RF Transistors - Page 82

2360 RF Transistors from 26 Manufacturers meet your specification.
Description:300 Watt GaN Power Transistor from 910 to 920 MHz
Application Industry:
ISM
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
910 to 920 MHz
Power:
55.9 dBm
Package Type:
Surface Mount
Power(W):
330 W
Gain:
17.1 to 18 dB
Supply Voltage:
50 V
more info
Description:Si Based Bipolar Transistor
Application Industry:
Aerospace & Defence, ISM
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
CW
Frequency:
960 MHz to 1.215 GHz
Power:
44.77 dBm
Package Type:
Flanged
Power(W):
29.99 W
Gain:
9 to 9.5 dB
Supply Voltage:
36 V
Package:
Flange Ceramic
more info
Description:51.46 dBm (140 W), LDMOS Transistor from 1 to 1000 MHz
Application Industry:
Broadcast, ISM, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
1 MHz to 1 GHz
Power:
51.46 dBm
Package Type:
Surface Mount
Power(W):
139.96 W
Supply Voltage:
50 V
Package:
SOT467C
more info
MRF8S9260HR3 Image
Description:Single W-CDMA Lateral N-Channel RF Power MOSFET, 920-960 MHz, 75 W Avg., 28 V
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
920 to 960 MHz
Power:
48.75 dBm
Package Type:
Flanged
Power(W):
74.99 W
Supply Voltage:
28 V
Package:
CASE 465B--04 NI--880
more info
Description:2200 to 2260 MHz, 8.5 dB Bipolar Transistor
Application Industry:
Radar
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
2.25 to 2.55 GHz
Power:
52.04 dBm
Package Type:
Flanged
Power(W):
159.96 W
Gain:
8.5 dB
Supply Voltage:
38 V
Package:
Ceramic
more info
Description:GaN on SiC, GaN HEMT from 1.9 GHz
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
Frequency:
1.9 GHz
Power:
50 dBm
Package Type:
Flanged
Power(W):
100 W
Supply Voltage:
50 V
more info
Description:107 W, GaN HEMT Transistor from 3.5 to 3.6 GHz
Application Industry:
Wireless Infrastructure, Test & Measurement, Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
3.5 to 3.6 GHz
Power:
50.3 dBm
Package Type:
Flanged
Power(W):
107 W
Supply Voltage:
48 V
Package:
680B
more info
PD85025-E Image
Description:30 W, LDMOS / MOSFET RF Transistor operating at 870 MHz
Application Industry:
Broadcast, Commercial, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
870 MHz
Power:
44.77 dBm
Package Type:
Surface Mount
Power(W):
25 to 30 W
Supply Voltage:
13.6 V
more info
Description:100 W, Si LDMOS Power Transistor
Application Industry:
Aerospace & Defence, Broadcast, Wireless Infrastru...
Transistor Type:
LDMOS
Technology:
Si
Frequency:
1 to 500 MHz
Power:
50 dBm
Package Type:
Flanged
Power(W):
100 W
more info
Description:Class-AB GaN-on-SiC HEMT Transistor
Application Industry:
Aerospace & Defence, Wireless Infrastructure, Avio...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
1.4 to 1.6 GHz
Power:
57.78 to 57.78 dBm
Package Type:
Die
Power(W):
599.79 W
Supply Voltage:
50 V
Package:
55-KR
more info
Description:15 Watt, 0.03 to 1.2 GHz, GaN RF Input-Matched Transistor
Application Industry:
Wireless Infrastructure, Radar, Test & Measurement...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
30 MHz to 1.2 GHz
Power:
41.76 dBm
Package Type:
Surface Mount
Power(W):
15 W
Gain:
18.4 dB
Supply Voltage:
12 to 55 V
Package:
6 x 5 mm
more info

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