RF Transistors - Page 87

2360 RF Transistors from 26 Manufacturers meet your specification.
PD84006L-E Image
Description:6 W, LDMOS RF Transistor from 740 to 950 MHz
Application Industry:
Broadcast, Commercial, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
740 to 950 MHz
Power:
37.78 dBm
Power(W):
5 to 6 W
Supply Voltage:
7.5 to 9.5 V
more info
Description:12 W, Si LDMOS Power Transistor
Application Industry:
Aerospace & Defence, Broadcast, Wireless Infrastru...
Transistor Type:
LDMOS
Technology:
Si
Frequency:
1 to 1500 MHz
Power:
40 dBm
Package Type:
Flanged
Power(W):
12 W
more info
Description:300 W, GaN on SiC Transistor from 960 to 1215 MHz
Application Industry:
Avionics
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse
Frequency:
960 to 1215 MHz
Power:
54.77 dBm
Package Type:
Ceramic
Power(W):
300 W
Supply Voltage:
50 V
more info
Description:43 dBm GaN RF Transistors for X-Band Radar Application
Application Industry:
Aerospace & Defence, Avionics, Commercial, Wireles...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
DC to 12 GHz
Power:
43.01 dBm
Package Type:
Surface Mount
Power(W):
20 W
Gain:
11 dB
Supply Voltage:
32 V
Package:
4 x 3 mm
more info
Description:800 W GaN Transistor from 1.2 to 1.4 GHz
Application Industry:
Radar, Avionics
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse
Frequency:
0.9 to 1.4 GHz
Power:
59 dBm
Package Type:
Flanged
Power(W):
794 W
Gain:
15 dB
Supply Voltage:
50 V
more info
Description:43.98 dBm (25 W), LDMOS Transistor from 500 to 1400 MHz
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
500 MHz to 1.4 GHz
Power:
43.98 dBm
Package Type:
Surface Mount
Power(W):
25 W
Supply Voltage:
50 V
Package:
SOT467C
more info
A3G18H500-04S Image
Description:1805 to 1880 MHz, 107 W AVG., 48 V, AIRFAST RF Power GaN Transistor
Application Industry:
Wireless Infrastructure
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
1.805 to 1.88 GHz
Power:
50.29 dBm
Package Type:
Flanged
Power(W):
107 W
Supply Voltage:
48 Vdc
more info
Description:550 W GaN Power Transistor from 1295 to 1305 MHz
Application Industry:
ISM, RF Energy
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
1295 to 1305 MHz
Power:
57.4 dBm
Package Type:
Flanged
Power(W):
550 W
Supply Voltage:
50 V
more info
Description:2.7 to 3.1 GHz, HEMT Transistor
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
2.7 to 3.1 GHz
Power:
51.14 to 51.3 dBm
Package Type:
Flanged
Power(W):
134.9 W
Gain:
14.8 dB
Supply Voltage:
50 V
Package:
Ceramic
more info
Description:GaAs FET from 10.7 to 11.7 GHz
Application Industry:
Communication, Wireless Infrastructure
Transistor Type:
FET
Technology:
GaAs
Frequency:
10.7 to 11.7 GHz
Power:
42 to 43 dBm
Package Type:
Flanged
Power(W):
15.85 to 19.95 W
Supply Voltage:
10 V
more info

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