2.17 GHz
Application Industry:
Test & Measurement, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
2.11 to 2.17 GHz
Power:
39.5 dBm
Package Type:
Flanged
Power(W):
9 W
Supply Voltage:
48 V
Package:
680B
more info
Description:80 W, LDMOS RF Transistor from DC to 945 MHz
Application Industry:
Avionics, Commercial, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
DC to 945 MHz
Power:
49.03 dBm
Package Type:
Flanged
Power(W):
80 W
Supply Voltage:
28 V
more info

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