RF Transistors - Page 82

2357 RF Transistors from 26 Manufacturers meet your specification.
Description:GaN Power Transistor
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
2.62 to 2.69 GHz
Power:
55.19 dBm
Package Type:
Flanged
Power(W):
330.37 W
Gain:
14.2 dB
Supply Voltage:
48 V
Package:
RF24001DKR3
more info
Description:Si Based Bipolar Transistor
Application Industry:
Aerospace & Defence, ISM
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
960 MHz to 1.215 GHz
Power:
50.79 dBm
Package Type:
Flanged
Power(W):
119.95 W
Gain:
7.6 to 8.5 dB
Supply Voltage:
36 V
Package:
Flange Ceramic
more info
Description:2-Stage Asymmetrical Doherty LDMOS FET from 2.3 to 2.7 GHz
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW, Pulse
Frequency:
2300 to 2700 MHz
Power:
47.4 dBm (P3dB)
Package Type:
Surface Mount
Power(W):
55 W (P3dB)
Supply Voltage:
28 V
Package:
PQFN
more info
MRFE6S9160HR3 Image
Description:Single N-CDMA Lateral N-Channel RF Power MOSFET, 880 MHz, 35 W Avg., 28 V
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
865 to 960 MHz
Power:
45.44 dBm
Package Type:
Flanged
Power(W):
34.99 W
Supply Voltage:
28 V
Package:
CASE 465-06, STYLE 1 NI-780
more info
Description:960 MHz to 1.22 GHz, HEMT Transistor
Application Industry:
Aerospace & Defence, Avionics
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
960 MHz to 1.22 GHz
Power:
53.98 dBm
Package Type:
Flanged
Power(W):
250.03 W
Gain:
15 dB
Supply Voltage:
50 V
Package:
Ceramic
more info
Description:GaN on SiC, GaN HEMT from 2.6 GHz
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
Frequency:
2.6 GHz
Power:
42 dBm
Package Type:
Flanged
Power(W):
15.85 W
Supply Voltage:
50 V
more info
Description:33 W, GaN HEMT Transistor from DC to 10 GHz
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
DC to 10 GHz
Power:
45.19 dBm
Package Type:
Die
Power(W):
33.04 W
Supply Voltage:
48 V
more info
Description:350 W, LDMOS RF Transistor from 1.2 to 1.4 GHz
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW, Pulse
Frequency:
1.2 to 1.4 GHz
Power:
55.441 dBm
Package Type:
Flanged
Power(W):
350 W
Supply Voltage:
50 V
more info
Description:4 W, Si VDMOS Power Transistor
Application Industry:
Aerospace & Defence, Broadcast, Wireless Infrastru...
Transistor Type:
VDMOS
Technology:
GaN on SiC, GaN
Frequency:
1 to 1000 MHz
Power:
36 dBm
Package Type:
Surface Mount
Power(W):
4 W
more info
Description:0.5 Watt, 20 Volts, Class A UHF Television - Band IV & V
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Broa...
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
CW
Frequency:
470 to 860 MHz
Power:
26.9 dBm
Package Type:
Screw Mount, Flanged
Power(W):
0.49 W
Supply Voltage:
20 V
Package:
55FT-2
more info
Description:1500 W GaN RF Transistor from 1.2 to 1.4 GHz
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
1.2 to 1.4 GHz
Power:
61.76 dBm (3dB Compression)
Package Type:
Ceramic
Power(W):
1500 (3dB Compression) W
Gain:
23.3 dB
Supply Voltage:
65 V
more info

FiltersReset All

Application Industry

Transistor Type

Technology

CW/Pulse

Frequency

 
 
Apply

Power (dBm)

Apply

Power(W)

Apply

Gain (dB)

Apply

Supply Voltage (V)

Apply

Package Type