RF Transistors - Page 84

2357 RF Transistors from 26 Manufacturers meet your specification.
Description:GaN Power Transistor
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
2.496 to 2.69 GHz
Power:
49.29 dBm
Package Type:
Flanged
Power(W):
84.92 W
Gain:
20.2 dB
Supply Voltage:
48 V
Package:
NS-AS01
more info
Description:DC to 1.7 GHz, HEMT Transistor
Application Industry:
Radar, Aerospace & Defence, Test & Measurement, Av...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
DC to 1.7 GHz
Power:
56.99 dBm
Package Type:
Surface Mount
Power(W):
500.03 W
Gain:
23.9 dB
Supply Voltage:
32 to 55 V
more info
Description:Si Based DMOS Transistor
Application Industry:
Aerospace & Defence, Radar, ISM, Avionics
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
CW
Frequency:
100 to 500 MHz
Power:
36.99 dBm
Package Type:
Flanged
Power(W):
5 W
Gain:
10 dB
Supply Voltage:
28 V
Package:
Flange Ceramic
more info
Description:56.99 dBm (500 W), LDMOS Transistor from 1400 to 1500 MHz
Application Industry:
Broadcast, ISM, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
1.4 to 1.5 GHz
Power:
56.98 dBm
Package Type:
Surface Mount
Power(W):
498.88 W
Supply Voltage:
50 V
Package:
SOT539A
more info
MMRF1314H Image
Description:RF POWER LDMOS TRANSISTOR 1200-1400 MHz, 1000 W Peak, 52 V
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Rada...
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.2 to 1.4 GHz
Power:
60 dBm
Package Type:
Flanged
Power(W):
1000 W
Supply Voltage:
52 V
Package:
NI--1230H--4S
more info
IE18385D Image
Description:GaN Power Transistor
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
1.805 to 1.88 GHz
Power:
55.85 dBm
Package Type:
Flanged
Power(W):
384.59 W
Gain:
15.1 dB
Supply Voltage:
48 V
Package:
RF24001DKR3
more info
Description:2.856 GHz, HEMT Transistor
Application Industry:
ISM
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
2.856 GHz
Power:
56.99 dBm
Package Type:
Flanged
Power(W):
500.03 W
Gain:
11.8 dB
Supply Voltage:
50 V
Package:
Ceramic
more info
Description:GaAs FET from 13.75 to 14.5 GHz
Application Industry:
Communication, Wireless Infrastructure
Transistor Type:
FET
Technology:
GaAs
Frequency:
13.75 to 14.5 GHz
Power:
40.5 to 41 dBm
Package Type:
Flanged
Power(W):
11.22 to 12.59 W
more info
Description:60 W, GaN HEMT Transistor from 1.38 to 1.48 GHz
Application Industry:
Test & Measurement, Radar, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
1.38 to 1.48 GHz
Power:
47.8 dBm
Package Type:
Flanged
Power(W):
60.26 W
Gain:
18.5 dB
Supply Voltage:
28 V
Package:
680B
more info
Description:500 W, LDMOS RF Transistor from 1.03 to 1.09 GHz
Application Industry:
Avionics, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
1.03 to 1.09 GHz
Power:
56.99 dBm
Power(W):
500 W
Supply Voltage:
50 V
more info
Description:25 W, Si LDMOS Power Transistor
Application Industry:
Aerospace & Defence, Broadcast, Wireless Infrastru...
Transistor Type:
LDMOS
Technology:
Si
Frequency:
1 to 500 MHz
Power:
43 dBm
Package Type:
Flanged
Power(W):
25 W
more info

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