RF Transistors - Page 84

2360 RF Transistors from 26 Manufacturers meet your specification.
Description:100 W GaN-on-SiC Transistor from 2400 to 2500 MHz
Application Industry:
Test & Measurement, ISM
Technology:
GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
2.4 to 2.5 GHz
Power:
50.4 to 51 dBm
Package Type:
Flanged
Power(W):
110 to 127 W
Supply Voltage:
52 V
Package:
NS-AS01
more info
Description:DC to 18 GHz, HEMT Transistor
Application Industry:
Aerospace & Defence, Wireless Infrastructure, Wire...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
DC to 18 GHz
Power:
38 dBm
Package Type:
Die
Power(W):
6.31 W
Gain:
18 dB
Supply Voltage:
12 to 40 V
more info
Description:270 W GaN on SiC HEMT from 2620 to 2690 MHz
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
2.62 to 2.69 GHz
Power:
54.31 dBm
Package Type:
Earless Flanged
Power(W):
270 W
Gain:
16.5 to 18.1 dB
Supply Voltage:
48 V
more info
Description:48.45 dBm (70 W), LDMOS Transistor from 10 to 1300 MHz
Application Industry:
Broadcast, ISM, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
10 MHz to 1.3 GHz
Power:
44.77 to 50 dBm
Package Type:
Surface Mount
Power(W):
100 W
Supply Voltage:
32 V
Package:
SOT1228A
more info
MRF8S7235N Image
Description:Single W-CDMA Lateral N-Channel RF Power MOSFET, 728-768 MHz, 63 W Avg., 28 V
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
728 to 768 MHz
Power:
47.99 dBm
Package Type:
Flanged
Power(W):
62.95 W
Supply Voltage:
28 V
Package:
OM--780--2 PLASTIC
more info
Description:GaN Power Transistor
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
DC to 6 GHz
Power:
44.47 dBm
Package Type:
Flanged
Power(W):
27.99 W
Gain:
17.6 dB
Supply Voltage:
48 V
Package:
NS-CS01
more info
Description:2.7 to 3.1 GHz, HEMT Transistor
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
2.7 to 3.1 GHz
Power:
36.99 dBm
Package Type:
Flanged
Power(W):
5 W
Gain:
15 dB
Supply Voltage:
50 V
Package:
Ceramic
more info
Description:GaAs FET from 14.5 GHz
Transistor Type:
FET
Technology:
GaAs
Frequency:
14.5 GHz
Power:
26 to 27 dBm
Package Type:
Chip
Power(W):
0.4 to 0.5 W
more info
Description:60 W, GaN HEMT Transistor from DC to 15 GHz
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
DC to 15 GHz
Power:
47.78 dBm
Package Type:
Die
Power(W):
59.98 W
Supply Voltage:
28 V
more info
RF3L05200CB4 Image
Description:200 W, LDMOS RF Transistor operating at 1000 MHz
Application Industry:
Avionics, Commercial, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
1000 MHz
Power:
53.01 dBm
Package Type:
Flanged
Power(W):
200 W
Supply Voltage:
28 V / 32 V
more info
Description:35 W, Si LDMOS Power Transistor
Application Industry:
Aerospace & Defence, Broadcast, Wireless Infrastru...
Transistor Type:
LDMOS
Technology:
Si
Frequency:
1 to 500 MHz
Power:
45 dBm
Package Type:
Flanged
Power(W):
35 W
more info

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